Method of manufacturing a contact structure for a semiconductor device

Claim 1

A method of manufacturing a contact structure for a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a silicide layer on a surface of the semiconductor substrate; forming a thin oxide layer on the silicide layer incidentally; forming a polycrystalline silicon layer on the thin oxide layer; introducing an impurity into the polycrystalline silicon layer; and subjecting the structure obtained by the above steps to a rapid annealing heat treatment at a temperature above about 900° C. to cause the thin oxide layer to flow viscously into valley portions of grain boundaries of the silicide layer so that the silicide layer forms an ohmic contact with the polycrystalline silicon layer.

Claim 2

A method of manufacturing a contact structure for a semiconductor device comprising the steps of: providing a semiconductor substrate; forming a silicide layer on a surface of the semiconductor substrate; forming a thin oxide layer on the silicide layer incidentally; forming a polycrystalline silicon layer on the thin oxide layer; introducing an impurity into the polycrystalline silicon layer; and subjecting the structure obtained by the above steps to a rapid annealing heat treatment at a temperature above about 900° C. to cause the thin oxide layer to flow viscously into valley portions of grain boundaries of the silicide layer so that the silicide layer forms an ohmic contact with the polycrystalline silicon layer.

Claim 8

A method of manufacturing a contact structure for a semiconductor device comprising the steps of: providing a semiconductor substrate having an isolation oxide layer on its surface; forming a silicide layer on at least a portion of the surface of the isolation oxide layer; forming a thin oxide layer of a thickness of about 50-100 Å on the silicide layer incidentally; forming an insulating layer on the thin oxide layer, with the insulating layer having a contact hole which exposes a part of the oxide layer; depositing polycrystalline silicon onto the exposed oxide layer within the contact hole; and producing an ohmic contact between the silicide layer and the polycrystalline silicon layer by subjecting the structure obtained by the above steps to a rapid annealing heat treatment at a temperature above about 900° C. to cause the thin oxide layer to flow viscously into valley portions of grain boundaries of the silicide layer.

Claim 9

A method of manufacturing a contact structure for a semiconductor device comprising the steps of: providing a semiconductor substrate having an isolation oxide layer on its surface; forming a silicide layer on at least a portion of the surface of the isolation oxide layer; forming a thin oxide layer of a thickness of about 50-100 Å on the silicide layer incidentally; forming an insulating layer on the thin oxide layer, with the insulating layer having a contact hole which exposes a part of the oxide layer; depositing polycrystalline silicon onto the exposed oxide layer within the contact hole; and producing an ohmic contact between the silicide layer and the polycrystalline silicon layer by subjecting the structure obtained by the above steps to a rapid annealing heat treatment at a temperature above about 900° C. to cause the thin oxide layer to flow viscously into valley portions of grain boundaries of the silicide layer.

Claim 16

A method of manufacturing a contact structure for a semiconductor device comprising the steps of: providing a semiconductor substrate having an isolation oxide layer on its surface; forming a silicide layer on at least a portion of the surface of the isolation oxide layer; forming an insulating layer on the silicide layer, with the insulating layer having a contact hole which exposes a part of the silicide layer; depositing polycrystalline silicon onto the exposed silicide layer within the contact hole, which incidentally forming a thin oxide layer of a thickness of 50-100 Å on the surface of the exposed silicide layer; and subjecting the structure obtained by the above steps to a rapid annealing heat treatment at a temperature above about 900° C. for about 10 seconds to cause viscous flow of the oxide of the thin oxide layer and the silicide layer to directly and ohmically contact the deposited polycrystalline silicon.

Claim 17

A method of manufacturing a contact structure for a semiconductor device comprising the steps of: providing a semiconductor substrate having an isolation oxide layer on its surface; forming a silicide layer on at least a portion of the surface of the isolation oxide layer; forming an insulating layer on the silicide layer, with the insulating layer having a contact hole which exposes a part of the silicide layer; depositing polycrystalline silicon onto the exposed silicide layer within the contact hole, which incidentally forming a thin oxide layer of a thickness of 50-100 Å on the surface of the exposed silicide layer; and subjecting the structure obtained by the above steps to a rapid annealing heat treatment at a temperature above about 900° C. for about 10 seconds to cause viscous flow of the oxide of the thin oxide layer and the silicide layer to directly and ohmically contact the deposited polycrystalline silicon.