US5221633A — Method of manufacturing a distributed drive optoe…

Claim 1

Independent Claim 143 words

A method of integrating an optical emitter and a drive circuit in a semiconductor material to form a distributed drive vertically integrated optoelectronic integrated circuit capable of being mated with an optical fiber which comprises: providing a double heterostructure optical emitter having an active layer; providing a first confinement layer on the active layer; fabricating a drive circuit on the first confinement layer, the drive circuit comprising a first portion and a second portion wherein the first portion comprises a plurality of optically nonabsorbing drive devices having a vertically oriented region and the second portion comprises a peripheral drive network; defining a plurality of emission loci within an optical emission area of the double heterostructure optical emitter providing the first portion with a bandgap larger than the bandgap of the double heterostructure optical emitter wherein the first portion is nonabsorbing to optical emissions.

Claim 2

Independent Claim 143 words

A method of integrating an optical emitter and a drive circuit in a semiconductor material to form a distributed drive vertically integrated optoelectronic integrated circuit capable of being mated with an optical fiber which comprises: providing a double heterostructure optical emitter having an active layer; providing a first confinement layer on the active layer; fabricating a drive circuit on the first confinement layer, the drive circuit comprising a first portion and a second portion wherein the first portion comprises a plurality of optically nonabsorbing drive devices having a vertically oriented region and the second portion comprises a peripheral drive network; defining a plurality of emission loci within an optical emission area of the double heterostructure optical emitter providing the first portion with a bandgap larger than the bandgap of the double heterostructure optical emitter wherein the first portion is nonabsorbing to optical emissions.

Claim 3

Dependent Claim 49 words

The method for integrating the optical emitter and drive circuit of claim 1 further including fabricating the first portion of the drive circuit as at least one field effect transistor, wherein the at least one field effect transistor comprises a gate region, a source region, and a drain region.

Claim 4

Dependent Claim 39 words

The method for integrating the optical emitter and drive circuit of claim 1 wherein the step of defining a plurality of emission loci includes providing at least one vertical channel which cooperates with a portion of a buried layer.

Claim 5

Dependent Claim 38 words

The method for integrating the optical emitter and drive circuit of claim 3 further including fabricating the gate and source regions over the buried layer wherein the buried layer serves to confine current injection into the emission loci.

Claim 6

Dependent Claim 36 words

The method for integrating the optical emitter and drive circuit of claim 1 further including fabricating the first portion of the drive circuit as a heterojunction bipolar transistor having a plurality of base and emitter fingers.

Claim 7

Dependent Claim 37 words

The method for integrating the optical emitter and drive circuitry of claim 5 further including implanting regions above the optical emission area to form a wide bandgap junction which laterally confines current injection into the emission loci.

Claim 8

Independent Claim 118 words

A method of manufacturing a distributed drive vertically integrated transmitter optoelectronic integrated circuit, comprising the steps of: manufacturing a double heterostructure optical emission device having a first confinement layer; fabricating a plurality of drive devices on a top portion of the optical emission evice, the plurality of drive devices distributed throughout an emission area of the optical emission device, wherein the plurality of drive devices cooperate with the double heterostructure optical emission device to form a plurality of optical emission loci; forming peripheral drive circuitry on a portion of the optical emission device laterally spaced from the plurality of drive devices; and coating portions of the plurality of drive devices and peripheral drive circuitry with an antireflective material.

Claim 9

Independent Claim 118 words

A method of manufacturing a distributed drive vertically integrated transmitter optoelectronic integrated circuit, comprising the steps of: manufacturing a double heterostructure optical emission device having a first confinement layer; fabricating a plurality of drive devices on a top portion of the optical emission evice, the plurality of drive devices distributed throughout an emission area of the optical emission device, wherein the plurality of drive devices cooperate with the double heterostructure optical emission device to form a plurality of optical emission loci; forming peripheral drive circuitry on a portion of the optical emission device laterally spaced from the plurality of drive devices; and coating portions of the plurality of drive devices and peripheral drive circuitry with an antireflective material.

Claim 10

Dependent Claim 32 words

The method of manufacturing the optoelectronic integrated circuit of claim 7 further including fabricating the plurality of drive devices as field effect transistors having a buried layer over the first confinement layer.

Claim 11

Dependent Claim 68 words

The method of manufacturing the optoelectronic integrated circuit of claim 8 further including implanting at least one portion of the buried layer to form a vertical channel wherein an energy bandgap of a junction formed by the buried layer and the vertical channel constrains current to flow through the vertical channel into at least one of the plurality of optical emission loci rather than in a lateral direction.

Claim 12

Dependent Claim 39 words

The method of manufacturing the optoelectronic integrated circuit of claim 7 further including fabricating the plurality of drive devices as heterojunction bipolar transistors wherein the heterojunction bipolar transistors comprise a collector layer, a base layer, and an emitter layer.

Claim 13

Dependent Claim 32 words

The method of manufacturing the optoelectronic integrated circuit of claim 10 further including forming the collector layer of the heterojunction bipolar transistors from the first confinement layer of the optical emission device.

Claim 14

Dependent Claim 39 words

The method of manufacturing the optoelectronic integrated circuit of claim 10 further including fabricating the plurality of drive devices as vertically oriented transistors such that the plurality of optical emission loci are directly below the plurality of drive devices.

Claim 15

Dependent Claim 55 words

The method of manufacturing the optoelectronic integrated circuit of claim 10 further including implanting portions of the collector layer, the base layer, and the emitter layer wherein the implant forms a junction between the implanted portions and the first confinement layer, the junction having a wide energy bandgap which serves to laterally confine current flow.

Claim 16

Dependent Claim 28 words

The method of manufacturing the optoelectronic integrated circuit of claim 7 further including fabricating the peripheral drive circuitry in a lateral orientation relative to the optical emission device.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1996-06-21	1996-12-21	1997-06-22	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2000-06-21	2000-12-21	2001-06-22	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2004-06-21	2004-12-21	2005-06-22	$7700.00	Window Closed / Lapsed

Method of manufacturing a distributed drive optoelectronic integrated circuit

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