Patent US5184199A successfully refreshed from Google Patents.
US5184199A
Expired / Lapsed
US
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Silicon carbide semiconductor device
Assignee: Sharp Corp
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Filing: 1990-06-05
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Granted: 1993-02-02
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Expires: 2010-06-05
Abstract
Abstract A silicon carbide semiconductor device is disclosed which includes a semiconductor substrate and a silicon carbide single-crystal layer formed above the substrate, the silicon carbide single-crystal layer having a device active region. The silicon carbide semiconductor device further includes an aluminum nitride single-crystal layer which is disposed between the silicon carbide single-crystal layer and the substrate. The aluminum nitride single-crystal layer functions as an electrically insulating layer by which the silicon carbide signale-crystal layer is isolated electrically from the substrate.
Inventors
- 👤 Yoshihisa Fujii
- 👤 Akira Suzuki
- 👤 Katsuki Furukawa
- 👤 Mitsuhiro Shigeta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 23:42
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
52 words
A silicon carbide semiconductor device comprising a semiconductor substrate and a silicon carbide single-crystal layer formed above said substrate, said silicon carbide single-crystal layer having a device active region, wherein an aluminum nitride single-crystal layer functioning as an electrically insulating layer is disposed between the silicon carbide single-crystal layer and the substrate.
Claim 2
Dependent Claim
52 words
A silicon carbide semiconductor device comprising a semiconductor substrate and a silicon carbide single-crystal layer formed above said substrate, said silicon carbide single-crystal layer having a device active region, wherein an aluminum nitride single-crystal layer functioning as an electrically insulating layer is disposed between the silicon carbide single-crystal layer and the substrate.
Claim 3
Dependent Claim
29 words
A silicon carbide semiconductor device according to claim 1, wherein a metal-oxide-semiconductor structure for field-effect transistors is fabricated in the device active region of said silicon carbide single-crystal layer.
Claim 4
Dependent Claim
18 words
A silicon carbide semiconductor device according to claim 2, wherein said field-effect transistor is in an inversion mode.
Claim 5
Dependent Claim
18 words
A silicon carbide semiconductor device according to claim 2, wherein said field-effect transistor is in a depletion mode.
Claim 6
Dependent Claim
65 words
A silicon carbide semiconductor device comprising: a semiconductor substrate; a first silicon carbide single-crystal layer formed on said semiconductor substrate; an aluminum nitride single-crystal layer functioning as an electrically insulating layer is disposed on the first silicon carbide single-crystal layer; and a second silicon carbide single-crystal layer formed on said aluminum nitride single-crystal layer, said second silicon carbide single-crystal layer having a device active region.
Claim 7
Dependent Claim
65 words
A silicon carbide semiconductor device comprising: a semiconductor substrate; a first silicon carbide single-crystal layer formed on said semiconductor substrate; an aluminum nitride single-crystal layer functioning as an electrically insulating layer is disposed on the first silicon carbide single-crystal layer; and a second silicon carbide single-crystal layer formed on said aluminum nitride single-crystal layer, said second silicon carbide single-crystal layer having a device active region.
Claim 8
Dependent Claim
30 words
A silicon carbide semiconductor device according to claim 5, wherein said second silicon carbide single-crystal layer has the same crystal structure as that of said first silicon carbide single-crystal layer.
Claim 9
Dependent Claim
21 words
A silicon carbide semiconductor device according to claim 6, wherein said second silicon carbide single-crystal layer is a β-silicon carbide layer.
References Cited (Backward Citations)
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JPS5920379A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-02-02 | 1996-08-03 | 1997-02-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-02-02 | 2000-08-03 | 2001-02-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-02-02 | 2004-08-03 | 2005-02-02 | $7700.00 | Window Closed / Lapsed |