Patent US5200639A successfully refreshed from Google Patents.
US5200639A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device with isolating groove containing single crystalline aluminum wiring
Assignee: Canon Inc
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Filing: 1991-05-29
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Granted: 1993-04-06
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Expires: 2011-05-29
Abstract
Abstract A semiconductor device has a device region, and a device separation region formed on a semiconductor substrate doped with impurities. And, the device separation region has a metal wiring formed on the surface of the device region or the back surface of the substrate. An aluminum region extending in the longitudinal direction connected to the metal wiring is formed within the device separation region.
Inventors
- 👤 Keiji Ishizuka
- 👤 Yuzo Kataoka
- 👤 Toshihiko Ichise
- 👤 Hidekazu Takahashi
- 👤 Hayao Ohzu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:40
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/031; H10W10/30; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
99 words
A semiconductor device comprising: a semiconductor body; a plurality of element regions formed within said semiconductor body; an isolating region for making each of said element regions electrically independent; wherein said isolation region comprises (i) a conductive region formed of single crystalline aluminum filling a groove at one surface side of said body, (ii) a doped region provided on a bottom of said groove and formed of a semiconductor material doped with an impurity to form a pn junction with said element region, and (iii) an insulating region disposed at side surfaces of said groove and said doped region.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising: a semiconductor body; a plurality of element regions formed within said semiconductor body; an isolating region for making each of said element regions electrically independent; wherein said isolation region comprises (i) a conductive region formed of single crystalline aluminum filling a groove at one surface side of said body, (ii) a doped region provided on a bottom of said groove and formed of a semiconductor material doped with an impurity to form a pn junction with said element region, and (iii) an insulating region disposed at side surfaces of said groove and said doped region.
Claim 3
Dependent Claim
82 words
A semiconductor device comprising: a semiconductor body; a plurality of element regions formed within said semiconductor body; and an isolating region for making each of said element regions electrically independent; wherein said isolating region comprises a conductive region formed of single crystalline aluminum filling a groove formed at one surface side of said semiconductor body, a region doped with an impurity disposed on side surfaces and bottom of said groove, and said doped region forms a pn junction with said element region.
Claim 4
Dependent Claim
82 words
A semiconductor device comprising: a semiconductor body; a plurality of element regions formed within said semiconductor body; and an isolating region for making each of said element regions electrically independent; wherein said isolating region comprises a conductive region formed of single crystalline aluminum filling a groove formed at one surface side of said semiconductor body, a region doped with an impurity disposed on side surfaces and bottom of said groove, and said doped region forms a pn junction with said element region.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein said semiconductor device is a solid-state image pick-up device.
Claim 6
Dependent Claim
34 words
A semiconductor device according to claim 1, further comprising at least two functional devices, and comprising a buried metal wiring layer for connecting said at least two functional devices provided within said semiconductor substrate.
Claim 7
Dependent Claim
22 words
A semiconductor device according to claim 4, further comprising at least a first metal wiring layer laminated on said metal wiring layer.
Claim 8
Dependent Claim
23 words
A semiconductor device according to claim 4, wherein said metal wiring layer within said semiconductor substrate is formed of a single crystalline aluminum.
Claim 9
Dependent Claim
36 words
A semiconductor device according to claim 6, wherein said semiconductor substrate and said metal wiring layer within said substrate are electrically separated by a layer region of a conduction type opposite to that of said substrate.
Claim 10
Dependent Claim
15 words
A semiconductor device according to claim 4, wherein said semiconductor device comprises a logic circuit.
Claim 11
Dependent Claim
17 words
A semiconductor device according to claim 2, wherein said semiconductor device is a solid-state image pick-up device.
Claim 12
Dependent Claim
23 words
A semiconductor device according to claim 5, wherein said metal wiring layer within said semiconductor substrate is formed of a single crystalline aluminum.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-05 | 1996-10-05 | 1997-04-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-05 | 2000-10-05 | 2001-04-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-05 | 2004-10-05 | 2005-04-06 | $7700.00 | Window Closed / Lapsed |