Patent US5189504A successfully refreshed from Google Patents.
US5189504A
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US
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Semiconductor device of MOS structure having p-type gate electrode
Assignee: NTT Inc
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Filing: 1992-01-30
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Granted: 1993-02-23
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Expires: 2012-01-30
Abstract
Abstract A semiconductor device of a MOS structure having a p-type gate electrode has a gate electrode including at least two layers consisting of a boron-doped polysilicon layer and a polysilicon layer doped with boron and an inert material. This inert material is nitrogen or carbon.
Inventors
- 👤 Satoshi Nakayama
- 👤 Tetsushi Sakai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:14
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/01314; H10D64/60; H10D64/66; H10D64/661; H10D64/662; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
72 words
A semiconductor device of a MOS structure having a p-type gate electrode, wherein said gate electrode comprises a first layer of polysilicon doped with a constant concentration of carbon inert material and boron, wherein said first layer of polysilicon is formed on a MOS gate oxide film and a second layer of boron-doped polysilicon is formed over the entirety of said first layer of polysilicon doped with carbon inert material and boron.
Claim 2
Dependent Claim
72 words
A semiconductor device of a MOS structure having a p-type gate electrode, wherein said gate electrode comprises a first layer of polysilicon doped with a constant concentration of carbon inert material and boron, wherein said first layer of polysilicon is formed on a MOS gate oxide film and a second layer of boron-doped polysilicon is formed over the entirety of said first layer of polysilicon doped with carbon inert material and boron.
Claim 3
Dependent Claim
26 words
The semiconductor device according to claim 1, wherein said constant concentration of said carbon inert material is within the range of 1 atm% to 5 atm%.
Claim 4
Dependent Claim
72 words
A semiconductor device of a MOS structure having a p-type gate electrode, wherein said gate electrode comprises a first layer of polysilicon doped with a constant concentration of nitrogen inert material and boron, wherein said first layer of polysilicon if formed on a MOS gate oxide film and a second layer of boron-doped polysilicon is formed over the entirely of said first layer of polysilicon doped with nitrogen inert material and boron.
Claim 5
Dependent Claim
72 words
A semiconductor device of a MOS structure having a p-type gate electrode, wherein said gate electrode comprises a first layer of polysilicon doped with a constant concentration of nitrogen inert material and boron, wherein said first layer of polysilicon if formed on a MOS gate oxide film and a second layer of boron-doped polysilicon is formed over the entirely of said first layer of polysilicon doped with nitrogen inert material and boron.
Claim 6
Dependent Claim
28 words
The semiconductor device according to claim 3, wherein said constant concentration of said nitrogen inert material is within the range of 1 atm % to 5 atm %.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-23 | 1996-08-24 | 1997-02-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-23 | 2000-08-24 | 2001-02-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-23 | 2004-08-24 | 2005-02-23 | $7700.00 | Window Closed / Lapsed |