Method of dry etching in semiconductor device processing

Claim 1

A method of producing a semiconductor device including a step for simultaneously dry etching first and second deposited silicon oxide layers of different types comprising the steps of providing an etching gas mixture absent of an inhibitor such as oxygen comprising a carbon flouride gas, C n F 2n+2 , wherein n is an integer, and an inert gas, creating a plasma wherein fluorine radicals, F*, are liberated in the plasma, applying the fluorine radicals, F*, to an etching surface of said first and second deposited silicon oxide layers, supplying a volume of inert gas in the created plasma of fluorine radicals, F*, so that a buffering effect is created on the application of the fluorine radicals, F*, to the etching surface enhancing the etching rate while maintaining etching uniformity.

Claim 2

A method of producing a semiconductor device including a step for simultaneously dry etching first and second deposited silicon oxide layers of different types comprising the steps of providing an etching gas mixture absent of an inhibitor such as oxygen comprising a carbon flouride gas, C n F 2n+2 , wherein n is an integer, and an inert gas, creating a plasma wherein fluorine radicals, F*, are liberated in the plasma, applying the fluorine radicals, F*, to an etching surface of said first and second deposited silicon oxide layers, supplying a volume of inert gas in the created plasma of fluorine radicals, F*, so that a buffering effect is created on the application of the fluorine radicals, F*, to the etching surface enhancing the etching rate while maintaining etching uniformity.

Claim 4

A method of producing a semiconductor device employing an etch-back planarization step comprising: applying a first insulating layer over a metal layer, applying a second SOG layer over said first layer, utilizing an etching gas mixture absent of an inhibitor such as oxygen comprising a carbon fluoride gas, C n F 2n+2 , wherein n is an integer, and an inert gas, creating a plasma wherein fluorine radicals, F*, are liberated in the plasma, applying the fluorine radicals, F*, to an etching surface of said first and second layers to a predetermined depth to form a more planarized surface, supplying a volume of inert gas in the created plasma of fluorine radicals, F*, so that a buffering effect is created on the application of the fluorine radicals, F*, to the etching surface enhancing the etching rate while maintaining etching uniformity.

Claim 5

A method of producing a semiconductor device employing an etch-back planarization step comprising: applying a first insulating layer over a metal layer, applying a second SOG layer over said first layer, utilizing an etching gas mixture absent of an inhibitor such as oxygen comprising a carbon fluoride gas, C n F 2n+2 , wherein n is an integer, and an inert gas, creating a plasma wherein fluorine radicals, F*, are liberated in the plasma, applying the fluorine radicals, F*, to an etching surface of said first and second layers to a predetermined depth to form a more planarized surface, supplying a volume of inert gas in the created plasma of fluorine radicals, F*, so that a buffering effect is created on the application of the fluorine radicals, F*, to the etching surface enhancing the etching rate while maintaining etching uniformity.

Claim 7

A method of producing a semiconductor wafer which includes the planarization of a surface of the semiconductor wafer during the practice of the method comprising the steps of: providing reactive ion etching system employing a gas medium absent of an inhibitor such as oxygen comprising a mixture of a carbon fluoride gas, C n F 2n+2 , wherein n is an integer, and an inert gas, said gas mixture comprising a gas mixture ratio of carbon fluoride gas/inert gas in the range between about 10%/90% to 90%/10%, placing the semiconductor wafer in a plasma generated by the system including a high volume of fluorine radicals, F*, etching a surface of the semiconductor wafer with the application of the flourine radicals, F*, to the surface, and buffering the application of generated radicals, F*, applied to the etching surface by providing a volume of inert gas in the created plasma of fluorine radicals, F*, sufficient to provide a molecular cushioning affect at the etching surface against direct application of the created plasma of fluorine radicals, F*, to the etching surface.

Claim 8

A method of producing a semiconductor wafer which includes the planarization of a surface of the semiconductor wafer during the practice of the method comprising the steps of: providing reactive ion etching system employing a gas medium absent of an inhibitor such as oxygen comprising a mixture of a carbon fluoride gas, C n F 2n+2 , wherein n is an integer, and an inert gas, said gas mixture comprising a gas mixture ratio of carbon fluoride gas/inert gas in the range between about 10%/90% to 90%/10%, placing the semiconductor wafer in a plasma generated by the system including a high volume of fluorine radicals, F*, etching a surface of the semiconductor wafer with the application of the flourine radicals, F*, to the surface, and buffering the application of generated radicals, F*, applied to the etching surface by providing a volume of inert gas in the created plasma of fluorine radicals, F*, sufficient to provide a molecular cushioning affect at the etching surface against direct application of the created plasma of fluorine radicals, F*, to the etching surface.

Claim 12

A method of producing a semiconductor device which includes the planarization of a surface of the semiconductor wafer during the practice of the method, comprising the steps of: providing a reactive ion etching system employing a gas medium absent of an inhibitor such as oxygen comprising a mixture of a carbon fluoride gas, C n F 2n+2 , wherein n is an integer, and an inert gas and wherein the applied RF power is in the range of 400 W to 800 W, the the range of 1:100 to 30:1, the total gas flow is in the range of 100 sccm to 200 sccm and the system pressure is in the range of 200 mTorr to 300 mTorr producing a plasma having a high volume of fluorine radicals, F*, placing the semiconductor wafer in the plasma generated by the system, and etching away the semiconductor surface wherein inert gas molecules at the etching surface buffer the application of the generated radicals, F*, to the etching surface.

Claim 13

A method of producing a semiconductor device which includes the planarization of a surface of the semiconductor wafer during the practice of the method, comprising the steps of: providing a reactive ion etching system employing a gas medium absent of an inhibitor such as oxygen comprising a mixture of a carbon fluoride gas, C n F 2n+2 , wherein n is an integer, and an inert gas and wherein the applied RF power is in the range of 400 W to 800 W, the the range of 1:100 to 30:1, the total gas flow is in the range of 100 sccm to 200 sccm and the system pressure is in the range of 200 mTorr to 300 mTorr producing a plasma having a high volume of fluorine radicals, F*, placing the semiconductor wafer in the plasma generated by the system, and etching away the semiconductor surface wherein inert gas molecules at the etching surface buffer the application of the generated radicals, F*, to the etching surface.