Patent US5185293A successfully refreshed from Google Patents.
US5185293A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming and aligning patterns in deposted overlaying on GaAs
Assignee: Eastman Kodak Co
•
Filing: 1992-04-10
•
Granted: 1993-02-09
•
Expires: 2012-04-10
Abstract
Abstract A method is described for forming patterns in deposited overlayers on GaAs and for aligning the formed patterns with etch features produced through dry processing. The deposited overlayers on GaAs are protected during pattern formation and subsequent processing by a durable, process integrable mask of hydrogenated amorphous carbon.
Inventors
- 👤 Hans G. Franke
- 👤 Eric T. Prince
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:08
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/02; H01S5/026; H01S5/0262; H01S5/0264; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/246; H10P50/69; H10P50/691; H10P50/692; H01S5/20; H01S5/2054; H01S5/2081; Y; Y10; Y10S; Y10S148/00; Y10S148/105; Y10S148/106; Y10S438/00; Y10S438/93; Y10S438/942; Y10S438/945; Y10S438/948; Y10S438/951
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
138 words
A method of forming patterns in deposited overlayers on GaAs and aligning said patterns with etch features comprising the steps of: (a) applying a patternable layer on GaAs for use as a mask; (b) patterning said layer for use in lift-off processing to provide a mask having a first set of spaced openings; (c) depositing a first layer on top of this patterned mask and in the first set of spaced openings; (d) depositing a second layer on top of the first layer wherein the second layer is a durable, process integrable mask of hydrogenated amorphous carbon; (e) removing the lift-off mask to provide a second set of opening offset in space from the first; (f) dry etching the GaAs substrate through such second set of openings; and (g) removing the second deposited layer of hydrogenated amorphous carbon.
Claim 2
Independent Claim
138 words
A method of forming patterns in deposited overlayers on GaAs and aligning said patterns with etch features comprising the steps of: (a) applying a patternable layer on GaAs for use as a mask; (b) patterning said layer for use in lift-off processing to provide a mask having a first set of spaced openings; (c) depositing a first layer on top of this patterned mask and in the first set of spaced openings; (d) depositing a second layer on top of the first layer wherein the second layer is a durable, process integrable mask of hydrogenated amorphous carbon; (e) removing the lift-off mask to provide a second set of opening offset in space from the first; (f) dry etching the GaAs substrate through such second set of openings; and (g) removing the second deposited layer of hydrogenated amorphous carbon.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein the first deposited layer contains two or more layers of similar or different materials.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the first deposited layer contains the following layer structure, Ti-Pt-Au-Pt-Ti.
Claim 5
Dependent Claim
36 words
The method of claim 1 wherein the hydrogenated amorphous carbon is resistant to attack by; (i) acids, bases or solvents during wet etch processing; and (ii) energetic ions in chlorine containing ambients during dry etch processing.
Claim 6
Dependent Claim
40 words
The method of claim 1 wherein the hydrogenated amorphous carbon is not made ineffective as a mask by; (i) thermal processing to temperatures of 600° C. in the absence of oxygen; (ii) wet chemical processing in acids, bases, or solvents.
Claim 7
Dependent Claim
16 words
The method of claim 1 wherein the dry etch processing is performed in chlorine containing ambients.
Claim 8
Dependent Claim
15 words
The method of claim 1 wherein the hydrogenated amorphous carbon is removed by dry processing.
References Cited (Backward Citations)
US4004341A
Cited
US4053350A
Cited
US4352716A
Cited
US4429452A
Cited
US4742026A
Cited
US5091047A
Cited
US4824800A
Cited
US5102498A
Cited
JPH02262342A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-09 | 1996-08-10 | 1997-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-09 | 2000-08-10 | 2001-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-09 | 2004-08-10 | 2005-02-09 | $7700.00 | Window Closed / Lapsed |