US5198072A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system
Assignee: Philips Semiconductors Inc
•
Filing: 1990-07-06
•
Granted: 1993-03-30
•
Expires: 2010-07-06
Abstract
Abstract A method for detecting imminent end-point when plasma etching a dielectric layer of a substrate by monitoring the D.C. bias voltage of the cathode during the etching process. The D.C. bias voltage gives an indirect reading of the impedance of the substrate which changes appreciably just prior to etch-through of the dielectric layer. The plasma etching process is then terminated and a less damaging etch process is used to complete the etch-through of the dielectric layer. The apparatus of the present invention includes an A.C. blocking network coupled to the cathode, an A/D converter coupled to the blocking network and a digital signal analyzer coupled to the A/D converter. Plasma etching can be automatically terminated by the signal analyzer upon the detection of imminent end-point.
Inventors
- 👤 Calvin T. Gabriel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:29
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32917; H01J37/32935
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
91 words
A method for detecting imminent end-point of a dielectric etching process in a plasma etch system comprising the steps of: placing a substrate having a dielectric layer to be etched within a plasma etch chamber proximate a cathode; etching said dielectric layer, detecting the direct current (D.C.) bias voltage on said cathode; and determining imminent end-point of said etching of said dielectric layer by comparing a change in said D.C. bias voltage, caused by a change in the impedance of said substrate as said dielectric layer thins, against a predetermined criteria.
Claim 2
Independent Claim
91 words
A method for detecting imminent end-point of a dielectric etching process in a plasma etch system comprising the steps of: placing a substrate having a dielectric layer to be etched within a plasma etch chamber proximate a cathode; etching said dielectric layer, detecting the direct current (D.C.) bias voltage on said cathode; and determining imminent end-point of said etching of said dielectric layer by comparing a change in said D.C. bias voltage, caused by a change in the impedance of said substrate as said dielectric layer thins, against a predetermined criteria.
Claim 3
Dependent Claim
20 words
A method for detecting imminent end-point as recited in claim 1 wherein said predetermined criteria includes a predetermined voltage level.
Claim 4
Dependent Claim
31 words
A method for detecting imminent end-point as recited in claim 1 wherein said step of detecting said D.C bias voltage includes monitoring said D.C. bias voltage over a period of time.
Claim 5
Dependent Claim
20 words
A method for detecting imminent end-point as recited in claim 3 wherein said predetermined criteria includes a predetermined voltage level.
Claim 6
Dependent Claim
24 words
A method for detecting imminent end-point as recited in claim 3 wherein said predetermined criteria includes a time-related change in said D.C. bias voltage.
Claim 7
Dependent Claim
25 words
A method for detecting imminent end-point as recited in claim 5 wherein said time-related change includes a change in slope of said D.C. bias voltage.
Claim 8
Dependent Claim
24 words
A method for detecting imminent end-point as recited in claim 6 wherein said change in slope includes a slope less than a predetermined value.
Claim 9
Dependent Claim
21 words
A method for detecting imminent end-point as recited in claim 6 wherein said change in slope includes a point of inflection.
Claim 10
Independent Claim
121 words
A method for detecting imminent end-point in a dielectric etching process in a plasma etch system comprising the steps of: placing a substrate having a dielectric layer to be etched within a chamber of a plasma etch system between a cathode and anode provided within said chamber; applying radio frequency (R.F.) power to at least one of said cathode and said anode and releasing reactant gas into said chamber to initiate the etching of said dielectric layer; monitoring the direct current (D.C.) bias voltage of said cathode over time; and determining imminent end-point by comparing a change in said D.C. bias voltage, caused by a change in the impedance of said substrate as said dielectric layer thins, against a predetermined criteria.
Claim 11
Independent Claim
121 words
A method for detecting imminent end-point in a dielectric etching process in a plasma etch system comprising the steps of: placing a substrate having a dielectric layer to be etched within a chamber of a plasma etch system between a cathode and anode provided within said chamber; applying radio frequency (R.F.) power to at least one of said cathode and said anode and releasing reactant gas into said chamber to initiate the etching of said dielectric layer; monitoring the direct current (D.C.) bias voltage of said cathode over time; and determining imminent end-point by comparing a change in said D.C. bias voltage, caused by a change in the impedance of said substrate as said dielectric layer thins, against a predetermined criteria.
Claim 12
Dependent Claim
34 words
A method for detecting imminent end-point as recited in claim 9 wherein said plasma etch system is operative in a reactive ion etch (RIE) mode where R.F. power is not applied to said anode.
Claim 13
Dependent Claim
42 words
A method for detecting imminent end-point as recited in claim 9 wherein said step of monitoring said D.C. bias voltage includes digitizing said D.C. bias voltage and wherein said step of determining imminent end-point includes digitally analyzing said digitized D.C. bias voltage.
