Microwave semiconductor device capable of controlling a threshold voltage

Claim 1

A semiconductor device having a Schottky barrier FET, said FET comprising: a semiconductor device substrate; a source region formed on said substrate, said source region comprising a plurality of first regions; a drain region formed on said substrate, said drain region comprising a plurality of second regions, said second regions corresponding with said first regions to form a plurality of active regions; a plurality of gate regions, each of said gate regions being disposed in one of said active regions between said first region of said source region and said second regions of said drain region forming said one of said active regions; a gate electrode comprising a plurality of sections and a plurality of coupling segments, each of said sections being formed on a different one of said gate regions, said gate regions being adjacent to each other, each of said sections being electrically coupled to each section on each adjacent gate region by one of said coupling segments; and a plurality of control electrodes for controlling a threshold voltage of said FET, a portion of each of said control electrodes being associated with only one of said active regions, said portion being formed on said substrate under one of said coupling segments at a predetermined distance away from said active region associated with said portion, each of said control electrodes extending outward from said substrate.