US5198326A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming fine pattern
Assignee: Panasonic Holdings Corp
•
Filing: 1991-05-03
•
Granted: 1993-03-30
•
Expires: 2011-05-03
Abstract
Abstract In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.
Inventors
- 👤 Kazuhiko Hashimoto
- 👤 Noboru Nomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:35
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; G03F7/038; G03F7/09; G03F7/094; G03F7/20; G03F7/2051; G03F7/2059; Y; Y10; Y10S; Y10S430/00; Y10S430/143; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
145 words
A process for forming a fine pattern, which comprises: a step of forming a high-molecular organic film on a semiconductor substrate, followed by a heat treatment, a step of forming an inorganic film on the resulting high-molecular organic film, followed by a heat treatment, a step of forming, on the resulting inorganic film, a resist film comprising an acid-decomposable polymer, a photo acid generator generating an acid upon irradiation with a charged beam and a conducting polymer, followed by a heat treatment, a step of irradiating the resulting resist film with a charged beam to write a pattern and generate the acid, followed by a heat treatment to react the generated acid with the acid-decomposable polymer, and then effecting development to form a resist pattern, and a step of etching the inorganic film and the high-molecular organic film using the resist pattern as a mask.
Claim 2
Dependent Claim
145 words
A process for forming a fine pattern, which comprises: a step of forming a high-molecular organic film on a semiconductor substrate, followed by a heat treatment, a step of forming an inorganic film on the resulting high-molecular organic film, followed by a heat treatment, a step of forming, on the resulting inorganic film, a resist film comprising an acid-decomposable polymer, a photo acid generator generating an acid upon irradiation with a charged beam and a conducting polymer, followed by a heat treatment, a step of irradiating the resulting resist film with a charged beam to write a pattern and generate the acid, followed by a heat treatment to react the generated acid with the acid-decomposable polymer, and then effecting development to form a resist pattern, and a step of etching the inorganic film and the high-molecular organic film using the resist pattern as a mask.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-29 | 1996-09-28 | 1997-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-29 | 2000-09-28 | 2001-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-29 | 2004-09-28 | 2005-03-30 | $7700.00 | Window Closed / Lapsed |