US5219769A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming Schottky diode
Assignee: Canon Inc
•
Filing: 1990-11-23
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Granted: 1993-06-15
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Expires: 2010-11-23
Abstract
Abstract A method for forming a diode provided with electrodes and a semiconductive layer. Such method comprises applying ion beam irradiation to a substrate having a protruding portion at a desired position for monocrystalline diamond formation. In this manner the substrate is and subjected to surface modification thereby effecting a process for diamond crystal growth on the substrate.
Inventors
- 👤 Takao Yonehara
- 👤 Hiroshi Kawarada
- 👤 Jing S. Ma
- 👤 Akio Hiraki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:52
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10D8/00; H10D8/01; H10D8/051; H10D8/60; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S117/00; Y10S117/913
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
87 words
A method for forming a Schottky diode, comprising the steps of: subjecting a substrate having a protruding portion at a desired position to surface modification; applying oblique ion beam irradiation to the substrate for removing a part of a modified surface portion of the substrate; effecting a process for diamond crystal growth on the substrate in the vicinity of the modified surface which remains on the substrate, so as to form a crystalline diamond body; and forming a Schottky electrode in contact with the crystalline diamond body.
Claim 2
Independent Claim
87 words
A method for forming a Schottky diode, comprising the steps of: subjecting a substrate having a protruding portion at a desired position to surface modification; applying oblique ion beam irradiation to the substrate for removing a part of a modified surface portion of the substrate; effecting a process for diamond crystal growth on the substrate in the vicinity of the modified surface which remains on the substrate, so as to form a crystalline diamond body; and forming a Schottky electrode in contact with the crystalline diamond body.
Claim 3
Dependent Claim
19 words
A method according to claim 1, wherein the height of the protruding portion is between 0.1 and 1 μm.
Claim 4
Dependent Claim
22 words
A method according to claim 1, wherein said oblique ion beam irradiation is conducted having an incident angle between 5° and 90°.
Claim 5
Dependent Claim
33 words
A method according to claim 1, wherein said surface modification is conducted by applying an ultrasonic wave to the substrate while the substrate is immersed in a liquid dispersion of fine diamond particles.
Claim 6
Dependent Claim
18 words
A method according to claim 1, wherein said diamond crystal growing process is conducted by chemical vapor deposition.
Claim 7
Independent Claim
86 words
A method for forming a Schottky diode, comprising the steps of; subjecting a substrate having a protruding portion at a desired position to ultrasonic treatment; applying oblique ion beam irradiation to the substrate for removing a part of the subjected substrate surface of the substrate; effecting a diamond crystal growing process on the substrate in the vicinity of the subjected surface which remains on the substrate, so as to form a crystalline diamond body; and forming a Schottky electrode in contact with the crystalline diamond body.
Claim 8
Independent Claim
86 words
A method for forming a Schottky diode, comprising the steps of; subjecting a substrate having a protruding portion at a desired position to ultrasonic treatment; applying oblique ion beam irradiation to the substrate for removing a part of the subjected substrate surface of the substrate; effecting a diamond crystal growing process on the substrate in the vicinity of the subjected surface which remains on the substrate, so as to form a crystalline diamond body; and forming a Schottky electrode in contact with the crystalline diamond body.
Claim 9
Dependent Claim
19 words
A method according to claim 6, where the height of the protruding portion is between 0.1 and 1 μm.
Claim 10
Dependent Claim
22 words
A method according to claim 6, wherein said oblique ion beam irradiation is conducted having an incident angle between 5° and 90°.
Claim 11
Dependent Claim
18 words
A method according to claim 6, wherein said diamond crystal growing process is conducted by chemical vapor deposition.
Claim 12
Dependent Claim
19 words
A method according to claim 6, wherein said ultrasonic treatment is conducted in liquid dispersion of fine diamond particles.
Claim 13
Independent Claim
84 words
A method for forming a Schottky diode, comprising the steps of: applying a diamond crystal growing process to a substrate on which nucleation sites are formed on at least one of an edge and a corner of a protruding portion provided at a desired position, so as to form a crystalline body on the edge or corner of the protruding portion; effecting monocrystalline diamond growth at the edge or corner of the protruding portion; and forming a Schottky electrode in contact with the body.
Claim 14
Independent Claim
84 words
A method for forming a Schottky diode, comprising the steps of: applying a diamond crystal growing process to a substrate on which nucleation sites are formed on at least one of an edge and a corner of a protruding portion provided at a desired position, so as to form a crystalline body on the edge or corner of the protruding portion; effecting monocrystalline diamond growth at the edge or corner of the protruding portion; and forming a Schottky electrode in contact with the body.
Claim 15
Dependent Claim
19 words
A method according to claim 11, wherein the height of said protruding portion is between 0.1 and 1 μm.
Claim 16
Dependent Claim
18 words
A method according to claim 11, wherein said diamond crystal growing process is conducted by chemical vapor deposition.
Claim 17
Dependent Claim
27 words
A method according to claim 11, wherein the formation of said nucleation sites is conducted by ion beam irradiation onto the substrate subjected to an ultrasonic treatment.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-06-14 | 1996-12-14 | 1997-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-14 | 2000-12-14 | 2001-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-14 | 2004-12-14 | 2005-06-15 | $7700.00 | Window Closed / Lapsed |