Method of implementation of surface-emission semiconductor lasers, and lasers obtained by the method

Claim 1

A method for implementing a surface-emission laser whose light emission occurs along a direction z perpendicular to the surface of said laser, comprising the steps of: epitaxially growing on a single-crystal substrate a single-crystal Bragg mirror made up of alternate layers of different compounds, said substrate and said mirror being doped with a first impurity capable of creating in the doped region free charge carriers of a first type; epitaxially growing at least one single-crystal layer of a first compound with a forbidden band E 2 ; epitaxially growing single-crystal multiple layers forming an active medium forming a plurality of quantum wells delimited and separated by intermediate layers of a compound with a forbidden band E 1 , said quantum wells being thin layers of another compound with a forbidden band E 0 <E 1 ≦E 2 , said multilayer active medium having transverse dimensions perpendicular to said direction z larger than those of said active region of the laser to be obtained; epitaxially growing a last single-crystal layer of a compound having a forbidden band E 1 ≦E 2 ; masking a portion of the surface of said last layer of the active region to define said transverse dimensions of said active region; implanting and diffusing a second impurity in the region surrounding said active region previously masked to a depth reaching said first epitaxial layer with a forbidden band E 2 , said second impurity being capable of creating in said region surrounding the masked active region free charge carriers of a second type different from said first type; depositing metal ohmic contacts on said last epitaxial layer with a forbidden band E 1 in electrical contact therewith under said substrate and in contact therewith; and depositing a semitransparent mirror on said active region.

Claim 2

A method for implementing a surface-emission laser whose light emission occurs along a direction z perpendicular to the surface of said laser, comprising the steps of: epitaxially growing on a single-crystal substrate a single-crystal Bragg mirror made up of alternate layers of different compounds, said substrate and said mirror being doped with a first impurity capable of creating in the doped region free charge carriers of a first type; epitaxially growing at least one single-crystal layer of a first compound with a forbidden band E 2 ; epitaxially growing single-crystal multiple layers forming an active medium forming a plurality of quantum wells delimited and separated by intermediate layers of a compound with a forbidden band E 1 , said quantum wells being thin layers of another compound with a forbidden band E 0 <E 1 ≦E 2 , said multilayer active medium having transverse dimensions perpendicular to said direction z larger than those of said active region of the laser to be obtained; epitaxially growing a last single-crystal layer of a compound having a forbidden band E 1 ≦E 2 ; masking a portion of the surface of said last layer of the active region to define said transverse dimensions of said active region; implanting and diffusing a second impurity in the region surrounding said active region previously masked to a depth reaching said first epitaxial layer with a forbidden band E 2 , said second impurity being capable of creating in said region surrounding the masked active region free charge carriers of a second type different from said first type; depositing metal ohmic contacts on said last epitaxial layer with a forbidden band E 1 in electrical contact therewith under said substrate and in contact therewith; and depositing a semitransparent mirror on said active region.