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US5187553A
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Avalanche photodiode having a thin multilayer superlattice structure sandwiched between barrier and well layers to reduce energy loss
Assignee: NEC Corp
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Filing: 1991-04-18
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Granted: 1993-02-16
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Expires: 2011-04-18
Abstract
Abstract An avalanche photodiode includes an avalanche multiplication layer consisting of a superlattice multilayer structure in which a repeated thin multilayer of short-width well layers and short-width barrier layers is sandwiched between a well layer and a barrier layer. The width of the short-width well and barrier layers is preferably up to 100 Å. In such a structure, an ionization rate of electrons in the avalanche multiplication layer increases, so that the avalanche photodiode has low-noise and high speed response performances.
Inventors
- 👤 Kikuo Makita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 02:27
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/225; H10F30/2255; H10F77/00; H10F77/10; H10F77/14; H10F77/146
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
100 words
AN avalanche photodiode, comprising: a first semiconductor layer for a light absorbing layer; a second semiconductor layer for an avalanche multiplication layer, said second semiconductor layer comprising a superlattice multilayer structure in which each element layer consisting of alternately provided short-width well and barrier layers is sandwiched between a well layer and a barrier layer, wherein both said short-width well and barrier layers have a thickness of up to 100 Å; and first and second electrodes coupled to said avalanche photodiode for applying a predetermined voltage across a region of said avalanche photodiode including said first and second semiconductor layers.
Claim 2
Dependent Claim
100 words
AN avalanche photodiode, comprising: a first semiconductor layer for a light absorbing layer; a second semiconductor layer for an avalanche multiplication layer, said second semiconductor layer comprising a superlattice multilayer structure in which each element layer consisting of alternately provided short-width well and barrier layers is sandwiched between a well layer and a barrier layer, wherein both said short-width well and barrier layers have a thickness of up to 100 Å; and first and second electrodes coupled to said avalanche photodiode for applying a predetermined voltage across a region of said avalanche photodiode including said first and second semiconductor layers.
Claim 3
Dependent Claim
34 words
An avalanche photodiode, according to claim 1, wherein: a thickness of said short-width well layer becomes larger as the distance from said well layer becomes smaller, and becomes smaller as said distance becomes larger.
Claim 4
Dependent Claim
24 words
An avalanche photodiode, according to claim 1, wherein: said short-width well layer consists of InGaAs , and said short-width barrier layer consists of InAlAs.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-16 | 1996-08-17 | 1997-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-16 | 2000-08-17 | 2001-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-16 | 2004-08-17 | 2005-02-16 | $7700.00 | Window Closed / Lapsed |