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US5218511A
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Inter-silicide capacitor
Assignee: Philips Semiconductors Inc
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Filing: 1992-06-22
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Granted: 1993-06-08
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Expires: 2012-06-22
Abstract
Abstract A method produces a capacitor. On a substrate, a polysilicon layer is formed over an insulating region. A first metal-silicide layer is formed on top of the polysilicon layer. A dielectric layer is formed on top of the first metal-silicide layer. A second metal-silicide layer is formed on top of the dielectric layer. The second metal-silicide layer and the dielectric layer are etched to form a top electrode and dielectric region. The first metal-silicide layer and the polysilicon layer are etched to form a bottom electrode.
Inventors
- 👤 Subhash R. Nariani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:42
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
93 words
A method for producing a capacitor comprising the steps of: (a) forming a polysilicon layer over an insulating region on a substrate; (b) forming a first metal-silicide layer on top of the polysilicon layer; (c) forming a dielectric layer on top of the first metal-silicide layer; (d) forming a second metal-silicide layer on top of the dielectric layer; (e) etching the second metal-silicide layer and the dielectric layer to form a top electrode and a dielectric region; and, (f) etching the first metal-silicide layer and the polysilicon layer to form a bottom electrode.
Claim 2
Independent Claim
93 words
A method for producing a capacitor comprising the steps of: (a) forming a polysilicon layer over an insulating region on a substrate; (b) forming a first metal-silicide layer on top of the polysilicon layer; (c) forming a dielectric layer on top of the first metal-silicide layer; (d) forming a second metal-silicide layer on top of the dielectric layer; (e) etching the second metal-silicide layer and the dielectric layer to form a top electrode and a dielectric region; and, (f) etching the first metal-silicide layer and the polysilicon layer to form a bottom electrode.
Claim 3
Dependent Claim
19 words
A method as in claim 1 wherein the etching performed in step (f) also forms a gate of transistor.
Claim 4
Dependent Claim
33 words
A method as in claim 1 wherein in step (b) the first metal silicide layer is composed of Tungsten-silicide and wherein in step (d) the second metal silicide layer is composed of Tungsten-silicide.
Claim 5
Dependent Claim
16 words
A method as in claim 1 wherein the dielectric layer is composed of deposited silicon oxide.
Claim 6
Dependent Claim
16 words
A method as in claim 1 wherein the dielectric layer is composed of thermally grown oxide.
Claim 7
Dependent Claim
21 words
A method as in claim 1 wherein the dielectric layer is composed of a sandwich of oxide, nitride and oxide sub-layers.
Claim 8
Dependent Claim
41 words
A capacitor structure on an integrated circuit, the capacitor structure comprising: a bottom electrode; a dielectric region formed on top of the bottom electrode; and, a top electrode on top of the dielectric region, the top electrode being formed of metal-silicide.
Claim 9
Dependent Claim
41 words
A capacitor structure on an integrated circuit, the capacitor structure comprising: a bottom electrode; a dielectric region formed on top of the bottom electrode; and, a top electrode on top of the dielectric region, the top electrode being formed of metal-silicide.
Claim 10
Dependent Claim
25 words
A capacitor as in claim 7 wherein a layer used to form the bottom electrode is also used to form a gate of a transistor.
Claim 11
Dependent Claim
14 words
A capacitor as in claim 7 wherein the top electrode is composed of Tungsten-silicide.
Claim 12
Dependent Claim
16 words
A capacitor as in claim 7 wherein the dielectric region is formed of deposited silicon oxide.
Claim 13
Dependent Claim
16 words
A capacitor as in claim 7 wherein the dielectric region is formed of thermally grown oxide.
Claim 14
Dependent Claim
21 words
A capacitor as in claim 7 wherein the dielectric region is formed of a sandwich of oxide, nitride and oxide sub-layers.
Claim 15
Independent Claim
73 words
A method for producing a capacitor comprising the steps of: (a) forming a conductive layer over an insulating region on a substrate; (b) forming a dielectric layer on top of the conductive layer; (c) forming a metal-silicide layer on top of the dielectric layer; (d) etching the metal-silicide layer and the dielectric layer to form a top electrode and a dielectric region; and, (e) etching the conductive layer to form a bottom electrode.
Claim 16
Independent Claim
73 words
A method for producing a capacitor comprising the steps of: (a) forming a conductive layer over an insulating region on a substrate; (b) forming a dielectric layer on top of the conductive layer; (c) forming a metal-silicide layer on top of the dielectric layer; (d) etching the metal-silicide layer and the dielectric layer to form a top electrode and a dielectric region; and, (e) etching the conductive layer to form a bottom electrode.
Claim 17
Dependent Claim
20 words
A method as in claim 13 wherein the etching performed in step (e) also forms a gate of a transistor.
Claim 18
Dependent Claim
16 words
A method as in claim 13 wherein the step (a) comprises forming a doped polysilicon layer.
Claim 19
Dependent Claim
29 words
A method as in claim 13 wherein the step (a) comprises forming a doped polysilicon sub-layer and on top of the doped polysilicon sub-layer, forming a metal silicide sub-layer.
Claim 20
Dependent Claim
31 words
A method as in claim 16 wherein in step (a) the metal silicide sub-layer is composed of Tungsten-silicide and wherein in step (c) the metal silicide layer is composed of Tungsten-silicide.
Claim 21
Dependent Claim
17 words
A method as in claim 13 wherein step (b) comprises forming a layer of deposited silicon oxide.
Claim 22
Dependent Claim
17 words
A method as in claim 13 wherein step (b) comprises forming a layer of thermally grown oxide.
Claim 23
Dependent Claim
17 words
A method as in claim 13 wherein step (b) comprises forming sub-layers of oxide, nitride and oxide.
References Cited (Backward Citations)
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