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US5202280A
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Method for fabricating a semiconductor device
Assignee: NEC Electronics Corp
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Filing: 1992-06-08
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Granted: 1993-04-13
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Expires: 2012-06-08
Abstract
Abstract In a method for fabricating a semiconductor device according to the invention, a tantalum oxide layer is formed on a semiconductor substrate, titanium ions are injected into the tantalum oxide layer, and the tantalum oxide layer is heated to be fined.
Inventors
- 👤 Satoshi Kamiyama
- 👤 Yuchiro Numasawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:33
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/01; H10D1/045; H10D1/047
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
63 words
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor substrate formed with layers and regions for said semiconductor device; forming a tantalum oxide layer for a capacitive layer on said semiconductor substrate; injecting titanium ions having a predetermined dose into said tantalum oxide layer with a predetermined injection energy; and heating said tantalum oxide layer to be fine.
Claim 2
Independent Claim
63 words
A method for fabricating a semiconductor device, comprising the steps of: providing a semiconductor substrate formed with layers and regions for said semiconductor device; forming a tantalum oxide layer for a capacitive layer on said semiconductor substrate; injecting titanium ions having a predetermined dose into said tantalum oxide layer with a predetermined injection energy; and heating said tantalum oxide layer to be fine.
Claim 3
Dependent Claim
34 words
A method for fabricating a semiconductor device according to claim 1, wherein: said step of forming a tantalum oxide layer is carried out by chemical vapor deposition using organic tantalum as a main material.
Claim 4
Dependent Claim
36 words
A method for fabricating a semiconductor device according to claim 1, wherein: said step of injecting titanium ions is carried out by using titanium ions having doses of 10 12 to 10 16 cm 2 .
Claim 5
Dependent Claim
27 words
A method for fabricating a semiconductor device according to claim 1, wherein: said step of heating a tantalum oxide layer is carried out in an oxygen atmosphere.
Claim 6
Dependent Claim
31 words
A method for fabricating a semiconductor device according to claim 1, wherein: said step of heating a tantalum oxide layer is carried out at a temperature of 600° to 1000° C.
Claim 7
Independent Claim
81 words
A method for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate formed with layers and regions for said semiconductor device; providing a lower electrode of polysilicon on a semiconductor substrate; nitrifying a surface of said lower electrode; forming a tantalum oxide layer for a capacitive layer on said nitrified lower electrode; injecting titanium ions into said tantalum oxide layer; heating said tantalum oxide layer to be fine; and providing an upper electrode on said tantalum oxide layer.
Claim 8
Independent Claim
81 words
A method for fabricating a semiconductor device comprising the steps of: providing a semiconductor substrate formed with layers and regions for said semiconductor device; providing a lower electrode of polysilicon on a semiconductor substrate; nitrifying a surface of said lower electrode; forming a tantalum oxide layer for a capacitive layer on said nitrified lower electrode; injecting titanium ions into said tantalum oxide layer; heating said tantalum oxide layer to be fine; and providing an upper electrode on said tantalum oxide layer.
Claim 9
Dependent Claim
27 words
A method for fabricating a semiconductor device according to claim 6, further comprising the step of; doping phosphorus in said lower electrode before said step of nitrifying.
Claim 10
Dependent Claim
27 words
A method for fabricating a semiconductor device according to claim 6, wherein: said step of nitrifying a lower electrode is carried out by using a lamp heater.
Claim 11
Dependent Claim
52 words
A method for fabricating a semiconductor device according to claim 6, wherein: said step of providing an upper electrode is carried out by sputtering or chemical vapor deposition using a single layer of titanium nitride, tungsten or molybdenum, or a combination layer of titanium nitride and tungsten or titanium nitride and molybdenum.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-04-12 | 1996-10-12 | 1997-04-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-12 | 2000-10-12 | 2001-04-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-12 | 2004-10-12 | 2005-04-13 | $7700.00 | Window Closed / Lapsed |