Patent US5223729A successfully refreshed from Google Patents.
US5223729A
Expired / Lapsed
US
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Semiconductor device and a method of producing the same
Assignee: Panasonic Holdings Corp
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Filing: 1991-09-24
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Granted: 1993-06-29
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Expires: 2011-09-24
Abstract
Abstract A semiconductor device in which a shortage node of a storage capacitor in a memory cell has rounded edges in cross section and a method of producing the same. A breakdown of a dielectric film in the vicinity of the rounded edges of the storage node is prevented, because electric field concentrations in the vicinity of edges of a storage node is relaxed by rounded shapes of the storage node.
Inventors
- 👤 Chiaki Kudoh
- 👤 Akito Uno
- 👤 Mikio Nishio
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:18
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D; H10D1/00; H10D1/01; H10D1/041; H10D1/042; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/714
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
121 words
A semiconductor device comprising a semiconductor substrate having a top surface, and a plurality of memory cells formed on said top surface of said semiconductor substrate, each of said plurality of memory cells including a storage capacitor formed over said top surface of said semiconductor substrate; said storage capacitor comprising a first electrode having rounded edges in a cross section which is perpendicular to said top surface of said semiconductor substrate; a dielectric film formed on said first electrode, said dielectric film covering said rounded edges; and a second electrode formed on said dielectric film, said first electrode comprising an inner conductive portion; and a conductive film covering sad inner conductive portion, said rounded edges being made of said conductive film.
Claim 2
Dependent Claim
121 words
A semiconductor device comprising a semiconductor substrate having a top surface, and a plurality of memory cells formed on said top surface of said semiconductor substrate, each of said plurality of memory cells including a storage capacitor formed over said top surface of said semiconductor substrate; said storage capacitor comprising a first electrode having rounded edges in a cross section which is perpendicular to said top surface of said semiconductor substrate; a dielectric film formed on said first electrode, said dielectric film covering said rounded edges; and a second electrode formed on said dielectric film, said first electrode comprising an inner conductive portion; and a conductive film covering sad inner conductive portion, said rounded edges being made of said conductive film.
Claim 3
Dependent Claim
27 words
A semiconductor device according to claim 1, wherein the radius of curvature of said rounded edges is four or more times the thickness of said dielectric film.
Claim 4
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein said conductive film of said first electrode is a film deposited on said inner conductive portion by a chemical vapor deposition method.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said conductive film is a doped polycrystalline silicon film.
Claim 6
Dependent Claim
131 words
A semiconductor device comprising a semiconductor substrate having a top surface, and a plurality of memory cells formed on said top surface of said semiconductor substrate, each of said plurality of memory cells including a storage capacitor formed over said top surface of said semiconductor substrate; said storage capacitor comprising a first electrode having rounded edges in a cross section which is perpendicular to said top surface of said semiconductor substrate; a dielectric film formed on said first electrode, said dielectric film covering said rounded edges; and a second electrode formed on said dielectric film, said first electrode comprising a first conductive portion having side faces substantially perpendicular to said top surface of said semiconductor substrate; and a second conductive portion formed on said side faces of said first conductive portion.
Claim 7
Dependent Claim
131 words
A semiconductor device comprising a semiconductor substrate having a top surface, and a plurality of memory cells formed on said top surface of said semiconductor substrate, each of said plurality of memory cells including a storage capacitor formed over said top surface of said semiconductor substrate; said storage capacitor comprising a first electrode having rounded edges in a cross section which is perpendicular to said top surface of said semiconductor substrate; a dielectric film formed on said first electrode, said dielectric film covering said rounded edges; and a second electrode formed on said dielectric film, said first electrode comprising a first conductive portion having side faces substantially perpendicular to said top surface of said semiconductor substrate; and a second conductive portion formed on said side faces of said first conductive portion.
Claim 8
Dependent Claim
27 words
A semiconductor device according to claim 5, wherein the radius of curvature of said rounded edges is four or more times the thickness of said dielectric film.
Claim 9
Dependent Claim
29 words
A semiconductor device according to claim 5, wherein said second conductive portion is deposited on said side faces of said first conductive portion by a chemical vapor deposition method.
