Method of producing polycrystalline silicon resistor

Claim 1

A method of producing semiconductor device element including a polycrystalline silicon film resistor, comprising the steps of: forming a first insulating film on a semiconductor substrate; forming a polycrystalline silicon film on the first insulating film, the polycrystalline silicon film having a selected region containing a resistor-forming part and a conductor lead-forming part contiguous with the resistor-forming part; doping the selected region of the polycrystalline silicon film with impurities in an amount to cause the selected region to have a high electrical resistivity; covering the doped selected region with a second insulating film; pattern in the second insulating film by removing a part of the second insulating film which covers the conductor lead-forming part; heavily doping parts of the selected region of the polycrystalline silicon film which are not covered by the patterned second insulating film with impurities selected to cause those film parts to have an electrical resistively which is substantially lower than that of the part of the selected region which is covered with the patterned second insulating film; forming a metal film on the heavily doped polycrystalline silicon polysilicon film parts and on the patterned second insulating film; selectively removing a part of the metal film from above a part of the patterned second insulating film; and selectively patterning parts of the polycrystalline silicon film, the metal film and the second insulating film.

Claim 2

A method of producing semiconductor device element including a polycrystalline silicon film resistor, comprising the steps of: forming a first insulating film on a semiconductor substrate; forming a polycrystalline silicon film on the first insulating film, the polycrystalline silicon film having a selected region containing a resistor-forming part and a conductor lead-forming part contiguous with the resistor-forming part; doping the selected region of the polycrystalline silicon film with impurities in an amount to cause the selected region to have a high electrical resistivity; covering the doped selected region with a second insulating film; pattern in the second insulating film by removing a part of the second insulating film which covers the conductor lead-forming part; heavily doping parts of the selected region of the polycrystalline silicon film which are not covered by the patterned second insulating film with impurities selected to cause those film parts to have an electrical resistively which is substantially lower than that of the part of the selected region which is covered with the patterned second insulating film; forming a metal film on the heavily doped polycrystalline silicon polysilicon film parts and on the patterned second insulating film; selectively removing a part of the metal film from above a part of the patterned second insulating film; and selectively patterning parts of the polycrystalline silicon film, the metal film and the second insulating film.