Abstract A heterostructure field effect transistor having a buffer layer comprising a first compound semiconductor material. A layer of second semiconductor material different from the first material is formed over the buffer layer. The second layer has a total thickness less than 250 Å. A doped third semiconductor layer formed over the second layer. The net has a dopant concentration in the second layer is greater than the net dopant concentration in the third layer. A gate layer is positioned over the third layer. In a preferred embodiment the second layer is a pulse-doped pseudomorphic material. There is also provided a method for making the heterostructure field effect transistor. A doped pseudomorphic semiconductor layer of a first conductivity type is formed between first and second other semiconductor layers, the second layer including a net dopant concentration of the first conductivity type. A Schottky gate electrode is formed in contact with the second layer.
A method for making a field effect transistor comprising the steps of: forming a doped pseudomorphic semiconductor channel layer of a first conductivity type between first and second other semiconductor layers, the second layer including a net dopant concentration of the first conductivity type; and forming a Schottky gate electrode in contact with the second layer.
Claim 2
Independent Claim
56 words
A method for making a field effect transistor comprising the steps of: forming a doped pseudomorphic semiconductor channel layer of a first conductivity type between first and second other semiconductor layers, the second layer including a net dopant concentration of the first conductivity type; and forming a Schottky gate electrode in contact with the second layer.
Claim 3
Dependent Claim
11 words
The method of claim 1 wherein the first layer is undoped.
Claim 4
Dependent Claim
72 words
The method of claim 1 further comprising the step of forming a third semiconductor layer over the second layer the third layer including a net dopant concentration of the first conductivity type which is greater than the net dopant concentration in the second layer, the step of forming the gate electrode including the step of forming a recess through the third layer to electrically isolate the gate electrode from the third layer.
Claim 5
Dependent Claim
16 words
The method of claim 3 wherein the gate electrode is formed as a double recessed gate.
Claim 6
Dependent Claim
22 words
The method of claim 1 wherein the pseudomorphic layer is formed of a material having higher mobility characteristics than the second layer.
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein the pseudomorphic layer comprises In X Ga.sub.(1-X) As doped with silicon.
Claim 8
Dependent Claim
14 words
The method of claim 6 wherein X is greater than or equal to 0.15.
Claim 9
Dependent Claim
26 words
The method of claim 1 wherein the pseudomorphic layer is an epitaxially formed multilayer structure comprising a pulse doped mid layer and substantially undoped outer layers.
Claim 10
Dependent Claim
32 words
The method of claim 1 wherein the first layer comprises undoped GaAs, the second layer comprises doped GaAs and the pseudomorphic layer comprises heavily doped InGaAs to provide a pseudomorphic quantum well.
Claim 11
Dependent Claim
17 words
The method of claim 1 wherein the pseudomorphic layer is formed with a substantially uniform dopant distribution.