US5218213A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOI wafer with sige
Assignee: Intersil Corp
•
Filing: 1992-06-01
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Granted: 1993-06-08
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Expires: 2012-06-01
Abstract
Abstract An SOI wafer is formed having a silicon-germanium layer between the epitaxial layer of the device and the insulative layer. The process includes bonding a second substrate to a silicon-germanium layer on a first substrate by an intermediate insulative layer. The first substrate is removed down to the silicon-germanium layer and the silicon layer is epitaxially formed on the silicon-germanium layer.
Inventors
- 👤 Stephen J. Gaul
- 👤 George V. Rouse
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 06:15
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6748; H10D30/6758; H10P; H10P36/00; H10P36/03; H10P36/07; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
51 words
A silicon on insulator wafer comprising: an insulator layer; a silicon-germanium layer on said insulator layer; a silicon layer on said silicon-germanium layer having a surface; and a homojunction device in said silicon layer having active regions in said silicon layer extending from said exposed surface down to said insulator layer.
Claim 2
Dependent Claim
51 words
A silicon on insulator wafer comprising: an insulator layer; a silicon-germanium layer on said insulator layer; a silicon layer on said silicon-germanium layer having a surface; and a homojunction device in said silicon layer having active regions in said silicon layer extending from said exposed surface down to said insulator layer.
Claim 3
Dependent Claim
13 words
A wafer according to claim 1 wherein said silicon-germanium layer is under strain.
Claim 4
Dependent Claim
18 words
A wafer according to claim 1 wherein said silicon layer has an epitaxial interface with said silicon-germanium layer.
Claim 5
Dependent Claim
17 words
A wafer according to claim 1 wherein said said silicon-germanium layer is bonded to said insulator layer.
Claim 6
Dependent Claim
21 words
A wafer according to claim 1 wherein said silicon-germanium layer has a thickness in the range of 100 to 3000 angstroms.
Claim 7
Dependent Claim
22 words
A wafer according to claim 1 wherein said insulative layer has a thickness in the range of 1000 angstroms to 4 microns.
Claim 8
Dependent Claim
22 words
A wafer according to claim 1 wherein said silicon layer has a thickness in the range of 1000 angstroms to 20 microns.
Claim 9
Dependent Claim
19 words
A wafer according to claim 1 wherein said silicon-germanium layer is not an active portion of said formed device.
Claim 10
Dependent Claim
53 words
A silicon on insulator wafer comprising: an insulator layer; a silicon-germanium layer on said insulator layer; a silicon layer on said silicon-germanium layer having a surface; and a homojunction device in said silicon layer having active regions in said silicon layer wherein said silicon-germanium layer produces a denuded zone in said silicon layer.
Claim 11
Dependent Claim
53 words
A silicon on insulator wafer comprising: an insulator layer; a silicon-germanium layer on said insulator layer; a silicon layer on said silicon-germanium layer having a surface; and a homojunction device in said silicon layer having active regions in said silicon layer wherein said silicon-germanium layer produces a denuded zone in said silicon layer.
Claim 12
Dependent Claim
61 words
A silicon on insulator wafer comprising: an insulator layer; a silicon-germanium layer on said insulator layer; a silicon layer on said silicon-germanium layer having a surface; and a homojunction device in said silicon layer having active regions in said silicon layer wherein said silicon-germanium layer forms a layer of low minority carrier lifetime between said silicon layer and said insulator layer.
Claim 13
Dependent Claim
61 words
A silicon on insulator wafer comprising: an insulator layer; a silicon-germanium layer on said insulator layer; a silicon layer on said silicon-germanium layer having a surface; and a homojunction device in said silicon layer having active regions in said silicon layer wherein said silicon-germanium layer forms a layer of low minority carrier lifetime between said silicon layer and said insulator layer.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-06-07 | 1996-12-07 | 1997-06-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-06-07 | 2000-12-07 | 2001-06-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-06-07 | 2004-12-07 | 2005-06-08 | $7700.00 | Window Closed / Lapsed |