US5221411A
Expired / Lapsed
US
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Method for synthesis and processing of continuous monocrystalline diamond thin films
Assignee: INTELLECTUAL PROPERTY VENTURES LLC
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Filing: 1991-04-08
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Granted: 1993-06-22
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Expires: 2011-04-08
Abstract
Abstract Disclosed is a method for the development of diamond thin films on a non-diamond substrate. The method comprises implanting carbon ions in a lattice-plane matched or lattice matched substrate. The implanted region of the substrate is then annealed to produce a diamond thin film on the non-diamond substrate. Also disclosed are the diamond thin films on non-diamond lattice-plane matched substrates produced by this method. Preferred substrates are lattice and plane matched to diamond such as copper, a preferred implanting method is ion implantation, and a preferred annealing method is pulsed laser annealing.
Inventors
- 👤 Jagdish Narayan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:40
CPC Classifications
C; C30; C30B; C30B13/00; C30B29/00; C30B29/02; C30B29/04
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
68 words
A method of producing a monocrystalline diamond film on a non-diamond substrate, comprising: providing a substrate having a carbon implanted region therein, wherein said substrate is lattice-plane matched with diamond; and then annealing said implanted region to rapidly melt and recrystallize substantially all of said implanted region without substantially raising the temperature of the remainder of the substrate to thereby produce a monocrystalline diamond film on said substrate.
Claim 2
Independent Claim
68 words
A method of producing a monocrystalline diamond film on a non-diamond substrate, comprising: providing a substrate having a carbon implanted region therein, wherein said substrate is lattice-plane matched with diamond; and then annealing said implanted region to rapidly melt and recrystallize substantially all of said implanted region without substantially raising the temperature of the remainder of the substrate to thereby produce a monocrystalline diamond film on said substrate.
Claim 3
Dependent Claim
15 words
A method according to claim 1, wherein said non-diamond substrate is a lattice matched substrate.
Claim 4
Independent Claim
15 words
A method according to claim wherein said annealing step comprises a pulsed laser annealing step.
Claim 5
Dependent Claim
26 words
A method according to claim 1, wherein said annealing step imparts sufficient energy to melt said implanted region, but insufficient energy to vaporize said implanted region.
Claim 6
Dependent Claim
23 words
A method according to claim 1, wherein said annealing step imparts about 3 to 5 J/cm 2 of energy into said implanted region.
Claim 7
Dependent Claim
32 words
A method according to claim 1, wherein said step of providing a substrate having a carbon implanted-region therein is carried out by ion implanting a region of said substrate with carbon ions.
Claim 8
Dependent Claim
23 words
A method according to claim 6, further comprising the step of implanting said non-diamond substrate with dopant ions before said laser annealing step.
Claim 9
Dependent Claim
36 words
A method according to claim 6, wherein said ion implanting step comprises ion implantation at a dose of about 1.0 to 3.0×10 18 ions cm -2 and an energy of about 60 KeV to 300 MeV.
Claim 10
Dependent Claim
16 words
A method according to claim 1, wherein said non-diamond substrate is a chemically polished non-diamond substrate.
Claim 11
Dependent Claim
46 words
The method of claim 6, wherein said carbon ions are comprised of ions selected from the group consisting of 13 C and 12 C ions, and wherein said ion implantation is performed such that the isotopic purity of said diamond film is greater than 99 percent.
Claim 12
Dependent Claim
21 words
The method of claim 6, wherein said carbon ions are comprised of a combination of 12 C and 13 C ions.
Claim 13
Independent Claim
90 words
A method of producing a monocrystalline diamond film on a non-diamond substrate which is lattice-plane matched with diamond, comprising: implanting carbon ions in a region of said non-diamond substrate using ion implantation of a dose of from about 1 to 3×10 18 ions/cm 2 with an energy of from about 60 KeV to 300 MeV; and then pulsed laser annealing said implanted region with sufficient energy to rapidly melt said implanted region but insufficient to cause vaporization of said implanted region, to produce a monocrystalline diamond film on said substrate.
Claim 14
Independent Claim
90 words
A method of producing a monocrystalline diamond film on a non-diamond substrate which is lattice-plane matched with diamond, comprising: implanting carbon ions in a region of said non-diamond substrate using ion implantation of a dose of from about 1 to 3×10 18 ions/cm 2 with an energy of from about 60 KeV to 300 MeV; and then pulsed laser annealing said implanted region with sufficient energy to rapidly melt said implanted region but insufficient to cause vaporization of said implanted region, to produce a monocrystalline diamond film on said substrate.
Claim 15
Dependent Claim
30 words
The method of claim 12, wherein said implanting step comprises the steps of: depositing carbon ions on said non-diamond substrate; and then depositing substrate atoms on said deposited carbon ions.
Claim 16
Dependent Claim
14 words
The method of claim 12, wherein said non-diamond substrate is lattice matched with diamond.
Claim 17
Dependent Claim
46 words
The method of claim 12, wherein said carbon ions are comprised of ions selected from the group consisting of 13 C and 12 C ions, and wherein said ion implantation is performed such that the isotopic purity of said diamond film is greater than 99 percent.
Claim 18
Independent Claim
21 words
The method of claims 12, wherein said carbon ions are comprised of a combination of 12 C and 13 C ions.
Claim 19
Independent Claim
95 words
A method of producing a monocrystalline diamond film on a non-diamond substrate, comprising: (a) providing a solid non-diamond substrate having a top surface portion and a carbon implanted region formed in said top surface portion, and wherein said substrate is lattice-plane matched with diamond; then (b) rapidly melting said implanted region formed in said top surface portion by pulsed laser annealing to form a liquid layer comprised of liquid carbon and liquid non-diamond substrte on said solid substrate; and then (c) solidifying said liquid layer to form a monocrystalline diamond film on said non-diamond substrate.
Claim 20
Independent Claim
95 words
A method of producing a monocrystalline diamond film on a non-diamond substrate, comprising: (a) providing a solid non-diamond substrate having a top surface portion and a carbon implanted region formed in said top surface portion, and wherein said substrate is lattice-plane matched with diamond; then (b) rapidly melting said implanted region formed in said top surface portion by pulsed laser annealing to form a liquid layer comprised of liquid carbon and liquid non-diamond substrte on said solid substrate; and then (c) solidifying said liquid layer to form a monocrystalline diamond film on said non-diamond substrate.
Claim 21
Dependent Claim
20 words
A method according to claim 17, wherein said surface portion of said implanted region is less than 1 micron thick.
Claim 22
Dependent Claim
37 words
A method according to claim 19, wherein said solidifying step is followed by: (d) repeating said melting and said solidifying steps on adjacent portions of said substrate to enlarge said monocrystalline diamond film on said non-diamond substrate.
Claim 23
Dependent Claim
19 words
A method according to claim 17, wherein said melting step is from about 20 to 60 nanoseconds in duration.
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