Patent US5210446A successfully refreshed from Google Patents.
US5210446A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Substrate potential generating circuit employing Schottky diodes
Assignee: Texas Instruments Inc
•
Filing: 1991-11-26
•
Granted: 1993-05-11
•
Expires: 2011-11-26
Abstract
Abstract Substrate bias generating circuit for MIS semiconductor device comprising an oscillating circuit, a capacitor, an MOS transistor and a Schottky barrier diode. One end of the oscillating circuit is connected to a V ss terminal which provides a reference potential. The capacitor is connected at one end thereof to the other end of the oscillating circuit. The MOS transistor is connected between the V ss terminal and the other end of the capacitor, with the Schottky barrier diode being connected between a node located between the other end of the capacitor and the MOS transistor, and the substrate. The Schottky barrier diode is operated by the majority carrier, thereby enabling the majority charge to be directly pumped out of the substrate and into the terminal V ss through the Schottky barrier diode with stability without requiring an injection of the minority charge into the semiconductor substrate. The pumping of the charge out of the substrate is permitted by lowering the potential of the node through the oscillating circuit.
Inventors
- 👤 Takayuki Niuya
- 👤 Yoshihiro Ogata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:30
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
161 words
A semiconductor substrate potential generating circuit comprising: an oscillating circuit; a capacitor element including first and second capacitor plate and a dielectric therebetween; a field-effect transistor having a control gate and a source-drain path connected at a node to one of the capacitor plates of said capacitor element and to a reference potential terminal; said oscillating circuit being connected to the other capacitor plate of said capacitor element and to the reference potential terminal; a Schottky barrier diode connected to the semiconductor substrate whose bias potential is to be controlled on its cathode side and to said one plate of said capacitor element on its anode side with the node associated with the source-drain path of said field-effect transistor being connected between said capacitor element and said Schottky barrier diode; and majority charge being pumped directly out of said substrate and into the reference potential terminal via said Schottky barrier diode without an injection of the minority charge into the substrate.
Claim 2
Dependent Claim
161 words
A semiconductor substrate potential generating circuit comprising: an oscillating circuit; a capacitor element including first and second capacitor plate and a dielectric therebetween; a field-effect transistor having a control gate and a source-drain path connected at a node to one of the capacitor plates of said capacitor element and to a reference potential terminal; said oscillating circuit being connected to the other capacitor plate of said capacitor element and to the reference potential terminal; a Schottky barrier diode connected to the semiconductor substrate whose bias potential is to be controlled on its cathode side and to said one plate of said capacitor element on its anode side with the node associated with the source-drain path of said field-effect transistor being connected between said capacitor element and said Schottky barrier diode; and majority charge being pumped directly out of said substrate and into the reference potential terminal via said Schottky barrier diode without an injection of the minority charge into the substrate.
Claim 3
Dependent Claim
153 words
A semiconductor substrate potential generating system comprising: a first semiconductor substrate potential generating circuit for pumping charge from a semiconductor substrate into a reference potential terminal; a second semiconductor substrate potential generating circuit for pumping charge from the semiconductor substrate into the reference potential terminal; a power-up holding circuit connected between the semiconductor substrate and the reference potential terminal and to one of said first and second semiconductor substrate potential generating circuits for controlling the pumping of charge from the substrate into the reference potential terminal by the said one of said first and second semiconductor substrate potential generating circuits; and logic means interconnected with said first and second semiconductor substrate potential generating circuits; said first and second semiconductor substrate potential generating circuit being responsive to said logic means so as to operate in opposition to each other for providing charge pumping from the substrate into the reference potential terminal at enhanced efficiency.
Claim 4
Dependent Claim
153 words
A semiconductor substrate potential generating system comprising: a first semiconductor substrate potential generating circuit for pumping charge from a semiconductor substrate into a reference potential terminal; a second semiconductor substrate potential generating circuit for pumping charge from the semiconductor substrate into the reference potential terminal; a power-up holding circuit connected between the semiconductor substrate and the reference potential terminal and to one of said first and second semiconductor substrate potential generating circuits for controlling the pumping of charge from the substrate into the reference potential terminal by the said one of said first and second semiconductor substrate potential generating circuits; and logic means interconnected with said first and second semiconductor substrate potential generating circuits; said first and second semiconductor substrate potential generating circuit being responsive to said logic means so as to operate in opposition to each other for providing charge pumping from the substrate into the reference potential terminal at enhanced efficiency.
Claim 5
Dependent Claim
170 words
A semiconductor substrate potential generating system as set forth in claim 2, wherein each of said first and second semiconductor substrate potential generating circuits includes: a capacitor element having first and second plates with a dielectric therebetween, a field-effect transistor having a control gate and a source-drain path connected at a node to one of the capacitor plates of said capacitor element and to the reference potential terminal, and a diode connected to said semiconductor substrate on its cathode side and to said one plate of said capacitor element on its anode side with the node associated with the source-drain path of said field-effect transistor being connected between said capacitor element and said diode; and an oscillating circuit connected to the other capacitor plate of said capacitor element of each of said first and second semiconductor substrate potential generating circuits; said logic means being connected between said oscillating circuit and the other capacitor plate of each of said capacitor elements of said first and second semiconductor substrate potential generating circuits.
Claim 6
Dependent Claim
137 words
A semiconductor substrate potential generating system as set forth in claim 3, wherein said power-up holding circuit includes first and second field-effect transistors having respective control gates; said first field-effect transistor of said power-up holding circuit being connected between the substrate and the reference potential terminal, said second field-effect transistor of said power-up holding circuit being connected between the control gate of said field-effect transistor of said second semiconductor substrate potential generating circuit and the control gate of said first field-effect transistor of said power-up holding circuit, and the control gate of said second field-effect transistor of said power-up holding circuit being connected between said diode and said capacitor element of said second semiconductor substrate potential generating circuit so as to be interposed between said one plate of said capacitor element and said anode of said diode.
Claim 7
Dependent Claim
53 words
A semiconductor substrate potential generating system as set forth in claim 4, wherein the control gate of said field-effect transistor of said first semiconductor substrate potential generating circuit is connected between said one capacitor plate of said capacitor element and the anode of said diode of said second semiconductor substrate potential generating circuit.
Claim 8
Dependent Claim
32 words
A semiconductor substrate potential generating system as set forth in claim 5, wherein said diode of each of said first and second semiconductor substrate potential generating circuits is a Schottky barrier diode.
Claim 9
Dependent Claim
106 words
A semiconductor substrate potential generating system as set forth in claim 6, wherein said logic means includes a NOR gate connected to the other capacitor plate of said capacitor element of said first semiconductor substrate potential generating circuit, a NAND gate connected to the other capacitor plate of said capacitor element of said second semiconductor substrate potential generating circuit, the output of said oscillating circuit being connected to one input of each of said NOR gate and said NAND gate, and a delay circuit connected between the output of said oscillating circuit and the other input of each of said NOR gate and said NAND gate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-10 | 1996-11-09 | 1997-05-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-10 | 2000-11-09 | 2001-05-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-10 | 2004-11-09 | 2005-05-11 | $7700.00 | Window Closed / Lapsed |