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US5224218A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Microwave device
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1991-04-18
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Granted: 1993-06-29
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Expires: 2011-04-18
Abstract
Abstract There is disclosed a microwave device including a substrate made of a dielectric material, and a frequency conversion circuit formed on a front surface there of the circuit, has a microstrip line and a radio frequency amplifier. The substrate is partially thinned at a portion of its back surface which faces the radio frequency amplifier.
Inventors
- 👤 Nobuo Shiga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:15
CPC Classifications
H; H01; H01P; H01P3/00; H01P3/02; H01P3/08; H01P3/081
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
133 words
A microwave device comprising: a substrate made of a dielectric material and having a thickness from approximately 150 micro-meters to approximately 400 micro-meters, said substrate having a through hole passing therethrough; a conductive layer formed on an entire back surface of said substrate; and a frequency conversion circuit formed on a front surface of said substrate, said frequency conversion circuit including a radio frequency amplifier and a microstrip line formed on said front surface of said substrate, a part of said frequency conversion circuit being electrically connected to said metal film through said through hole; said substrate being partially thinned at a predetermined portion of said back surface, the thickness of said substrate at said thinned portion being approximately 100 micro-meters, said through hole being formed through said predetermined portion of said substrate.
Claim 2
Dependent Claim
133 words
A microwave device comprising: a substrate made of a dielectric material and having a thickness from approximately 150 micro-meters to approximately 400 micro-meters, said substrate having a through hole passing therethrough; a conductive layer formed on an entire back surface of said substrate; and a frequency conversion circuit formed on a front surface of said substrate, said frequency conversion circuit including a radio frequency amplifier and a microstrip line formed on said front surface of said substrate, a part of said frequency conversion circuit being electrically connected to said metal film through said through hole; said substrate being partially thinned at a predetermined portion of said back surface, the thickness of said substrate at said thinned portion being approximately 100 micro-meters, said through hole being formed through said predetermined portion of said substrate.
Claim 3
Dependent Claim
38 words
A microwave device according to claim 1, wherein said radio frequency amplifier is a field effect transistor, and wherein a source terminal of said field effect transistor is electrically connected to said conductive layer through said through hole.
Claim 4
Dependent Claim
33 words
A microwave device according to claim 2, wherein a plurality of said field effect transistors are formed on said front surface of said substrate, and said plurality of transistors provide a multi-stage amplifier.
Claim 5
Dependent Claim
138 words
A microwave device comprising: a substrate made of a dielectric material and having a thickness of from approximately 150 micro-meters to approximately 400 micro-meters; a frequency conversion circuit formed on a front surface of said substrate, said frequency conversion circuit including a radio frequency amplifier and a microstrip line formed on said front surface of said substrate; and a conductive layer formed on an entire back surface of said substrate, said substrate being partially thinned at a predetermined portion of said back surface, the thickness of said substrate at said thinned portion being approximately 100 micro-meters, said radio frequency amplifier being formed at a predetermined position on said front surface of said substrate, said predetermined position on said front surface being in opposition to said partially thinned portion on said back surface of said substrate, through said substrate.
Claim 6
Dependent Claim
138 words
A microwave device comprising: a substrate made of a dielectric material and having a thickness of from approximately 150 micro-meters to approximately 400 micro-meters; a frequency conversion circuit formed on a front surface of said substrate, said frequency conversion circuit including a radio frequency amplifier and a microstrip line formed on said front surface of said substrate; and a conductive layer formed on an entire back surface of said substrate, said substrate being partially thinned at a predetermined portion of said back surface, the thickness of said substrate at said thinned portion being approximately 100 micro-meters, said radio frequency amplifier being formed at a predetermined position on said front surface of said substrate, said predetermined position on said front surface being in opposition to said partially thinned portion on said back surface of said substrate, through said substrate.
Claim 7
Dependent Claim
136 words
A microwave device comprising: a substrate made of a dielectric material and having a thickness from approximately 150 micro-meters to approximately 400 micro-meters, a conductive layer formed on an entire back surface of said substrate; and a frequency conversion circuit formed on a front surface of said substrate, said frequency conversion circuit including a radio frequency amplifier and a microstrip line formed on said front surface of said substrate; said substrate being partially thinned at a predetermined portion of said back surface, the thickness of said substrate at said thinned portion being approximately 100 micro-meters, said microstrip line being formed at a predetermined position on said front surface of said substrate, said predetermined position on said front surface being in opposition to said partially thinned portion on said back surface of said substrate, through said substrate.
Claim 8
Dependent Claim
136 words
A microwave device comprising: a substrate made of a dielectric material and having a thickness from approximately 150 micro-meters to approximately 400 micro-meters, a conductive layer formed on an entire back surface of said substrate; and a frequency conversion circuit formed on a front surface of said substrate, said frequency conversion circuit including a radio frequency amplifier and a microstrip line formed on said front surface of said substrate; said substrate being partially thinned at a predetermined portion of said back surface, the thickness of said substrate at said thinned portion being approximately 100 micro-meters, said microstrip line being formed at a predetermined position on said front surface of said substrate, said predetermined position on said front surface being in opposition to said partially thinned portion on said back surface of said substrate, through said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-28 | 1996-12-28 | 1997-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-28 | 2000-12-28 | 2001-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-28 | 2004-12-28 | 2005-06-29 | $7700.00 | Window Closed / Lapsed |