US5176557A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electron emission element and method of manufacturing the same
Assignee: Canon Inc
•
Filing: 1991-08-14
•
Granted: 1993-01-05
•
Expires: 2011-08-14
Abstract
Abstract A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the concial portions, the deriving electrode being formed on the insulating layer.
Inventors
- 👤 Masahiko Okunuki
- 👤 Akira Suzuki
- 👤 Isamu Shimoda
- 👤 Tetsuya Kaneko
- 👤 Takeo Tsukamoto
- 👤 Toshihiko Takeda
- 👤 Takao Yonehara
- 👤 Takeshi Ichikawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 15:08
CPC Classifications
H; H01; H01J; H01J3/00; H01J3/02; H01J3/021; H01J3/022; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J1/3042; H01J31/00; H01J31/08; H01J31/10; H01J31/12; H01J31/123; H01J31/125; H01J31/127; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30446
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
110 words
A method of manufacturing a multi type electron emission element, comprising the steps of: forming a plurality of recesses in an insulating substrate; forming a plurality of electrodes each with a conical portion on bottom surfaces of said plurality of recesses such that single crystal regions are grown centered on single nuclei in heterogeneous material regions having a sufficiently higher nucleation density than that of an insulating material on said bottom surfaces of said plurality of recesses and allowing growth of only said single nuclei; and forming a deriving electrode, part of which is formed near at least said conical portions, said deriving electrode being formed on said insulating substrate.
Claim 2
Independent Claim
110 words
A method of manufacturing a multi type electron emission element, comprising the steps of: forming a plurality of recesses in an insulating substrate; forming a plurality of electrodes each with a conical portion on bottom surfaces of said plurality of recesses such that single crystal regions are grown centered on single nuclei in heterogeneous material regions having a sufficiently higher nucleation density than that of an insulating material on said bottom surfaces of said plurality of recesses and allowing growth of only said single nuclei; and forming a deriving electrode, part of which is formed near at least said conical portions, said deriving electrode being formed on said insulating substrate.
Claim 3
Dependent Claim
20 words
A method according to claim 1, wherein said bottom surface of said recess is formed on a desired underlying material.
Claim 4
Dependent Claim
78 words
A method according to claim 1 or 2, wherein said plurality of recesses are arranged to constitute recess arrays, grooves are formed between said recesses constituting the respective recess arrays, electrode wiring layers are respectively formed in said grooves, each of said electrode wiring layers being adapted to commonly connect said electrodes of each of said electrode arrays, and said deriving electrode comprises a plurality of deriving electrodes connected to said electrode wiring layers in a matrix form.
Claim 5
Independent Claim
108 words
A method of manufacturing an electron emission element comprising an electrode formed on a deposition surface and having a conical portion, an insulating layer formed on said deposition surface and having an opening centered on said conical portion, and a deriving electrode formed on said insulating layer near said conical portion, wherein said electrode with said conical portion is formed by a single crystal region centered on a single nucleus grown in a heterogeneous material formed in said deposition surface, the heterogeneous material having a sufficiently higher nucleation density than that of a material of said deposition surface and micropatterned to allow growth of only said single nucleus.
Claim 6
Independent Claim
108 words
A method of manufacturing an electron emission element comprising an electrode formed on a deposition surface and having a conical portion, an insulating layer formed on said deposition surface and having an opening centered on said conical portion, and a deriving electrode formed on said insulating layer near said conical portion, wherein said electrode with said conical portion is formed by a single crystal region centered on a single nucleus grown in a heterogeneous material formed in said deposition surface, the heterogeneous material having a sufficiently higher nucleation density than that of a material of said deposition surface and micropatterned to allow growth of only said single nucleus.
Claim 7
Dependent Claim
17 words
A method according to claim 4, wherein said deposition surface is formed on a desired underlying material.
Claim 8
Dependent Claim
17 words
A method according to claim 4 or 5, wherein said deposition surface consists of an amorphous material.
