Field-effect transistor

Abstract

Abstract PURPOSE:To decrease parasitic resistance and to prevent mutual interference of signals, by isolating gate electrodes between right and left gate pads, and isolating channel regions between both gate pads. CONSTITUTION:Source and drain electrodes 1 and 2, which are ohmic-contacted, gate pads 3, rectifying gate electrodes 4 and semiconductor active regions (channel regions) 5 are provided. The gate electrodes 4 and the semiconductor active regions 5 between the right and left gate pads 3 are isolated. Since the gate electrodes (finger blocks) are isolated, the gate resistance can be decreased. Since the active regions 5 are also isolated, deterioration in characteristics due to mutual interference can be prevented.

Inventors

• 👤 Kazuo Hayashi
• 👤 一夫 林

Bibliographic Details