Method of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth step

Claim 1

A method of manufacturing a semiconductor device, comprising the steps of: forming an insulative film on a semiconductor substrate of said device; forming a hole in said insulative film; performing selective vapor growth to form a conductive layer in said hole on said semiconductor substrate; and removing silicon particles from said semiconductor substrate by polishing a substantially entire surface of said insulating film formed on said semiconductor substrate subsequent to the selective vapor growth to produce a reduction in thickness of the insulating film of 0.05 micron maximum, the polishing being performed by using cloths containing an alkaline solution having silicon oxides particles dissolved therein.

Claim 2

A method of manufacturing a semiconductor device, comprising the steps of: forming an insulative film on a semiconductor substrate of said device; forming a hole in said insulative film; performing selective vapor growth to form a conductive layer in said hole on said semiconductor substrate; and removing silicon particles from said semiconductor substrate by polishing a substantially entire surface of said insulating film formed on said semiconductor substrate subsequent to the selective vapor growth to produce a reduction in thickness of the insulating film of 0.05 micron maximum, the polishing being performed by using cloths containing an alkaline solution having silicon oxides particles dissolved therein.

Claim 10

A method of manufacturing a semiconductor device, comprising the steps of: forming an insulative film on a semiconductor substrate of said device; forming a hole in said insulative film; performing selective vapor growth to form a conductive layer in said hole on said semiconductor substrate; removing silicon particles from said semiconductor substrate by polishing a substantially entire surface of said insulating film formed on said semiconductor substrate subsequent to the selective vapor growth to produce a reduction in thickness of the insulating film of 0.05 micron maximum, the polishing being performed by using cloths containing an alkaline solution having silicon oxide particles dissolved therein; and rinsing said semiconductor substrate subsequent to said polishing step.

Claim 11

A method of manufacturing a semiconductor device, comprising the steps of: forming an insulative film on a semiconductor substrate of said device; forming a hole in said insulative film; performing selective vapor growth to form a conductive layer in said hole on said semiconductor substrate; removing silicon particles from said semiconductor substrate by polishing a substantially entire surface of said insulating film formed on said semiconductor substrate subsequent to the selective vapor growth to produce a reduction in thickness of the insulating film of 0.05 micron maximum, the polishing being performed by using cloths containing an alkaline solution having silicon oxide particles dissolved therein; and rinsing said semiconductor substrate subsequent to said polishing step.