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US4956682A
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US
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Optoelectronic integrated circuit
Assignee: Panasonic Holdings Corp
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Filing: 1988-02-10
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Granted: 1990-09-11
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Expires: 2008-02-10
Abstract
Abstract An optoelectronic integrated circuit includes an N + type cladding layer, an N type cladding layer, an active layer smaller in band gap than the N type cladding layer and a P type waveguide greater in band gap than the active layer sequentially formed on a semi-insulating substrate, a P type cladding layer partially formed on the surface of the P type waveguide, a laser composed of these N + type and N type cladding layers, active layer, waveguide and P type cladding layer, and an N type emitted layer wider in band gap than the P type waveguide formed partially on the surface of the P type waveguide, thereby composing a heterojunction bipolar transistor using the N type cladding layer as the collector and the P type waveguide as the base.
Inventors
- 👤 Kiyoshi Ohnaka
- 👤 Hiraaki Tsujii
- 👤 Yoichi Sasai
- 👤 Jun Shibata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:01
CPC Classifications
H; H10; H10H; H10H29/00; H10H29/10; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/0261; H01S5/06; H01S5/062; H01S5/06203
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
170 words
An optoelectronic integrated circuit comprising: a laser device including a first cladding layer of a first type of conductivity formed on a semi-insulating substrate, an active layer formed on said first cladding layer of said first type of conductivity, a waveguide layer of a second type of conductivity formed on said active layer being wider in band gap than said active layer, and a second cladding layer of said second type of conductivity formed partially on the surface of said waveguide layer of said second type of conductivity being wider in band gap than said waveguide layer; and a heterojunction bipolar transistor including an emitter layer of said first type of conductivity formed partially on the surface of said waveguide layer of said second type of conductivity being wider in band gap than said waveguide layer, a collector formed by a portion of said first cladding layer of said first type of conductivity and a base formed by a portion of said waveguide layer of said second type of conductivity.
Claim 2
Dependent Claim
170 words
An optoelectronic integrated circuit comprising: a laser device including a first cladding layer of a first type of conductivity formed on a semi-insulating substrate, an active layer formed on said first cladding layer of said first type of conductivity, a waveguide layer of a second type of conductivity formed on said active layer being wider in band gap than said active layer, and a second cladding layer of said second type of conductivity formed partially on the surface of said waveguide layer of said second type of conductivity being wider in band gap than said waveguide layer; and a heterojunction bipolar transistor including an emitter layer of said first type of conductivity formed partially on the surface of said waveguide layer of said second type of conductivity being wider in band gap than said waveguide layer, a collector formed by a portion of said first cladding layer of said first type of conductivity and a base formed by a portion of said waveguide layer of said second type of conductivity.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-10 | 1994-03-12 | 1994-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-10 | 1998-03-12 | 1998-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-10 | 2002-03-12 | 2002-09-11 | $7700.00 | Window Closed / Lapsed |