US5214304A
Expired / Lapsed
US
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Semiconductor device
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1992-03-12
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Granted: 1993-05-25
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Expires: 2012-03-12
Abstract
Abstract A semiconductor device comprises: a insulating film having a first part and a second part, the second part being thiner than the first part; and a polycrystalline silicon film having a first part arranged over the first part of the insulating film and a second part arranged over the second part of the insulating film, the second part of the polycrystalline silicon film having a lower concentration of impurities than that of the first part of the polycrystalline silicon film.
Inventors
- 👤 Taiji Ema
- 👤 Kazunari Shirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:17
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10D; H10D1/00; H10D1/60; H10D1/68; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/60; H10D64/66; H10D64/661; H10W; H10W20/00; H10W20/01; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
85 words
A semiconductor device comprising: first and second insulating films, the second insulating film being thinner than the first insulating film; and a polycrystalline silicone film having a first part arranged on the first insulating film and a second part arranged on the second insulating film, the second part of said polycrystalline silicon film having a substantially uniform concentration of impurities, the second part of said polycrystalline silicon film having a lower concentration of impurities than that of the first part of said polycrystalline silicon film.
Claim 2
Dependent Claim
85 words
A semiconductor device comprising: first and second insulating films, the second insulating film being thinner than the first insulating film; and a polycrystalline silicone film having a first part arranged on the first insulating film and a second part arranged on the second insulating film, the second part of said polycrystalline silicon film having a substantially uniform concentration of impurities, the second part of said polycrystalline silicon film having a lower concentration of impurities than that of the first part of said polycrystalline silicon film.
Claim 3
Dependent Claim
65 words
A semiconductor device according to claim 1, wherein said device comprises a MIS transistor having a gate electrode composed of the second part of said polycrystalline silicon film, a gate insulator composed of the second insulating film, a field insulator composed of the first insulating film, and a wiring composed of the first part of said polycrystalline silicon film and connected to the gate electrode.
Claim 4
Dependent Claim
24 words
A semiconductor device according to claim 2, wherein said first and second parts of said polycrystalline silicon film are arranged in a single layer.
Claim 5
Dependent Claim
19 words
A semiconductor device according to claim 2, wherein the first and second insulating films are arranged in different layers.
Claim 6
Dependent Claim
57 words
A semiconductor device according to claim 1, wherein the concentration of impurities in the second part of said polycrystalline silicon film is 10 18 /cm 3 to 10 20 /cm 3 , and the concentration of impurities in the first part of the polycrystalline silicon film if 10 19 /cm 3 to 10 21 /cm 3 .
Claim 7
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein a thickness of the second insulating film is less than 100 Å.
Claim 8
Dependent Claim
20 words
A semiconductor device according to claim 6, wherein a thickness of the first insulating film is more than 1000 Å.
Claim 9
Dependent Claim
20 words
A semiconductor device according to claim 5, wherein a thickness of the second insulating film is less than 100 Å.
Claim 10
Dependent Claim
20 words
A semiconductor device according to claim 8, wherein a thickness of the first insulating film is more than 1000 Å.
Claim 11
Dependent Claim
20 words
A semiconductor device according to claim 1, wherein the thickness of the second insulating film is less than 100 Å.
Claim 12
Dependent Claim
101 words
A semiconductor device comprising: first and second insulating films, the second insulating film being thinner than the first insulating film; and a polycrystalline silicon film having a first part arranged on the first insulating film and a second part arranged on the second insulating film, the second part of said polycrystalline silicon film having a concentration of impurities, the second part of said polycrystalline silicon film having a lower concentration of impurities than that of the first part of said polycrystalline silicon film, and the first and the second parts of said polycrystalline silicon film being formed as a continuous layer.
Claim 13
Dependent Claim
101 words
A semiconductor device comprising: first and second insulating films, the second insulating film being thinner than the first insulating film; and a polycrystalline silicon film having a first part arranged on the first insulating film and a second part arranged on the second insulating film, the second part of said polycrystalline silicon film having a concentration of impurities, the second part of said polycrystalline silicon film having a lower concentration of impurities than that of the first part of said polycrystalline silicon film, and the first and the second parts of said polycrystalline silicon film being formed as a continuous layer.
Claim 14
Dependent Claim
78 words
Dynamic type semiconductor memory device comprising: a word line; a bit line; and a dynamic type memory cell, connected to said word line and said bit line, including a stacked type capacitor comprising a storage electrode, a dielectric film formed on the storage electrode, and a capacitor plate electrode formed on the dielectric film, the capacitor plate electrode being comprised of a first polycrystalline film having a lower concentration of impurities than that of a second polycrystalline film.
Claim 15
Dependent Claim
78 words
Dynamic type semiconductor memory device comprising: a word line; a bit line; and a dynamic type memory cell, connected to said word line and said bit line, including a stacked type capacitor comprising a storage electrode, a dielectric film formed on the storage electrode, and a capacitor plate electrode formed on the dielectric film, the capacitor plate electrode being comprised of a first polycrystalline film having a lower concentration of impurities than that of a second polycrystalline film.
Claim 16
Dependent Claim
33 words
A dynamic type semiconductor memory device according to claim 12, wherein one of the word line, the bit line, the storage electrode is comprised of a second part of the polycrystalline silicon film.
Claim 17
Dependent Claim
22 words
A dynamic type semiconductor memory device according to claim 12, wherein the thickness of the dielectric film is less than 100 Å.
Claim 18
Dependent Claim
60 words
A dynamic type semiconductor memory device according to claim 12, wherein the concentration of impurities in a first part of said polycrystalline silicon film is 10 18 /cm 3 to 10 20 /cm 3 , and the concentration of impurities in a second part of the polycrystalline silicon film is 10 20 /cm 3 to 10 21 /cm 3 .
Claim 19
Dependent Claim
116 words
A semiconductor device comprising: first and second insulating films, the second insulating film being thinner than the first insulating film; a first polycrystalline silicon film arranged over the first insulating film and a second polycrystalline silicon film arranged over the second insulating film, the second polycrystalline silicon film having a concentration of impurities, the second polycrystalline silicon film having a lower concentration of impurities than that of the first polycrystalline silicon film; and a dynamic type memory cell including a cell capacitor composed of a charge storage electrode arranged underneath the second insulating film, a capacitor dielectric film composed of the second insulating film, and a capacitor plate electrode composed of the second polycrystalline silicon film.
Claim 20
Dependent Claim
116 words
A semiconductor device comprising: first and second insulating films, the second insulating film being thinner than the first insulating film; a first polycrystalline silicon film arranged over the first insulating film and a second polycrystalline silicon film arranged over the second insulating film, the second polycrystalline silicon film having a concentration of impurities, the second polycrystalline silicon film having a lower concentration of impurities than that of the first polycrystalline silicon film; and a dynamic type memory cell including a cell capacitor composed of a charge storage electrode arranged underneath the second insulating film, a capacitor dielectric film composed of the second insulating film, and a capacitor plate electrode composed of the second polycrystalline silicon film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-05-24 | 1996-11-23 | 1997-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-24 | 2000-11-23 | 2001-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-24 | 2004-11-23 | 2005-05-25 | $7700.00 | Window Closed / Lapsed |