Claim 9
Independent Claim
115 words
A method of manufacturing an electron emission element, comprising the steps of: forming an insulating layer on a substrate having a conductive material surface; forming a heterogeneous material having a sufficiently higher nucleation density than that of a material of said insulating layer and micropatterned to allow growth of only a single nucleus; forming an opening in said insulating layer to partially expose said conductive material surface; and forming an electrode with a conical portion by growing a crystal centered on said single nucleus grown in said heterogeneous material, growing a crystal on a conductive material surface portion exposed in said opening, and connecting said conductive material surface to said electrode with said conical portion.
Claim 10
Independent Claim
115 words
A method of manufacturing an electron emission element, comprising the steps of: forming an insulating layer on a substrate having a conductive material surface; forming a heterogeneous material having a sufficiently higher nucleation density than that of a material of said insulating layer and micropatterned to allow growth of only a single nucleus; forming an opening in said insulating layer to partially expose said conductive material surface; and forming an electrode with a conical portion by growing a crystal centered on said single nucleus grown in said heterogeneous material, growing a crystal on a conductive material surface portion exposed in said opening, and connecting said conductive material surface to said electrode with said conical portion.
Claim 11
Independent Claim
117 words
A method of manufacturing an electron emission element, comprising the steps of: forming an electrode with a conical portion centered on a single nucleus grown in a heterogeneous material formed on a deposition surface, the heterogeneous material having a sufficiently higher nucleation density than that of a material of said deposition surface and micropatterned to allow growth of only said single nucleus; forming an insulating layer on said electrode with said conical portion and said deposition surface and then an electrode layer on said insulating layer; forming an opening in said electrode layer at a position corresponding to said conical portion; and selectively etching said insulating layer through said opening to expose at least said conical portion.
Claim 12
Independent Claim
117 words
A method of manufacturing an electron emission element, comprising the steps of: forming an electrode with a conical portion centered on a single nucleus grown in a heterogeneous material formed on a deposition surface, the heterogeneous material having a sufficiently higher nucleation density than that of a material of said deposition surface and micropatterned to allow growth of only said single nucleus; forming an insulating layer on said electrode with said conical portion and said deposition surface and then an electrode layer on said insulating layer; forming an opening in said electrode layer at a position corresponding to said conical portion; and selectively etching said insulating layer through said opening to expose at least said conical portion.
Claim 13
Dependent Claim
17 words
A method according to claim 8, wherein said deposition surface is formed on a desired underlying material.
Claim 14
Independent Claim
114 words
A method for manufacturing an electron emitting element comprising a substrate, an emitter electrode having a conical portion for emitting an electron and a deriving electrode, the emitter electrode being disposed of a single crystal material on the substrate, said method comprising the steps of: preparing the substrate including a deposition surface and a heterogeneous surface having a sufficiently higher nucleation density than that of a material of the deposition surface and an area to allow growth of only a single nucleus; and forming the single nucleus on the heterogenous surface and growing a single crystal from the nucleus by using a vapor phase deposition method, thus forming an emitter electrode on the substrate.
Claim 15
Independent Claim
114 words
A method for manufacturing an electron emitting element comprising a substrate, an emitter electrode having a conical portion for emitting an electron and a deriving electrode, the emitter electrode being disposed of a single crystal material on the substrate, said method comprising the steps of: preparing the substrate including a deposition surface and a heterogeneous surface having a sufficiently higher nucleation density than that of a material of the deposition surface and an area to allow growth of only a single nucleus; and forming the single nucleus on the heterogenous surface and growing a single crystal from the nucleus by using a vapor phase deposition method, thus forming an emitter electrode on the substrate.
References Cited (Backward Citations)
US3259782A
Cited
US3755704A
Cited
US3998678A
Cited
US3970887A
Cited
US4008412A
Cited
US4020381A
Cited
US4430570A
Cited
US4325000A
Cited
US4324999A
Cited
US4513308A
Cited
EP0150885A2
Cited
EP0172089A1
Cited
CA1261911A
Cited
US5008206A
Cited
US4999313A
Cited
US4721885A
Cited
JPS63239932A
Cited
JPS63239928A
Cited
US5010033A
Cited
US4977096A
Cited
JPS6442117A
Cited
JPH01187875A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-05 | 1996-07-06 | 1997-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-05 | 2000-07-06 | 2001-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-05 | 2004-07-06 | 2005-01-05 | $7700.00 | Window Closed / Lapsed |