Arrayed semiconductor laser
Abstract
Abstract PURPOSE:To obtain a large output laser which can be used similarly to a single chip by forming a laser structure in which semiconductor lasers are disposed more densely. CONSTITUTION:The light emitting units 101 of a semiconductor laser are disposed at the center of a honeycomb. Further, the laser has a structure 201 in which lights are radiated from a substrate surface for forming the laser or the surface of a thin film formed on the substrate. A plurality of the semiconductor lasers are formed on the same substrate. Thus, high output and single peak monolithically arrayed semiconductor lasers are obtained, and can be easily hybrid-integrated by employing a surface emitting type laser, and light emitting units are formed fundamentally at the center of a honeycomb to raise its mounting density and light emitting density.
Inventors
- 👤 Tomio Sonehara
- 👤 Osamu Yokoyama
- 👤 Kunihiro Inoue
- 👤 Hiroshi Komatsu
- 👤 Katsuhiro Teraishi
Bibliographic Details
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