Method of forming a static random access memory device

Claim 1

A claim method of forming an oxide film resistor for a static RAM device comprising the steps of: (a) forming an oxide film on a main surface of a semiconductor substrate having a first conductivity; (b) disposing a polycrystalline silicon layer on said oxide film after forming said oxide film in said step (a); (c) patterning said polycrystalline silicon layer in a first specified configuration after disposing said polycrystalline silicon layer in said step (b); (d) disposing a resist layer over said main surface of said semiconductor substrate and said polycrystalline silicon layer after patterning said polycrystalline silicon layer in said step (c); (e) patterning said resist layer in a second specified configuration which includes an opening in a specified region to a portion of said polycrystalline silicon layer after disposing said resist layer in said step (d); (f) ion-implanting silicon or impurities in said semiconductor substrate and said oxide film in the regions which fail to have said resist layer disposed thereon after patterning said resist layer in said step (e).

Claim 4

A method of manufacturing a structure for a static RAM including a plurality of memory cells having load resistors, drive transistors and transfer transistors connected as a flip-flop circuit, comprising the steps of: (a) forming an oxide film on a main surface of a semiconductor substrate having a first conductivity; (b) forming a polycrystalline silicon layer on a surface of said oxide film; (c) patterning said polycrystalline silicon layer in a first specified configuration to form gate electrodes for each of said transfer transistors and upper electrodes connected to each of said load resistors; (d) disposing a resist layer over said main surface of said semiconductor substrate and said polycrystalline silicon layer; (e) patterning said resists layer in a second specified configuration having an opening in a specified region which includes a portion of said upper electrodes; and (f) ion-implanting silicon or impurities in said semiconductor substrate and said oxide film in the regions which fail to have said resist layer disposed thereon; (g) removing said resist layer; and (h) ion-implanting impurities in said semiconductor substrate in the regions which fail to have said gate electrodes and said upper electrodes disposed thereon to form a plurality of impurity regions having a second conductivity.

Claim 5

A method of manufacturing a structure for a static RAM including a plurality of memory cells having load resistors, drive transistors and transfer transistors connected as a flip-flop circuit, comprising the steps of: (a) forming an oxide film on a main surface of a semiconductor substrate having a first conductivity; (b) forming a polycrystalline silicon layer on a surface of said oxide film; (c) patterning said polycrystalline silicon layer in a first specified configuration to form gate electrodes for each of said transfer transistors and upper electrodes connected to each of said load resistors; (d) disposing a resist layer over said main surface of said semiconductor substrate and said polycrystalline silicon layer; (e) patterning said resists layer in a second specified configuration having an opening in a specified region which includes a portion of said upper electrodes; and (f) ion-implanting silicon or impurities in said semiconductor substrate and said oxide film in the regions which fail to have said resist layer disposed thereon; (g) removing said resist layer; and (h) ion-implanting impurities in said semiconductor substrate in the regions which fail to have said gate electrodes and said upper electrodes disposed thereon to form a plurality of impurity regions having a second conductivity.