Patent US1034981A successfully refreshed from Google Patents.
US4835006A
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US
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Process for the passivation of crystal defects
Assignee: Siemens AG
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Filing: 1987-10-13
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Granted: 1989-05-30
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Expires: 2007-10-13
Abstract
Abstract A process for the passivation of crystal defects or grain boundaries or internal grain defects or surfaces in an electrically conductive material in a plasma, where the passivation is carried out by the influence of suitable ions on the electrically conductive material to facilitate a shorter process time and lower stress on the electrically conductive material. A high-frequency gas discharge plasma is acted upon by a superimposed d.c. voltage which serves to accelerate the ions, suitable to carry out the passivation, towards the electrically conductive material.
Inventors
- 👤 Heinrich Grasser
- 👤 Adolf Muenzer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 01:54
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/94; H10F; H10F71/00; H10F71/129; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
99 words
A process for the passivation of crystalline material subject to structural defects including grain boundaries, internal grain defects, and surface defects and the crystalline material is electrically conductive material, the processing comprising the steps of: producing a high-frequency gas discharge having a prescribed volume containing atomic ions suitable for passivation; accelerating the atomic ions suitable for passivation by a superimposed d.c. voltage producing an electric field occupying a volume corresponding to the prescribed volume in the high-frequency gas discharge plasma; and directing the acceleration of atomic ions toward the electrically conductive material for combining with the electrically conductive material.
Claim 2
Dependent Claim
99 words
A process for the passivation of crystalline material subject to structural defects including grain boundaries, internal grain defects, and surface defects and the crystalline material is electrically conductive material, the processing comprising the steps of: producing a high-frequency gas discharge having a prescribed volume containing atomic ions suitable for passivation; accelerating the atomic ions suitable for passivation by a superimposed d.c. voltage producing an electric field occupying a volume corresponding to the prescribed volume in the high-frequency gas discharge plasma; and directing the acceleration of atomic ions toward the electrically conductive material for combining with the electrically conductive material.
Claim 3
Dependent Claim
16 words
A process in accordance with claim 1, wherein hydrogen ions act upon the electrically conductive material.
Claim 4
Dependent Claim
16 words
A process in accordance to claim 2, wherein oxygen ions act upon the electrically conductive material.
Claim 5
Dependent Claim
15 words
A process according to claim 2, wherein nitrogen ions act upon the electrically conductive material.
Claim 6
Dependent Claim
18 words
A process according to claim 2, wherein a plasma is used to provide means for depositing silicon layer.
Claim 7
Dependent Claim
11 words
A process according to claim 2, wherein monocrystalline material is passivated.
Claim 8
Dependent Claim
17 words
A process in accordance with claim 2, wherein the surface of an electrically conductive material is passivated.
Claim 9
Dependent Claim
15 words
A process according to claim 1, wherein oxygen ions act upon the electrically conductive material.
Claim 10
Dependent Claim
15 words
A process according to claim 8, wherein nitrogen ions act upon the electrically conductive material.
Claim 11
Dependent Claim
18 words
A process according to claim 8, wherein a plasma is used to provide means for depositing silicon layer.
Claim 12
Dependent Claim
11 words
A process according to claim 8, wherein monocrystalline material is passivated.
Claim 13
Dependent Claim
11 words
A process according to claim 11, wherein polycrystalline material is passivated.
Claim 14
Dependent Claim
11 words
A process according to claim 8, wherein polycrystalline material is passivated.
Claim 15
Dependent Claim
17 words
A process in accordance with claim 8, wherein the surface of an electrically conductive material is passivated.
Claim 16
Dependent Claim
15 words
A process according to claim 1, wherein nitrogen ions act upon the electrically conductive material.
Claim 17
Dependent Claim
18 words
A process according to claim 15, wherein a plasma is used to provide means for depositing silicon layer.
Claim 18
Dependent Claim
12 words
A process according to claim 15, wherein a silane plasma is used.
Claim 19
Dependent Claim
11 words
A process according to claim 17, wherein polycrystalline material is passivated.
Claim 20
Dependent Claim
11 words
A process according to claim 17, wherein monocrystalline material is passivated.
Claim 21
Dependent Claim
17 words
A process in accordance with claim 17, wherein the surface of an electrically conductive material is passivated.
Claim 22
Dependent Claim
11 words
A process according to claim 15, wherein polycrystalline material is passivated.
Claim 23
Dependent Claim
11 words
A process according to claim 15, wherein monocrystalline material is passivated.
Claim 24
Dependent Claim
17 words
A process in accordance with claim 15, wherein the surface of an electrically conductive material is passivated.
Claim 25
Dependent Claim
18 words
A process according to claim 1, wherein a plasma is used to provide means for depositing silicon layer.
Claim 26
Dependent Claim
11 words
A process according to claim 24, wherein polycrystalline material is passivated.
Claim 27
Dependent Claim
11 words
A process according to claim 24, wherein monocrystalline material is passivated.
Claim 28
Dependent Claim
17 words
A process in accordance with claim 24, wherein the surface of an electrically conductive material is passivated.
Claim 29
Dependent Claim
11 words
A process according to claim 1, wherein polycrystalline material is passivated.
Claim 30
Dependent Claim
11 words
A process according to claim 1, wherein monocrystalline material is passivated.
Claim 31
Dependent Claim
17 words
A process in accordance with claim 1, wherein the surface of an electrically conductive material is passivated.
Claim 32
Dependent Claim
36 words
A process as claimed in one of the claims 1, 2, 8, 15, 24, 17, 28, 29 or 30, wherein that the electrically conductive material is arranged on a d.c. voltage electrode which delimits the plasma.
Claim 33
Dependent Claim
47 words
A process as claimed in one of the claims 1, 2, 8, 15, 24, 17, 28, 29 or 30, wherein that the ion energy levels are set by means of the connected d.c. voltage to be such that it is possible to dispense with additional substrate heating.
References Cited (Backward Citations)
US4152478A
Cited
US4343830A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |