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US5189593A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated distributed resistive-capacitive network

Assignee: Motorola Solutions Inc
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Filing: 1991-11-04
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Granted: 1993-02-23
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Expires: 2011-11-04
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Abstract

Abstract An integrated-distributed-resistive-capacitive network (100) having a high dielectric electronically-tunable semiconductor integrated capacitor. The network (100) also includes a resistive layer (126) formed on the high dielectric semiconductor integrated capacitor, to provide the distributed resistance of the network (100). External contact to the resistive portion of the network (100) is provided via a plurality of contact terminals (122A and 122B) which are coupled to the resistive layer (126).

Inventors

  • 👤 Leng H. Ooi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 22:11
CPC Classifications
H; H10; H10D; H10D88/00; H03; H03H; H03H1/00; H03H1/02; H10D1/00; H10D1/60; H10D1/62; H10D1/66

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 80 words
An integrated-distributed-resistive-capacitive network, comprising: a high dielectric electronically-tunable Zirconium Titanate integrated capacitor, comprising: a semiconductor having a layer of semi-conductive material of a higher resistivity than the semiconductor; a depletion layer formed in the high resistivity layer; an insulating layer of Zirconium Titanate formed on the high resistivity layer; a conductive electrode formed on the dielectric layer; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of electrical contact terminals coupled to the resistive layer.
Claim 2
Dependent Claim 80 words
An integrated-distributed-resistive-capacitive network, comprising: a high dielectric electronically-tunable Zirconium Titanate integrated capacitor, comprising: a semiconductor having a layer of semi-conductive material of a higher resistivity than the semiconductor; a depletion layer formed in the high resistivity layer; an insulating layer of Zirconium Titanate formed on the high resistivity layer; a conductive electrode formed on the dielectric layer; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of electrical contact terminals coupled to the resistive layer.
Claim 3
Dependent Claim 86 words
An integrated-distributed-resistive-capacitive network, comprising: a high dielectric electronically-tunable semiconductor integrated capacitor, comprising: a semiconductor having a layer of semi-conductive material of a higher resistivity than the semiconductor; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, the insulating layer having a dielectric constant greater than 16; an conductive electrode formed on the dielectric layer; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of electrical contact terminals coupled to the resistive layer.
Claim 4
Dependent Claim 86 words
An integrated-distributed-resistive-capacitive network, comprising: a high dielectric electronically-tunable semiconductor integrated capacitor, comprising: a semiconductor having a layer of semi-conductive material of a higher resistivity than the semiconductor; a depletion layer formed in the high resistivity layer; an insulating layer formed on the high resistivity layer, the insulating layer having a dielectric constant greater than 16; an conductive electrode formed on the dielectric layer; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of electrical contact terminals coupled to the resistive layer.
Claim 5
Dependent Claim 66 words
An integrated distributed resistive-capacitive network having a control input, a common line and two signal lines, comprising: a Zirconium Titanate integrated capacitor; having a control-line plate coupled to the control input and a first contact plate coupled to the common line; a resistive layer formed over the integrated capacitor; and a plurality of contact terminals coupled to the resistive layer and providing the two signal lines.
Claim 6
Dependent Claim 66 words
An integrated distributed resistive-capacitive network having a control input, a common line and two signal lines, comprising: a Zirconium Titanate integrated capacitor; having a control-line plate coupled to the control input and a first contact plate coupled to the common line; a resistive layer formed over the integrated capacitor; and a plurality of contact terminals coupled to the resistive layer and providing the two signal lines.
Claim 7
Dependent Claim 56 words
A communication device, comprising: receiver means for receiving radio communication signals, the means for receiving having at least one integrated electronically tunable distributed resistive-capacitive network, the integrated network including: a Zirconium Titanate integrated capacitor; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of contact terminals coupled to the resistive layer.
Claim 8
Dependent Claim 56 words
A communication device, comprising: receiver means for receiving radio communication signals, the means for receiving having at least one integrated electronically tunable distributed resistive-capacitive network, the integrated network including: a Zirconium Titanate integrated capacitor; a resistive layer formed on the high dielectric semiconductor integrated capacitor; and a plurality of contact terminals coupled to the resistive layer.

References Cited (Backward Citations)

US3727154A Cited
US3819990A Cited
US5028894A Cited
US4987459A Cited
US5060110A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-02-23 1996-08-24 1997-02-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-02-23 2000-08-24 2001-02-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-02-23 2004-08-24 2005-02-23 $7700.00 Window Closed / Lapsed

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