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US5169791A
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Method for the passivation of crystal defects in polycrystalline silicon material
Assignee: Siemens AG
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Filing: 1990-09-20
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Granted: 1992-12-08
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Expires: 2010-09-20
Abstract
Abstract A method for the passivation of crystal defects in polycrystalline or amorphous silicon material using a temperature treatment step in a hydrogen-containing atmosphere the method results in favorable diode properties and favorable passivation properties in amorphous or, respectively, polycrystalline silicon material in a simple manner. Hydrogen-oxygen compounds are reduced at the surface of the silicon material, creating atomic hydrogen that diffuses into the silicon material.
Inventors
- 👤 Adolf Muenzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:58
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94; Y; Y10; Y10S; Y10S136/00; Y10S136/29; Y10S148/00; Y10S148/128
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
60 words
A method for the passivation of crystal defects in polycrystalline or amorphous silicon material, comprising the step of: reducing a compound comprising a hydrogen-oxygen-bond at a surface of the silicon material causing atomic hydrogen to be created that diffuses into the silicon material, the reduction step being performed at a temperature of between approximately 250° C. to about 500° C.
Claim 2
Independent Claim
60 words
A method for the passivation of crystal defects in polycrystalline or amorphous silicon material, comprising the step of: reducing a compound comprising a hydrogen-oxygen-bond at a surface of the silicon material causing atomic hydrogen to be created that diffuses into the silicon material, the reduction step being performed at a temperature of between approximately 250° C. to about 500° C.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein water is used as the hydrogen-oxygen compound.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein the pressure of an environment containing the bonded hydrogen atmosphere is greater than ambient pressure.
Claim 5
Independent Claim
56 words
A method for the passivation of crystal defects in silicon material comprising the steps of reducing a hydrogen-oxygen containing compound at a surface of a silicon material and causing hydrogen to be created that diffuses into the silicon material, the reduction step being performed at a temperature of between approximately 250° C. to about 500° C.
Claim 6
Independent Claim
56 words
A method for the passivation of crystal defects in silicon material comprising the steps of reducing a hydrogen-oxygen containing compound at a surface of a silicon material and causing hydrogen to be created that diffuses into the silicon material, the reduction step being performed at a temperature of between approximately 250° C. to about 500° C.
Claim 7
Dependent Claim
14 words
The method of claim 4 wherein water is used as the hydrogen-oxygen containing compound.
Claim 8
Dependent Claim
21 words
The method of claim 4 wherein the pressure of an environment containing the bonded hydrogen atmosphere is greater than ambient pressure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-08 | 1996-06-08 | 1996-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-08 | 2000-06-08 | 2000-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-08 | 2004-06-08 | 2004-12-08 | $7700.00 | Window Closed / Lapsed |