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Patent US5219767A successfully refreshed from Google Patents.
US5219767A
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Process for preparing semiconductor device
Assignee: NEC Electronics Corp
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Filing: 1991-08-22
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Granted: 1993-06-15
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Expires: 2011-08-22
Abstract
Abstract Disclosed is a process for preparing a semiconductor device which comprises a step of growing, in a molecular beam epitaxial growth apparatus, a P-type silicon epitaxial layer which becomes the base, on an N-type silicon epitaxial layer which becomes the collector; a step of growing, in a molecular beam epitaxial growth apparatus, an antimony doped N-type silicon amorphous layer which becomes the emitter, on said P-type silicon epitaxial layer; and a step of converting the above N-type silicon amorphous layer to an N-type silicon epitaxial layer by the solid phase epitaxy method according to the annealing heat treatment.
Inventors
- 👤 Hiroshi Kohno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 17:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S148/00; Y10S148/011; Y10S438/00; Y10S438/969
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
105 words
A process for preparing a semiconductor device which comprises steps of: growing, in a molecular beam epitaxial growth apparatus, a silicon epitaxial layer of one conductivity type which becomes the base, on a silicon epitaxial layer of the other conductivity type which becomes the collector; growing, in a molecular beam epitaxial growth apparatus, a silicon amorphous layer of the other conductivity type doped with an impurity which becomes the emitter, on said one conductivity type silicon epitaxial layer; and converting the above silicon amorphous layer to a silicon epitaxial layer of the other conductivity type by annealing heat treatment by a solid phase epitaxy method.
Claim 2
Dependent Claim
105 words
A process for preparing a semiconductor device which comprises steps of: growing, in a molecular beam epitaxial growth apparatus, a silicon epitaxial layer of one conductivity type which becomes the base, on a silicon epitaxial layer of the other conductivity type which becomes the collector; growing, in a molecular beam epitaxial growth apparatus, a silicon amorphous layer of the other conductivity type doped with an impurity which becomes the emitter, on said one conductivity type silicon epitaxial layer; and converting the above silicon amorphous layer to a silicon epitaxial layer of the other conductivity type by annealing heat treatment by a solid phase epitaxy method.
Claim 3
Dependent Claim
25 words
The process according to claim 1, wherein one conductivity type is a P-type, the other conductivity type is an N-type and the impurity is antimony.
Claim 4
Dependent Claim
59 words
The process according to claim 1, wherein the silicon amorphous layer is formed also on a silicon oxide or nitride layer formed on the silicon epitaxial collector layer for electrode separation and this portion of the silicon amorphous layer is converted to a polysilicon layer by the annealing heat treatment to form an emitter having a polysilicon/epitaxial silicon interface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-06-14 | 1996-12-14 | 1997-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-14 | 2000-12-14 | 2001-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-14 | 2004-12-14 | 2005-06-15 | $7700.00 | Window Closed / Lapsed |