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JPS6444085A Expired / Lapsed JP ⏱️ 0.0 years remaining

Arrayed semiconductor laser

Assignee: Seiko Epson Corp
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Filing: 1987-08-12
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Granted: —
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Expires: 2007-08-12
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Abstract

Abstract PURPOSE:To obtain a large output laser which can be used similarly to a single chip by forming a laser structure in which semiconductor lasers are disposed more densely. CONSTITUTION:The light emitting units 101 of a semiconductor laser are disposed at the center of a honeycomb. Further, the laser has a structure 201 in which lights are radiated from a substrate surface for forming the laser or the surface of a thin film formed on the substrate. A plurality of the semiconductor lasers are formed on the same substrate. Thus, high output and single peak monolithically arrayed semiconductor lasers are obtained, and can be easily hybrid-integrated by employing a surface emitting type laser, and light emitting units are formed fundamentally at the center of a honeycomb to raise its mounting density and light emitting density.

Inventors

  • 👤 Tomio Sonehara
  • 👤 Osamu Yokoyama
  • 👤 Kunihiro Inoue
  • 👤 Hiroshi Komatsu
  • 👤 Katsuhiro Teraishi

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-06 06:19
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/42; H01S5/423

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