US5196723A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit screen arrangement and a method for its manufacture
Assignee: Infineon Technologies AG
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Filing: 1991-04-04
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Granted: 1993-03-23
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Expires: 2011-04-04
Abstract
Abstract An integrated semiconductor circuit includes a substrate, an epitaxial layer having transistor base regions, a first and a second (11) insulating oxide layer, and a protective layer. The first oxide layer carries heavily doped polycrystalline layers, including an electric contact layer, a screening layer and a connecting layer. The connecting layer electrically connects the screening layer to the epitaxial layer, through the electric contact layer. The screening layer prevents the occurrence of inversion and parasite components in the epitaxial layer between the base regions. The polycrystalline layer arrangement is simple and can be produced in a common process step. The arrangement is able to withstand high temperatures and enables the second insulating layer to be readily applied.
Inventors
- 👤 Bo S. Andersson
- 👤 Hans T. Lind
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 18:55
CPC Classifications
H; H10; H10W; H10W42/00; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/206; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
199 words
An integrated circuit screen arrangement comprising a semiconductor layer which is doped with ions of a desired polarity, a plurality of mutually spaced component regions in the semiconductor layer surface, of which at least two regions are doped with ions of polarity opposite to the desired polarity, a first insulating semiconductor oxide layer on the semiconductor layer having cut-outs for electric connection to the semiconductor layer, and a plurality of layers of polycrystalline semiconductor material disposed on the semiconductor oxide layer, wherein the polycrystalline semiconductor material layers include an electric contact layer which is heavily doped with ions of the desired polarity and which extends in the cut-outs for electrical connection; a screen layer which is heavily doped with ions of the desired polarity, said screen layer extending in a region between the aforesaid at least two component regions; and a connecting layer which is heavily doped with ions of the desired polarity and which extends between the electric contact layer and the screen layer and connects these layers together electrically, wherein the screen layer screens electrically a region in the semiconductor layer against the influence of a non-desired electrical potential on an upper surface of the integrated circuit.
Claim 2
Dependent Claim
199 words
An integrated circuit screen arrangement comprising a semiconductor layer which is doped with ions of a desired polarity, a plurality of mutually spaced component regions in the semiconductor layer surface, of which at least two regions are doped with ions of polarity opposite to the desired polarity, a first insulating semiconductor oxide layer on the semiconductor layer having cut-outs for electric connection to the semiconductor layer, and a plurality of layers of polycrystalline semiconductor material disposed on the semiconductor oxide layer, wherein the polycrystalline semiconductor material layers include an electric contact layer which is heavily doped with ions of the desired polarity and which extends in the cut-outs for electrical connection; a screen layer which is heavily doped with ions of the desired polarity, said screen layer extending in a region between the aforesaid at least two component regions; and a connecting layer which is heavily doped with ions of the desired polarity and which extends between the electric contact layer and the screen layer and connects these layers together electrically, wherein the screen layer screens electrically a region in the semiconductor layer against the influence of a non-desired electrical potential on an upper surface of the integrated circuit.
Claim 3
Dependent Claim
46 words
An arrangement according to claim 1, wherein the plurality of layers of polycrystalline semiconductor material further include at least one resistance layer which is doped with ions of the desired polarity to a desired doping degree and which forms an electric resistor of the integrated circuit.
Claim 4
Dependent Claim
46 words
An arrangement according to claim 1, wherein the plurality of layers of polycrystalline semiconductor material further include at least one capacitor layer which is heavily doped with ions of the desired polarity and which forms an electrically conductive coating of a capacitor of the integrated circuit.
Claim 5
Dependent Claim
34 words
An arrangement according to claim 1, wherein the plurality of layers of polycrystalline semiconductor material form parts of a common polycrystalline semiconductor layer which has been disposed on the first insulating semiconductor oxide layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-22 | 1996-09-21 | 1997-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-22 | 2000-09-21 | 2001-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-22 | 2004-09-21 | 2005-03-23 | $7700.00 | Window Closed / Lapsed |