US4868537A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Doped SiO2 resistor and method of forming same
Assignee: Vishay Siliconix Inc
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Filing: 1987-09-10
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Granted: 1989-09-19
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Expires: 2007-09-10
Abstract
Abstract The concept of enhancing conduction through SiO 2 by implanting ions of cesium (Cs) into the SiO 2 is applied to the formation of a resistor in an integrated circuit. By implanting Cs ions into a layer of SiO 2 in a controlled region of SiO 2 , and making contact to it via metal electrodes or a conductive polysilicon (poly-Si) layer, a resistor is formed. The resistance of the resistor is determined by the geometry chosen and by the implant dose and implant energy or energies.
Inventors
- 👤 Richard A. Blanchard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:09
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C7/00; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/209
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
37 words
A resistor for use in integrated circuits comprising a region of SiO 2 , said SiO 2 containing ions, and conductive electrodes electrically contacting said region of SiO 2 containing ions, wherein said ions are cesium ions.
Claim 2
Dependent Claim
37 words
A resistor for use in integrated circuits comprising a region of SiO 2 , said SiO 2 containing ions, and conductive electrodes electrically contacting said region of SiO 2 containing ions, wherein said ions are cesium ions.
Claim 3
Dependent Claim
24 words
The resistor of claim 1 wherein said SiO 2 containing cesium ions is formed by implanting ions into a region of SiO 2 .
Claim 4
Dependent Claim
40 words
The resistor of claim 1 further comprising conductive polysilicon regions within said region of SiO 2 containing cesium ions wherein said conductive electrodes are in electrical contact with said region of SiO 2 containing cesium ions through said polysilicon regions.
Claim 5
Dependent Claim
39 words
The resistor of claim 1 further comprising polysilicon regions within said region of SiO 2 containing cesium ions, said polysilicon regions acting as etch-stops and said conductive electrodes directly electrically contacting said region of SiO 2 containing cesium ions.
Claim 6
Dependent Claim
30 words
The resistor of claim 3 wherein said region of doped SiO 2 containing cesium ions is overlying a layer of pure SiO 2 which is, in turn, overlying a substrate.
Claim 7
Dependent Claim
30 words
The resistor of claim 4 wherein said region of doped SiO 2 containing cesium ions is overlying a layer of pure SiO 2 which is, in turn, overlying a substrate.
References Cited (Backward Citations)
US3922708A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-18 | 1993-03-20 | 1993-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-18 | 1997-03-20 | 1997-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-18 | 2001-03-20 | 2001-09-19 | $7700.00 | Window Closed / Lapsed |