Semiconductor integrated circuit

Abstract

Abstract PURPOSE: To obtain a resistor having high resistance of 1KΩ∼10 5 MΩ in a semiconductor integrated circuit by forming a diffused region having less than 3μm of one side length within a semiconductor substrate and providing an oxide film controlled in a thermal oxidation time thereon or implanting ion after forming the oxide film. CONSTITUTION: A SiO 2 film 12 is coated on a p-type silicon substrate 11, an opening having less than 3μm at its one side is perforated in a diffused layer forming region, n-type impurity is diffused therein and an n + -type region 13 is thus formed in the substrate 11. Then, the entire surface is thermally oxidized to thereby produce a SiO 2 film 14 having 30∼1000Å thick on the region 13, and polycrystalline silicon film 15 containing impurity becoming conductor is grown by a CVD process thereon. When forming a film 14 becoming a resistor in this configuration, the thermal oxidation time is controlled to thereby determine the resistance value or after forming the film P, As, B, Al, etc. ions are implanted in addition to Si ion to thereby determine desired resistance value. Thus, it can obtain high resistance of 1kΩ∼ 10 5 MΩ adapted for IC. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Hisakazu Iizuka

Bibliographic Details