BIMOS voltage bias with low temperature coefficient

Claim 2

A BiMOS voltage bias circuit, comprising: a biasing network to provide a biasing voltage, said biasing network including a voltage divider and a MOS transistor connected in series, said voltage divider having two resistors and a tapped junction between said two resistors, said MOS transistor having a temperature coefficient and a gate electrode connected to a reference voltage for switching said MOS transistor normally ON; a bipolar transistor voltage amplifier having a base-emitter junction voltage having a temperature coefficient that is opposite from that of said MOS transistor of said biasing network, said bipolar transistor voltage amplifier having an output node and having its base electrode connected to said tapped junction of said biasing network to receive said biasing voltage, wherein said output node provides a voltage equal to said biasing voltage minus said base-emitter voltage to result in an overall low temperature coefficient for providing a constant output voltage for said amplifier over a predetermined temperature range, and first resistive means for providing said constant output voltage, said first resistive means connected to the output node of said bipolar voltage transistor amplifier.

Claim 3

The BiMOS voltage bias circuit of claim 1 wherein said MOS transistor is a P-MOS transistor.

Claim 4

The BiMOS voltage bias circuit of claim 2 wherein said voltage divider comprises a resistor having a first end and a second end, said first end being connected to a drain electrode of said P-MOS transistor and said second end being connected to said base electrode of said bipolar transistor voltage amplifier at said tapped junction.

Claim 5

The BiMOS voltage bias circuit of claim 3 wherein said bipolar transistor voltage amplifier comprises an NPN bipolar transistor.

Claim 6

An integrated BiMOS voltage bias circuit with a low temperature coefficient, comprising: a substrate; a biasing network formed on said substrate to provide a biasing voltage, said biasing network including a voltage divider and a MOS transistor connected in series, said voltage divider having two resistors and a tapped junction between said two resistors, said MOS transistor having a temperature coefficient and a gate electrode connected to a reference voltage for switching said MOS transistor normally ON; a bipolar transistor voltage amplifier formed on said substrate, having a base-emitter junction voltage having a temperature coefficient that is opposite from that of said MOS transistor of said biasing network, said bipolar transistor voltage amplifier having an output node and having its base electrode connected to said tapped junction of said biasing network to receive said biasing voltage, wherein said output node provides a voltage equal to said biasing voltage minus said base-emitter voltage for providing an overall low temperature coefficient to result in a constant output voltage for said amplifier over a predetermined temperature range, and first resistive means for providing said constant output voltage, said first resistive means connected to the output node of said bipolar voltage transistor amplifier.

Claim 7

An integrated BiMOS voltage bias circuit with a low temperature coefficient, comprising: a substrate; a biasing network formed on said substrate to provide a biasing voltage, said biasing network including a voltage divider and a MOS transistor connected in series, said voltage divider having two resistors and a tapped junction between said two resistors, said MOS transistor having a temperature coefficient and a gate electrode connected to a reference voltage for switching said MOS transistor normally ON; a bipolar transistor voltage amplifier formed on said substrate, having a base-emitter junction voltage having a temperature coefficient that is opposite from that of said MOS transistor of said biasing network, said bipolar transistor voltage amplifier having an output node and having its base electrode connected to said tapped junction of said biasing network to receive said biasing voltage, wherein said output node provides a voltage equal to said biasing voltage minus said base-emitter voltage for providing an overall low temperature coefficient to result in a constant output voltage for said amplifier over a predetermined temperature range, and first resistive means for providing said constant output voltage, said first resistive means connected to the output node of said bipolar voltage transistor amplifier.

Claim 8

An integrated BiMOS voltage bias amplifier circuit, with a low temperature coefficient, for a radio, comprising: a substrate; a biasing network formed on said substrate to provide a biasing voltage, said biasing network including a voltage divider and a P-MOS transistor connected in series, said voltage divider having two resistors and a tapped junction between said two resistors, said P-MOS transistor having a temperature coefficient and a gate electrode connected to a ground; a bipolar transistor voltage amplifier formed on said substrate, said bipolar transistor voltage amplifier having a base-emitter junction voltage having a temperature coefficient that is opposite from that of said biasing network, said bipolar transistor voltage amplifier having an output node at its emitter electrode and having its base electrode connected to said tapped junction of said biasing network to receive said biasing voltage, wherein said output node provides a voltage equal to said biasing voltage minus said base-emitter voltage to result in an overall low temperature coefficient for providing a constant output voltage for said amplifier over a predetermined temperature range, and first resistive means for providing said constant output voltage, said first resistive means connected to the emitter electrode of said bipolar transistor voltage amplifier.

Claim 9

An integrated BiMOS voltage bias amplifier circuit, with a low temperature coefficient, for a radio, comprising: a substrate; a biasing network formed on said substrate to provide a biasing voltage, said biasing network including a voltage divider and a P-MOS transistor connected in series, said voltage divider having two resistors and a tapped junction between said two resistors, said P-MOS transistor having a temperature coefficient and a gate electrode connected to a ground; a bipolar transistor voltage amplifier formed on said substrate, said bipolar transistor voltage amplifier having a base-emitter junction voltage having a temperature coefficient that is opposite from that of said biasing network, said bipolar transistor voltage amplifier having an output node at its emitter electrode and having its base electrode connected to said tapped junction of said biasing network to receive said biasing voltage, wherein said output node provides a voltage equal to said biasing voltage minus said base-emitter voltage to result in an overall low temperature coefficient for providing a constant output voltage for said amplifier over a predetermined temperature range, and first resistive means for providing said constant output voltage, said first resistive means connected to the emitter electrode of said bipolar transistor voltage amplifier.

Claim 10

The BiMOS voltage bias circuit of claim 2 wherein said P-MOS transistor has its source electrode connected to a supply potential; and said two resistors comprising: second resistor means for providing impedance, said second resistive means connected at one end to the drain electrode of said P-MOS transistor; and third resistive means for providing impedance, said third resistive means connected at one end to an opposite end of said second resistive means and connected at an opposite end to ground.

Claim 11

The BiMOS voltage bias circuit of claim 7 wherein said bipolar transistor voltage amplifier has its collector electrode connected to said supply potential or another supply potential and its base electrode connected to said opposite end of said second resistive means.

Claim 12

The BiMOS voltage bias circuit of claim 1 wherein said first resistive means is connected at an opposite end to a ground potential.

Claim 13

The BiMOS voltage bias circuit of claim 1 wherein said MOS transistor is a P-channel enhancement MOS transistor.