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US5208468A
Expired / Lapsed
US
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Semiconductor laser device with a sulfur-containing film provided between the facet and the protective film
Assignee: Sharp Corp
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Filing: 1991-07-05
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Granted: 1993-05-04
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Expires: 2011-07-05
Abstract
Abstract A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.
Inventors
- 👤 Hidenori Kawanishi
- 👤 Taiji Morimoto
- 👤 Shinji Kaneiwa
- 👤 Hiroshi Hayashi
- 👤 Nobuyuki Miyauchi
- 👤 Seiki Yano
- 👤 Mitsuhiro Matsumoto
- 👤 Kazuaki Sasaki
- 👤 Masaki Kondo
- 👤 Takehiro Shiomoto
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:07
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/0281; H01S5/0201; H01S5/0282; H01S5/0283
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
105 words
In a semiconductor laser device which emits laser light from a facet, comprising a multi-layered structure including a pair of electrodes and formed on a semiconductor substrate, said multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on said facet of said multi-layered structure, the device wherein a film containing sulfur is provided between the facet and the protective film so as to be formed directly on said facet; and wherein said sulfur-containing film consists essentially of chemical elements selected from the group consisting of gallium, aluminum, arsenic, nitrogen, hydrogen, and sodium, in addition to a sulfide of AlGaAs.
Claim 2
Dependent Claim
105 words
In a semiconductor laser device which emits laser light from a facet, comprising a multi-layered structure including a pair of electrodes and formed on a semiconductor substrate, said multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on said facet of said multi-layered structure, the device wherein a film containing sulfur is provided between the facet and the protective film so as to be formed directly on said facet; and wherein said sulfur-containing film consists essentially of chemical elements selected from the group consisting of gallium, aluminum, arsenic, nitrogen, hydrogen, and sodium, in addition to a sulfide of AlGaAs.
Claim 3
Dependent Claim
41 words
A semiconductor laser device according to claim 1, wherein said protective film is formed from an oxygen-free material selected from the group consisting of Si 3 N 4 , AlN, C, MgF 2 , CaF 2 , NaF, ZnS, and ZnSe.
Claim 4
Dependent Claim
52 words
A semiconductor laser device, comprising: an AlGaAs active layer for laser oscillation which layer includes a facet which emits laser light; a sulfur containing film on the facet formed so as to remove 99% or more of the oxygen present on the facet; and a protective film covering the sulfur containing film.
Claim 5
Dependent Claim
52 words
A semiconductor laser device, comprising: an AlGaAs active layer for laser oscillation which layer includes a facet which emits laser light; a sulfur containing film on the facet formed so as to remove 99% or more of the oxygen present on the facet; and a protective film covering the sulfur containing film.
Claim 6
Dependent Claim
39 words
The semiconductor laser device of claim 3, wherein the protective layer is comprised of a material selected from the group consisting of Si 3 N 4 , AlN, C, MgF 2 , CaF 2 , NaF, ZnS and ZnSe.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-05-03 | 1996-11-02 | 1997-05-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-05-03 | 2000-11-02 | 2001-05-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-05-03 | 2004-11-02 | 2005-05-04 | $7700.00 | Window Closed / Lapsed |