Semiconductor device having shallow quantum well region

Claim 2

A semiconductor device comprising a quantum well region including first and second barrier layers and a quantum well layer positioned between the first and second barrier layers, the first and second barrier layers comprising wide bandgap semiconductor material and the quantum well layer comprising narrow bandgap semiconductor material so that the first and second barrier layers exhibit an effective bandgap energy greater than the effective bandgap energy of the quantum well layer, said quantum well region exhibiting an exciton absorption energy and a longitudinal optical phonon energy, wherein the improvement comprises each of the first and second barrier layers having their respective effective bandgap energy less than the sum of the longitudinal optical phonon energy and the exciton absorption energy.

Claim 3

The semiconductor device as defined in claim 1 wherein the wide bandgap semiconductor material includes Al x Ga 1-x As and the narrow bandgap semiconductor material includes GaAs.

Claim 4

The semiconductor device as defined in claim 1 wherein Al concentration x is in the range 0.005<x≦0.04.

Claim 5

The semiconductor device as defined in claim 1 wherein the wide bandgap semiconductor material includes Al x Ga 1-x As and the narrow bandgap semiconductor material includes Al y Ga 1-y As where x>y and 0≦x,y≦1.0.

Claim 6

The semiconductor device as defined in claim 1 wherein the wide bandgap semiconductor material includes GaAs and the narrow bandgap semiconductor material includes InGaAs.

Claim 7

The semiconductor device as defined in claim 1 wherein the wide bandgap semiconductor material includes InAlGaAs and the narrow bandgap semiconductor material includes InGaAs.

Claim 8

The semiconductor device as defined in claim 1 wherein the wide bandgap semiconductor material includes InGaAsP and the narrow bandgap semiconductor material includes InP.

Claim 9

A semiconductor device grown on a semiconductor substrate comprising an n-type conductivity region, an intrinsic quantum well region, and a p-type conductivity region, the intrinsic quantum well region including first and second barrier layers and a quantum well layer positioned between the first and second barrier layers, the first and second barrier layers comprising wide bandgap semiconductor material and the quantum well layer comprising narrow bandgap semiconductor material so that the first and second barrier layers exhibit an effective bandgap energy greater than the effective bandgap energy of the quantum well layer, said quantum well region exhibiting an exciton absorption energy and a longitudinal optical phonon energy, wherein the improvement comprises each of the first and second barrier layers having their respective effective bandgap energy less than the sum of the longitudinal optical phonon energy and the exciton absorption energy.

Claim 10

A semiconductor device grown on a semiconductor substrate comprising an n-type conductivity region, an intrinsic quantum well region, and a p-type conductivity region, the intrinsic quantum well region including first and second barrier layers and a quantum well layer positioned between the first and second barrier layers, the first and second barrier layers comprising wide bandgap semiconductor material and the quantum well layer comprising narrow bandgap semiconductor material so that the first and second barrier layers exhibit an effective bandgap energy greater than the effective bandgap energy of the quantum well layer, said quantum well region exhibiting an exciton absorption energy and a longitudinal optical phonon energy, wherein the improvement comprises each of the first and second barrier layers having their respective effective bandgap energy less than the sum of the longitudinal optical phonon energy and the exciton absorption energy.

Claim 11

The semiconductor device as defined in claim 8 wherein the wide bandgap semiconductor material includes Al x Ga 1-x As and the narrow bandgap semiconductor material includes GaAs.

Claim 12

The semiconductor device as defined in claim 9 wherein Al concentration x is in the range 0.005<x≦0.04.

Claim 13

The semiconductor device as defined in claim 8 wherein the wide bandgap semiconductor material includes Al x Ga 1-x As and the narrow bandgap semiconductor material includes Al y Ga 1-y As where x>y and 0≦x,y≦1.0.

Claim 14

The semiconductor device as defined in claim 8 wherein the wide bandgap semiconductor material includes GaAs and the narrow bandgap semiconductor material includes InGaAs.

Claim 15

The semiconductor device as defined in claim 8 wherein the wide bandgap semiconductor material includes InAlGaAs and the narrow bandgap semiconductor material includes InGaAs.

Claim 16

The semiconductor device as defined in claim 8 wherein the wide bandgap semiconductor material includes InGaAsP and the narrow bandgap semiconductor material includes InP.

Claim 17

An optical device comprising: means responsive to light for generating a photocurrent; a structure having a semiconductor quantum well region; and means responsive to the photocurrent for electrically controlling an optical absorption of the semiconductor quantum well region in order to cause the optical absorption to vary in response to variations on the photocurrent; the optical device being characterized in that, the semiconductor quantum well region includes first and second barrier layers and a quantum well layer positioned between the first and second barrier layers, the first and second barrier layers comprising wide bandgap semiconductor material and the quantum well layer comprising narrow bandgap semiconductor material so that the first and second barrier layers exhibit an effective bandgap energy greater than the effective bandgap energy of the quantum well layer, said quantum well region exhibiting an exciton absorption energy and a longitudinal optical phonon energy, and each of the first and second barrier layers having their respective effective bandgap energy less than the sum of the longitudinal optical phonon energy and the exciton absorption energy.

Claim 18

An optical device comprising: means responsive to light for generating a photocurrent; a structure having a semiconductor quantum well region; and means responsive to the photocurrent for electrically controlling an optical absorption of the semiconductor quantum well region in order to cause the optical absorption to vary in response to variations on the photocurrent; the optical device being characterized in that, the semiconductor quantum well region includes first and second barrier layers and a quantum well layer positioned between the first and second barrier layers, the first and second barrier layers comprising wide bandgap semiconductor material and the quantum well layer comprising narrow bandgap semiconductor material so that the first and second barrier layers exhibit an effective bandgap energy greater than the effective bandgap energy of the quantum well layer, said quantum well region exhibiting an exciton absorption energy and a longitudinal optical phonon energy, and each of the first and second barrier layers having their respective effective bandgap energy less than the sum of the longitudinal optical phonon energy and the exciton absorption energy.