Patent US5223443A successfully refreshed from Google Patents.
US5223443A
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Method for determining wafer cleanliness
Assignee: Renesas Electronics America Inc
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Filing: 1992-02-19
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Granted: 1993-06-29
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Expires: 2012-02-19
Abstract
Abstract An embodiment of the present invention is a method for determining the cleanliness of a semiconductor wafer initially deposited with polysilicon, patterned with photoresist, processed, and then having the resist removed under standard conditions. The method comprising the steps of: depositing a thin TEOS film over the entire surface of a wafer; exposing said wafer to a solution of hot potassium hydroxide (KOH) that attacks polysilicon and is highly selective to and does not etch said TEOS film, the exposing such that if any pin hole exists in the TEOS film an underlying layer of polysilicon is attacked vigorously; and inspecting said wafer for a visual indication in said polysilicon layer of whether or not said polysilicon layer was attacked by the exposure to said potassium hydroxide (KOH).
Inventors
- 👤 Jeffrey D. Chinn
- 👤 Ciaran P. Hanrahan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:28
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/15
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
104 words
A method for determining the cleanliness of a semiconductor wafer, the method comprising the steps of: depositing a thin conformal film over an entire surface of a wafer comprising an underlying polysilicon layer; exposing said wafer to an agent that selectively attacks polysilicon material and that does not substantially etch said conformal film wherein any aberrations of said conformal film that exist on said underlying polysilicon layer open said underlying polysilicon layer to attack by said selective agent; and inspecting said wafer for a visual indication in said polysilicon layer of whether said polysilicon layer had been attacked by such exposure to said agent.
Claim 2
Independent Claim
104 words
A method for determining the cleanliness of a semiconductor wafer, the method comprising the steps of: depositing a thin conformal film over an entire surface of a wafer comprising an underlying polysilicon layer; exposing said wafer to an agent that selectively attacks polysilicon material and that does not substantially etch said conformal film wherein any aberrations of said conformal film that exist on said underlying polysilicon layer open said underlying polysilicon layer to attack by said selective agent; and inspecting said wafer for a visual indication in said polysilicon layer of whether said polysilicon layer had been attacked by such exposure to said agent.
Claim 3
Dependent Claim
16 words
The method of claim 1, wherein: the depositing comprises using a conformal film of tetraethyl-orthosilicate (TEOS).
Claim 4
Dependent Claim
19 words
The method of claim 1, wherein: the exposing of said wafer comprises using an agent having potassium hydroxide (KOH).
Claim 5
Dependent Claim
25 words
The method of claim 1, wherein: the exposing step comprises exposing said wafer in which a photoresist residue causes said aberration of said conformal film.
Claim 6
Independent Claim
119 words
A method for determining the cleanliness of a semiconductor wafer initially deposited with polysilicon, patterned with photoresist, processed, and then having had the resist removed, the method comprising the steps of: depositing a thin TEOS film over the entire surface of a wafer; exposing said wafer to a solution of hot potassium hydroxide (KOH) that attacks polysilicon and is highly selective to and does not etch said TEOS film, the exposing such that if any pin hole exists in the TEOS film an underlying layer of polysilicon is attacked vigorously; and inspecting said wafer for a visual indication in said polysilicon layer of whether or not said polysilicon layer was attacked by the exposure to said potassium hydroxide (KOH).
Claim 7
Independent Claim
119 words
A method for determining the cleanliness of a semiconductor wafer initially deposited with polysilicon, patterned with photoresist, processed, and then having had the resist removed, the method comprising the steps of: depositing a thin TEOS film over the entire surface of a wafer; exposing said wafer to a solution of hot potassium hydroxide (KOH) that attacks polysilicon and is highly selective to and does not etch said TEOS film, the exposing such that if any pin hole exists in the TEOS film an underlying layer of polysilicon is attacked vigorously; and inspecting said wafer for a visual indication in said polysilicon layer of whether or not said polysilicon layer was attacked by the exposure to said potassium hydroxide (KOH).
Claim 8
Independent Claim
99 words
A method for visually enhancing evidence of residues on a semiconductor wafer, the method comprising the steps of: covering a semiconductor wafer with a conformal film comprising polysilicon that is resistant to an etching agent comprising HF vapor that will attack the material of an underlying layer comprising silicon dioxide; and immersing said semiconductor wafer in said etching agent for a period of time sufficient for visibly large voids to be formed in said underlying layer if any etching agent was able to breach said conformal film as a consequence of said semiconductor wafer having residues on its surface.
Claim 9
Independent Claim
99 words
A method for visually enhancing evidence of residues on a semiconductor wafer, the method comprising the steps of: covering a semiconductor wafer with a conformal film comprising polysilicon that is resistant to an etching agent comprising HF vapor that will attack the material of an underlying layer comprising silicon dioxide; and immersing said semiconductor wafer in said etching agent for a period of time sufficient for visibly large voids to be formed in said underlying layer if any etching agent was able to breach said conformal film as a consequence of said semiconductor wafer having residues on its surface.
Claim 10
Independent Claim
101 words
A method for visually enhancing evidence of residues on a semiconductor wafer, the method comprising the steps of: covering a semiconductor wafer with a conformal film comprising tetraethyl-orthosilicate (TEOS) that is resistant to an etching agent which comprises potassium hydroxide (KOH) that will attack the material of an underlying layer comprising silicon; and immersing said semiconductor wafer in said etching agent for a period of time sufficient for visibly large voids to be formed in said underlying layer if any etching agent was able to breach said conformal film as a consequence of said semiconductor wafer having residues on its surface.
Claim 11
Independent Claim
101 words
A method for visually enhancing evidence of residues on a semiconductor wafer, the method comprising the steps of: covering a semiconductor wafer with a conformal film comprising tetraethyl-orthosilicate (TEOS) that is resistant to an etching agent which comprises potassium hydroxide (KOH) that will attack the material of an underlying layer comprising silicon; and immersing said semiconductor wafer in said etching agent for a period of time sufficient for visibly large voids to be formed in said underlying layer if any etching agent was able to breach said conformal film as a consequence of said semiconductor wafer having residues on its surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-06-28 | 1996-12-28 | 1997-06-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-28 | 2000-12-28 | 2001-06-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-28 | 2004-12-28 | 2005-06-29 | $7700.00 | Window Closed / Lapsed |