Patent JP2002247674A successfully refreshed from Google Patents.
Patent US5166858A successfully refreshed from Google Patents.
US5166858A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor formed in three conductive layers
Assignee: Xilinx Inc
•
Filing: 1991-10-30
•
Granted: 1992-11-24
•
Expires: 2011-10-30
Abstract
Abstract A capacitor is formed in three adjacent conductive layers of a semiconductor integrated circuit chip. A first plate of the capacitor is formed in the middle layer. A second plate is formed in the upper and lower layers plus a small portion of the middle layer which interconnects the upper and lower layers and forms a U-shaped structure surrounding the first plate. These capacitors are preferably formed in pairs with the first plates interconnected. The second plates may be connected to different voltage supplies to form a capacitive voltage divider.
Inventors
- 👤 Scott O. Frake
- 👤 Roger D. Carpenter
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:47
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/212
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
92 words
A sandwich capacitor formed above a semiconductor substrate comprising: a polysilicon layer; a first metal layer formed above said polysilicon layer; a second metal layer formed above said polysilicon layer; said polysilicon and metal layers being separated form each other by insulating layers; a first capacitor plate formed in said first metal layer; a second capacitor plate formed in portions of said polysilicon and second metal layers which are below and above said first capacitor plate and from a portion of said first metal layer electrically isolated form said first capacitor plate.
Claim 2
Dependent Claim
92 words
A sandwich capacitor formed above a semiconductor substrate comprising: a polysilicon layer; a first metal layer formed above said polysilicon layer; a second metal layer formed above said polysilicon layer; said polysilicon and metal layers being separated form each other by insulating layers; a first capacitor plate formed in said first metal layer; a second capacitor plate formed in portions of said polysilicon and second metal layers which are below and above said first capacitor plate and from a portion of said first metal layer electrically isolated form said first capacitor plate.
Claim 3
Dependent Claim
22 words
A pair of sandwich capacitors, each formed as in claim 1, said first capacitor plates of each of said pair being interconnected.
Claim 4
Dependent Claim
18 words
A pair of sandwich capacitors as in claim 2, said second capacitor plates of said pair being interconnected.
Claim 5
Dependent Claim
22 words
A pair of sandwich capacitors as in claim 2, said second capacitor plates of said pair being electrically isolated from each other.
Claim 6
Dependent Claim
117 words
A pair of sandwich capacitors formed above a semiconductor substrate comprising: a first conductive layer; a second conductive layer formed above said first conductive layer; a third conductive layer formed above said second conductive layer; said conductive layers being separated from each other by insulating layers; a pair of first capacitor plates each formed in said second conductive layer and electrically connected to each other; and a pair of second capacitor plates each formed in portions of said first and third conductive layers which are below and above said first capacitor plate and from portions of said second conductive layer electrically isolated from said first capacitor plates, said second capacitor plates being electrically isolated from each other.
Claim 7
Dependent Claim
117 words
A pair of sandwich capacitors formed above a semiconductor substrate comprising: a first conductive layer; a second conductive layer formed above said first conductive layer; a third conductive layer formed above said second conductive layer; said conductive layers being separated from each other by insulating layers; a pair of first capacitor plates each formed in said second conductive layer and electrically connected to each other; and a pair of second capacitor plates each formed in portions of said first and third conductive layers which are below and above said first capacitor plate and from portions of said second conductive layer electrically isolated from said first capacitor plates, said second capacitor plates being electrically isolated from each other.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-11-24 | 1996-05-25 | 1996-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-24 | 2000-05-25 | 2000-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-24 | 2004-05-25 | 2004-11-24 | $7700.00 | Window Closed / Lapsed |