US5060110A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency MOSCAP
Assignee: Motorola Solutions Inc
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Filing: 1990-08-29
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Granted: 1991-10-22
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Expires: 2010-08-29
Abstract
Abstract A MOSCAP that includes a semiconductor layer (103) having gold impurities sufficient to increase the density of deep recombination traps in the semiconductor bandgap. During operation of the MOSCAP in high frequency, reverse bias operating conditions, these deep recombination traps will facilitate formation of an inversion layer that will maintain relatively stable capacitive characteristics for the resultant MOSCAP.
Inventors
- 👤 Robert C. Kane
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:31
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D1/00; H10D1/60; H10D1/62; H10D1/66; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/917; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
71 words
A capacitor comprising: A) a semiconductor layer having a characteristic band-gap, and further including at least one preselected impurity, which impurity has an energy level corresponding to an energy residing near the middle of the band-gap; B) a conductor layer; and C) a dielectric layer disposed between the semiconductor layer and the conductor layer; such that the capacitor will exhibit a substantially stable capacitance when used in a high frequency application.
Claim 2
Dependent Claim
71 words
A capacitor comprising: A) a semiconductor layer having a characteristic band-gap, and further including at least one preselected impurity, which impurity has an energy level corresponding to an energy residing near the middle of the band-gap; B) a conductor layer; and C) a dielectric layer disposed between the semiconductor layer and the conductor layer; such that the capacitor will exhibit a substantially stable capacitance when used in a high frequency application.
Claim 3
Dependent Claim
10 words
The capacitor of claim 1, wherein the impurity comprises gold.
Claim 4
Dependent Claim
31 words
The capacitor of claim 1, wherein the impurity has a density within at least a part of the semiconductor layer on the order of at least 1×10 14 atoms/cm 2 .
Claim 5
Dependent Claim
86 words
A capacitor comprising: A) a semiconductor layer having a characteristic band-gap, and further including at least one preselected impurity, which impurity is present within the semiconductor layer in a quantity sufficient to support formation of an inversion layer in the semiconductor layer when the capacitor operates during reverse bias/high frequency conditions; B) a conductor layer; and C) a dielectric layer disposed between the semiconductor layer and the conductor layer; such that the capacitor will exhibit a substantially stable capacitance when used in a high frequency application.
Claim 6
Dependent Claim
86 words
A capacitor comprising: A) a semiconductor layer having a characteristic band-gap, and further including at least one preselected impurity, which impurity is present within the semiconductor layer in a quantity sufficient to support formation of an inversion layer in the semiconductor layer when the capacitor operates during reverse bias/high frequency conditions; B) a conductor layer; and C) a dielectric layer disposed between the semiconductor layer and the conductor layer; such that the capacitor will exhibit a substantially stable capacitance when used in a high frequency application.
Claim 7
Dependent Claim
23 words
The capacitor of claim 4 wherein the impurity has an energy level corresponding to an energy residing near the middle of the band-gap.
Claim 8
Dependent Claim
10 words
The capacitor of claim 4, wherein the impurity comprises gold.
Claim 9
Dependent Claim
31 words
The capacitor of claim 4, wherein the impurity has a density within at least a part of the semiconductor layer on the order of at least 1×10 14 atoms/cm 2 .
Claim 10
Independent Claim
66 words
A method of forming a capacitor, comprising the steps of: A) providing a semiconductor material having a characteristic band-gap; B) incorporating at least one preselected impurity into the semiconductor material, which impurity has an energy level corresponding to an energy residing near the middle of the band-gap; C) disposing a dielectric layer proximal to the semiconductor material; D) disposing a conductive layer on the dielectric layer.
Claim 11
Independent Claim
66 words
A method of forming a capacitor, comprising the steps of: A) providing a semiconductor material having a characteristic band-gap; B) incorporating at least one preselected impurity into the semiconductor material, which impurity has an energy level corresponding to an energy residing near the middle of the band-gap; C) disposing a dielectric layer proximal to the semiconductor material; D) disposing a conductive layer on the dielectric layer.
Claim 12
Dependent Claim
44 words
The method of claim 8, wherein the step of incorporating the impurity includes providing the impurity in a quantity sufficient to provide a density within at least a part of the semiconductor material on the order of at least 1×10 14 atoms/cm 2 .
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-21 | 1995-04-22 | 1995-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-21 | 1999-04-22 | 1999-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-21 | 2003-04-22 | 2003-10-22 | $7700.00 | Window Closed / Lapsed |