Claim 10
Dependent Claim
17 words
A semiconductor device according to claim 5, wherein said conductive portion is a doped polycrystalline silicon film.
Claim 11
Independent Claim
195 words
A method of fabricating a semiconductor device comprising a semiconductor substrate having a top surface, and a plurality of memory cells formed on said top surface of said semiconductor substrate, each of said plurality of memory cells including a storage capacitor formed over said top surface of said semiconductor substrate, said method comprising the steps of: forming a first electrode having rounded edges in a cross section which is perpendicular to said top surface of said semiconductor substrate; forming a dielectric film on said first electrode, for covering said rounded edges; and forming a second electrode on said dielectric film, thereby forming said storage capacitor which comprises said first electrode, said dielectric film, and said second electrode, said step of forming said first electrode comprising the steps of forming a multilayer structure over said top of said semiconductor substrate, said multilayer structure including at least one insulating film and conductive films sandwiching said insulating film; patterning said multilayer structure by a selective etching technique; removing said insulating film by an etching technique, for forming an electrode; and etching edges of said electrode by an etching technique, thereby forming said first electrode having said rounded edges.
Claim 12
Independent Claim
195 words
A method of fabricating a semiconductor device comprising a semiconductor substrate having a top surface, and a plurality of memory cells formed on said top surface of said semiconductor substrate, each of said plurality of memory cells including a storage capacitor formed over said top surface of said semiconductor substrate, said method comprising the steps of: forming a first electrode having rounded edges in a cross section which is perpendicular to said top surface of said semiconductor substrate; forming a dielectric film on said first electrode, for covering said rounded edges; and forming a second electrode on said dielectric film, thereby forming said storage capacitor which comprises said first electrode, said dielectric film, and said second electrode, said step of forming said first electrode comprising the steps of forming a multilayer structure over said top of said semiconductor substrate, said multilayer structure including at least one insulating film and conductive films sandwiching said insulating film; patterning said multilayer structure by a selective etching technique; removing said insulating film by an etching technique, for forming an electrode; and etching edges of said electrode by an etching technique, thereby forming said first electrode having said rounded edges.
Claim 13
Independent Claim
206 words
A method of fabricating a semiconductor device comprising a semiconductor substrate having a top surface, and a plurality of memory cells formed on said top surface of said semiconductor substrate, each of said plurality of memory cells including a storage capacitor formed over said top surface of said semiconductor substrate, said method comprising the steps of: forming a first electrode having rounded edges in a cross section which is perpendicular to said top surface of said semiconductor substrate; forming a dielectric film on said first electrode, for covering said rounded edges; and forming a second electrode on said dielectric film, thereby forming said storage capacitor which comprises said first electrode, said dielectric film, and said second electrode said step of forming said first electrode comprising the steps of forming a multilayer structure over said top of said semiconductor substrate, said multilayer structure including at least one insulating film and conductive films sandwiching said insulating film; patterning said multilayer structure by a selective etching technique; removing said insulating film by an etching technique, for forming an inner conductive portion of said first electrode; and forming a conductive film on said inner conductive portion, for covering said inner conductive portion, thereby forming said electrode having said rounded edges.
Claim 14
Independent Claim
206 words
A method of fabricating a semiconductor device comprising a semiconductor substrate having a top surface, and a plurality of memory cells formed on said top surface of said semiconductor substrate, each of said plurality of memory cells including a storage capacitor formed over said top surface of said semiconductor substrate, said method comprising the steps of: forming a first electrode having rounded edges in a cross section which is perpendicular to said top surface of said semiconductor substrate; forming a dielectric film on said first electrode, for covering said rounded edges; and forming a second electrode on said dielectric film, thereby forming said storage capacitor which comprises said first electrode, said dielectric film, and said second electrode said step of forming said first electrode comprising the steps of forming a multilayer structure over said top of said semiconductor substrate, said multilayer structure including at least one insulating film and conductive films sandwiching said insulating film; patterning said multilayer structure by a selective etching technique; removing said insulating film by an etching technique, for forming an inner conductive portion of said first electrode; and forming a conductive film on said inner conductive portion, for covering said inner conductive portion, thereby forming said electrode having said rounded edges.
References Cited (Backward Citations)
US5100822A
Cited
US5095346A
Cited
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