Avalanche photodiode

Abstract

Abstract PURPOSE:To obtain a photodiode which prevents a responsitivity from being deteriorated by a trapping effect at a heterointerface in a superlattice APD, whose noise can be reduced and which can be manufactured easily by a method wherein third specific semiconductors are arranged, under a specific condition, in a multiplication layer composed of a superlattice where first semiconductors and second semiconductors have been laminated alternately. CONSTITUTION:In an avalanche photodiode, a superlattice where first semiconductors 11, with a thickness of d1, and second semiconductors 12, with a thickness of d2, having a band gap smaller than that of the first semiconductors have been laminated alternately is used as a multiplication layer 7. In this photodiode, third semiconductors 13, with a thickness of d3, having a band gap larger than that of the second semiconductors 12 are arranged between the first semiconductors 11 and the second semiconductors 12 under conditions of d3<d1 and d3+a<d2/2 in such a way that they are separated from the first semiconductors 11 by a prescribed interval (a). For example, an undoped InGaAs/InAlAs superlattice multiplication layer 7 is constituted by repeating a multilayer structure composed of an In0.52Al0.48As layer (d1=300Angstrom )11, an In0.53Ga0.47As layer (d2=300Angstrom )12, an In0.52Al0.48As layer (d3=30Angstrom )13 and an In0.53 Ga0.47As layer (d3=30Angstrom )14 as shown in the figure.

Inventors

• 👤 Toshiaki Kagawa
• 👤 香川　俊明

Bibliographic Details