Process for fabricating a multilayer ceramic circuit board

Claim 2

A process for fabricating a multilayer ceramic circuit board which includes the steps of: (i) providing a sintered ceramic substrate having optionally formed via holes already filled with a conductive paste or a conductive substance; (ii) optionally applying an insulating paste layer in a prescribed pattern on one side or each side of the ceramic substrate; (iii) then, providing a ceramic green tape and forming via holes in the green tape; (iv) applying a conductive paste to one side of the green tape to form a conductive pattern; (v) laminating the green tape to one side or each side of the ceramic substrate so that the conductive pattern of the green tape faces the substrate; (vi) optionally pressing and heating the laminate from step (v); and (vii) applying a conductive paste to form a conductive pattern on the other side of the green tape and filling the via holes of the green tape with a conductive paste, before or after step (v).

Claim 3

The process according to claim 1, wherein the ceramic substrate is made of alumina beryllia, MgO or AlN.

Claim 4

The process according to claim 1, wherein the ceramic substrate is an alumina substrate containing from 88 to 99.5 wt% of alumina.

Claim 5

The process according to claim 1, wherein the green tape contains glass.

Claim 6

The process according to claim 1, wherein the green tape comprises an inorganic component comprising glass, refractory filler and an oxidizing agent, and optionally including sinter the laminate of step(v) or (vii) in a substantially non-oxidizing atmosphere.

Claim 7

The process according to claim 1, wherein the green tape comprises an inorganic component comprising from 40 to 90 wt% of glass powder, from 9.99 to 60 wt% of refractory filler and from 0.01 to 20 wt% of an oxidizing agent, wherein the glass powder consists essentially of from 38 to 48 wt% of SiO 2 , from 1 to 8 wt% of A1 2 O 3 , from 0 to 10 wt% of MgO, from 1 to 8 wt% of CaO, from 0 to 15 wt% of SrO, from 18 to 28 wt% of BaO, from 0 to 20 wt% of PbO, from 10 to 20 wt% of ZnO, from 0.5 to 15 wt% of B 2 O 3 , from 0 to 7 wt% of TiO 2 +ZrO 2 and from 0 to 5 wt% of Li 2 O+Na 2 o+K 2 O, and optionally including sintering the laminate of step (v) or (vii) in a substantially non-oxidizing atmosphere.

Claim 8

A process for fabricating a multilayer ceramic circuit board which comprises the steps of: (i) providing a sintered ceramic substrate having optionally formed via holes already filled with a conductive paste or a conductive substance; (ii) optionally applying an insulating paste layer in a prescribed pattern on one side or each side of the ceramic substrate; (iii) then, providing a ceramic green tape and forming via holes in the green tape; (iv) applying a conductive paste to to form a conductive pattern one side of the green tape; (v) laminating the green tape to one side or each side of the ceramic substrate so that the conductive pattern of the green tape faces the substrate; (vi) optionally pressing and heating the laminate from step (v); and (vii) applying a conductive paste to form a conductive pattern on the other side of the green tape and filling the via holes of the green tape with a conductive paste, before or after step (v). (viii) laminating to the above prepared green tape on the ceramic substrate a ceramic green tape having via holes formed, and optionally pressing and heating the laminate; (ix) applying a conductive paste to the green tape laminated in step (viii) to form a conductive pattern and to fill the via holes of the same green tape; (x) optionally repeating steps (viii) and (ix) until the desired number of circuit layers has been obtained; and (xi) finally pressing and sintering the assembly of the ceramic substrate and the green tapes.

Claim 9

A process for fabricating a multilayer ceramic circuit board which comprises the steps of: (i) providing a sintered ceramic substrate having optionally formed via holes already filled with a conductive paste or a conductive substance; (ii) optionally applying an insulating paste layer in a prescribed pattern on one side or each side of the ceramic substrate; (iii) then, providing a ceramic green tape and forming via holes in the green tape; (iv) applying a conductive paste to to form a conductive pattern one side of the green tape; (v) laminating the green tape to one side or each side of the ceramic substrate so that the conductive pattern of the green tape faces the substrate; (vi) optionally pressing and heating the laminate from step (v); and (vii) applying a conductive paste to form a conductive pattern on the other side of the green tape and filling the via holes of the green tape with a conductive paste, before or after step (v). (viii) laminating to the above prepared green tape on the ceramic substrate a ceramic green tape having via holes formed, and optionally pressing and heating the laminate; (ix) applying a conductive paste to the green tape laminated in step (viii) to form a conductive pattern and to fill the via holes of the same green tape; (x) optionally repeating steps (viii) and (ix) until the desired number of circuit layers has been obtained; and (xi) finally pressing and sintering the assembly of the ceramic substrate and the green tapes.

Claim 10

The process according to claim 7, wherein the ceramic substrate is made of alumina, beryllia, MgO or AlN.

Claim 11

The process according to claim 7, wherein the ceramic substrate is an alumina substrate containing from 88 to 99.5 wt% of alumina.

Claim 12

The process according to claim 7, wherein the green tape contains glass.

Claim 13

The process according to claim 7, wherein the green tape comprises an inorganic component comprising glass, refractory filler and an oxidizing agent, and sintering is conducted in a substantially non-oxidizing atmosphere.

Claim 14

The process according to claim 7, wherein the green tape comprises an inorganic component comprising from 40 to 90 wt% of glass powder, from 9.99 to 60 wt% of refractory filler and from 0.01 to 20 wt% of an oxidizing agent, wherein the glass powder consists essentially of from 38 to 48 wt% of SiO 2 , from 1 to 8 wt% of Al 2 O 3 , from 0 to 10 wt% of MgO, from 1 to 8 wt% of CaO, from 0 to 15 wt% of SrO, from 18 to 28 wt% of BaO, from 0 to 20 wt% of PbO, from 10 to 20 wt% of TiO 2 +ZrO 2 and from 0 to 5 wt% B 2 O 3 , from 0 to 7 wt% of TiO 2 +ZrO 2 and from 0 to 5 wt% of Li 2 O+Na 2 O+K 2 O, and sintering is conducted in a substantially non-oxidizing atmosphere.