Claim 14
Dependent Claim
30 words
A method for detecting imminent end-point as recited in claim 11 further comprising the step of removing R.F. power from said cathode when it is determined that end-point is imminent.
Claim 15
Dependent Claim
147 words
A dielectric etching apparatus comprising: a chamber; cathode means for supporting a substrate within said chamber, said substrate having a dielectric layer to be etched; anode means separated from said cathode means such that said substrate is between said anode means and said cathode means; radio frequency (RF) power means coupled to at least one of said cathode means and said anode means; reactant gas release means for releasing dielectric etching gas into said chamber; voltage monitoring means coupled to said cathode means and operative to produce a direct current (D.C.) bias signal which varies with the thickness of said dielectric layer; and voltage comparison means coupled to said voltage monitoring means for forming a first time derivative of said D.C. bias signal and for producing an imminent end-point signal prior to actual end-point of the dielectric etching process if this time derivative satisfies a predetermined criterion.
Claim 16
Dependent Claim
147 words
A dielectric etching apparatus comprising: a chamber; cathode means for supporting a substrate within said chamber, said substrate having a dielectric layer to be etched; anode means separated from said cathode means such that said substrate is between said anode means and said cathode means; radio frequency (RF) power means coupled to at least one of said cathode means and said anode means; reactant gas release means for releasing dielectric etching gas into said chamber; voltage monitoring means coupled to said cathode means and operative to produce a direct current (D.C.) bias signal which varies with the thickness of said dielectric layer; and voltage comparison means coupled to said voltage monitoring means for forming a first time derivative of said D.C. bias signal and for producing an imminent end-point signal prior to actual end-point of the dielectric etching process if this time derivative satisfies a predetermined criterion.
Claim 17
Dependent Claim
57 words
An apparatus for detecting imminent end-point as recited in claim 13 wherein said voltage monitoring means includes an alternating current (A.C.) blocking network, which substantially attenuates A.C. current but which substantially passes direct current (D.C.), coupled to said cathode and an analog-to-digital (A/D) converter coupled to said A.C. blocking network, wherein said D.C. bias signal is digital.
Claim 18
Dependent Claim
33 words
An apparatus for detecting imminent end-point as recited in claim 14 wherein said voltage comparison means includes a digital processor, wherein said digital D.C. bias signal comprises an input to said digital processor.
Claim 19
Dependent Claim
41 words
An apparatus for detecting imminent end-point as recited in claim 13 wherein an anode of said plasma etch system is not coupled to an R.F. power source such that said plasma etch system operates in a reactive ion etch (RIE) mode.
Claim 20
Dependent Claim
24 words
An apparatus for detecting imminent end-point as recited in claim 13, further comprising means for removing R.F. power in response to said end-point signal.
Claim 21
Independent Claim
76 words
A method for controlling an etching process when plasma etching a dielectric layer comprising the steps of: placing a substrate having a dielectric layer to be etched within a plasma etch chamber; etching said dielectric layer; monitoring a change in impedance of said substrate as said dielectric layer is etched; and terminating said etching process prior to the etch-through of said dielectric layer by comparing said change in impedance of said substrate against a predetermined criteria.
Claim 22
Independent Claim
76 words
A method for controlling an etching process when plasma etching a dielectric layer comprising the steps of: placing a substrate having a dielectric layer to be etched within a plasma etch chamber; etching said dielectric layer; monitoring a change in impedance of said substrate as said dielectric layer is etched; and terminating said etching process prior to the etch-through of said dielectric layer by comparing said change in impedance of said substrate against a predetermined criteria.
Claim 23
Independent Claim
56 words
An apparatus for determining imminent end-point when etching a dielectric layer in a plasma etching system comprising: monitoring means for monitoring the change in impedance of a substrate having a dielectric layer as said dielectric layer is being etched; and comparison means for comparing said change in impedance against a predetermined criteria to determine imminent end-point.
Claim 24
Independent Claim
56 words
An apparatus for determining imminent end-point when etching a dielectric layer in a plasma etching system comprising: monitoring means for monitoring the change in impedance of a substrate having a dielectric layer as said dielectric layer is being etched; and comparison means for comparing said change in impedance against a predetermined criteria to determine imminent end-point.
Claim 25
Dependent Claim
36 words
An apparatus for detecting imminent end-point as recited in claim 13, wherein said predetermined criterion is that the magnitude of said first time derivative of said D.C. bias voltage be less than a selected positive number.
References Cited (Backward Citations)
US4341593A
Cited
JPS5879722A
Cited
JPS5941475A
Cited
US4566941A
Cited
US4622094A
Cited
US4602981A
Cited
JPS63128718A
Cited
US4936967A
Cited
US4810335A
Cited
US5016663A
Cited
US4846920A
Cited
US4960610A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-29 | 1996-09-28 | 1997-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-29 | 2000-09-28 | 2001-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-29 | 2004-09-28 | 2005-03-30 | $7700.00 | Window Closed / Lapsed |