US5185286A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing laminated semiconductor substrate
Assignee: Tokyo Electron Ltd
•
Filing: 1991-09-26
•
Granted: 1993-02-09
•
Expires: 2011-09-26
Abstract
Abstract A process for producing a laminated semiconductor comprising the steps of: providing a structure comprising a first insulating film on a single crystal semiconductor substrate, the first insulating film having a plurality of openings, and a second insulating film having a predetermined width on a perpendicular bisector of a line connecting adjacent openings of the plurality of openings; growing a single crystal semiconductor layer on the first and second insulating layers by a lateral epitaxial growth through the use of the single crystal semiconductor substrate at portions exposed at the openings as a seed crystal; subjecting the single crystal semiconductor substrate to etching back or polishing parallel to the surface of the single crystal semiconductor substrate to expose the second insulating layer; and optionally selectively insulating the single crystal semiconductor layer in the opening to isolate the single crystal semiconductor layer from the single crystal semiconductor substrate. The process obtains a single crystal semiconductor layer not having a polycrystal region.
Inventors
- 👤 Kouhei Eguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 13:00
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/018; H10W10/10; Y; Y10; Y10S; Y10S148/00; Y10S148/15
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
125 words
A process for producing a laminated semiconductor comprising the steps of: roviding a structure comprising a first insulating film on a single crystal semiconductor substrate, said first insulating film having a plurality of openings, for exposing a part of said single crystal semiconductor substrate, and a second insulating film having a width on a perpendicular bisector of a line connecting adjacent openings of said plurality of openings; growing a single crystal semiconductor layer on said first and second insulating layers through the use of said single crystal semiconductor substrate exposed on said openings as a seed crystal; and subjecting said single crystal semiconductor layer to etching back or polishing parallel to the surface of said single crystal semiconductor substrate to expose said second simulating layer.
Claim 2
Dependent Claim
125 words
A process for producing a laminated semiconductor comprising the steps of: roviding a structure comprising a first insulating film on a single crystal semiconductor substrate, said first insulating film having a plurality of openings, for exposing a part of said single crystal semiconductor substrate, and a second insulating film having a width on a perpendicular bisector of a line connecting adjacent openings of said plurality of openings; growing a single crystal semiconductor layer on said first and second insulating layers through the use of said single crystal semiconductor substrate exposed on said openings as a seed crystal; and subjecting said single crystal semiconductor layer to etching back or polishing parallel to the surface of said single crystal semiconductor substrate to expose said second simulating layer.
Claim 3
Dependent Claim
35 words
A process according to claim 1, which further comprises a step of locally insulating the single crystal semiconductor layer in the openings to isolate the single crystal semiconductor layer form the single crystal semiconductor substrate.
Claim 4
Dependent Claim
20 words
A process according to claim 1, wherein said single crystal semiconductor substrate and said single crystal semiconductor layer include silicon.
Claim 5
Dependent Claim
14 words
A process according to claim 3, wherein said fist insulating film includes silicon oxide.
Claim 6
Dependent Claim
14 words
A process according to claim 3, wherein said second insulating film includes silicon nitride.
Claim 7
Dependent Claim
48 words
A process according to claim 1, wherein said step of etch-backing is conducted by forming an organic resin layer n said single crystal semiconductor layer so as to have a flat top surface and subjecting said organic resin layer and said single crystal semiconductor layer to plasma etching.
Claim 8
Dependent Claim
132 words
A process for producing a laminated semiconductor comprising the steps of: providing a structure comprising a fist insulating film on a single crystal semiconductor substrate, said first insulating film having a plurality of openings for exposing a part of said single crystal semiconductor substrate, and a second insulating film having a width on a perpendicular bisector of a line connecting adjacent openings of said plurality of openings; growing a single crystal semiconductor layer on said fist and second insulating layers by a lateral epitaxial growth through the use of said single crystal semiconductor substrate which is exposed on said openings as a seed crystal; and subjecting said single crystal semiconductor layer to etching back or polishing parallel to the surface of said single crystal semiconductor substrate to expose said second insulating layer.
Claim 9
Dependent Claim
132 words
A process for producing a laminated semiconductor comprising the steps of: providing a structure comprising a fist insulating film on a single crystal semiconductor substrate, said first insulating film having a plurality of openings for exposing a part of said single crystal semiconductor substrate, and a second insulating film having a width on a perpendicular bisector of a line connecting adjacent openings of said plurality of openings; growing a single crystal semiconductor layer on said fist and second insulating layers by a lateral epitaxial growth through the use of said single crystal semiconductor substrate which is exposed on said openings as a seed crystal; and subjecting said single crystal semiconductor layer to etching back or polishing parallel to the surface of said single crystal semiconductor substrate to expose said second insulating layer.
Claim 10
Dependent Claim
27 words
A process according to claim 7, wherein said lateral epitaxial growth includes the step of subjecting said single crystal semiconductor layer to a vapor phase growth method.
Claim 11
Dependent Claim
20 words
A process according to claim 7, wherein said single crystal semiconductor substrate and said single crystal semiconductor layer include silicon.
Claim 12
Dependent Claim
14 words
A process according to claim 9, wherein said first insulating film includes silicon oxide.
Claim 13
Dependent Claim
14 words
A process according to claim 9, wherein said first insulating film includes silicon nitride.
Claim 14
Dependent Claim
35 words
A process according to claim 7, further comprising the step of locally insulating said single crystal semiconductor layer in the openings to isolate the single crystal second torr layer form said single crystal semiconductor substrate.
Claim 15
Dependent Claim
51 words
A process according to claim 7, wherein said step of etching back includes the step of forming an organic resin layer on said single crystal semiconductor layer so as to have a flat top surface and then subjecting said organic resin layer and said single crystal semiconductor layer to plasma etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-09 | 1996-08-10 | 1997-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-09 | 2000-08-10 | 2001-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-09 | 2004-08-10 | 2005-02-09 | $7700.00 | Window Closed / Lapsed |