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Small-particle semiconductors in rigid matrices

Assignee: EIDP Inc
•
Filing: 1991-08-26
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Granted: 1992-11-10
•
Expires: 2011-08-26
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Abstract

Abstract Nonlinear optical materials comprising porous glass, the pores of which contain a semiconductor material and a polymer.

Inventors

  • 👤 Norman Herron
  • 👤 Ying Wang

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 23:09
CPC Classifications
B; B32; B32B; B32B15/00; C; C03; C03C; C03C14/00; C03C14/006; C03C23/00; C03C23/008; G; G02; G02F; G02F1/00; G02F1/35; G02F1/355; G02F1/3555; C03C2214/00; C03C2214/12; C03C2214/16

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 139 words
An apparatus for producing third-order nonlinear optical effects, comprising an article of manufacture consisting essentially of porous glass, the pores of which contain a polymer and a semiconductor material comprising at least one cation selected from the group consisting of Cd +2 , Zn +2 , Pb +2 , Cu +2 , Ga +3 , In +3 , and Ti +4 , and at least one anion selected from the group consisting of S -2 , Se -2 , Q -2 , I - , P -3 , Sb -3 , and As -3 , provided that when the cation is In +3 or GA +3 , the anion is other than P -3 , Sb -3 or As -3 , and a source of coherent electromagnetic radiation arranged for irradiating said porous glass with said coherent electromagnetic radiation.
Claim 2
Independent Claim 139 words
An apparatus for producing third-order nonlinear optical effects, comprising an article of manufacture consisting essentially of porous glass, the pores of which contain a polymer and a semiconductor material comprising at least one cation selected from the group consisting of Cd +2 , Zn +2 , Pb +2 , Cu +2 , Ga +3 , In +3 , and Ti +4 , and at least one anion selected from the group consisting of S -2 , Se -2 , Q -2 , I - , P -3 , Sb -3 , and As -3 , provided that when the cation is In +3 or GA +3 , the anion is other than P -3 , Sb -3 or As -3 , and a source of coherent electromagnetic radiation arranged for irradiating said porous glass with said coherent electromagnetic radiation.
Claim 3
Dependent Claim 83 words
The apparatus of claim 1 wherein the semiconductor is selected from the group consisting CdS, CdSe, ZnS, ZnSe, PbS, PbSe, PbI 2 , CuS, CuSe, TiO 2 , In 2 O 3 , Ga 2 S 3 , In 2 S 3 , Ga 2 Se 3 , Cd 3 As 2 , Pb 3 P 2 , Zn 3 P 2 , Cd 3 P 2 , Pb 3 As 2 , Zn 3 As 2 and In 2 Se 3 .
Claim 4
Dependent Claim 116 words
The apparatus of claim 1 wherein the polymer is prepared from at least one monomer selected from the group consisting of methacrylate esters; acrylate esters; styrene, vinyl acetate; acrylonitrile; methacrylonitrile; vinylidene halides of the formula CH 2 ═C(X) 2 , wherein each X is Cl or F; substituted butadienes of the formula CH 2 ═C(R)C(R)═CH 2 , wherein each R independently is C 1 -C 10 alkyl, C1 or F; acrylamide derivatives of the formula CH 2 ═CHCON(R) 2 , wherein each R independently is H or C 1 -C 10 alkyl; methacrylamide derivatives of the formula CH 2 ═C(CH 3 )CON(R) 2 , wherein each R independently is H or C 1 -C 10 alkyl.
Claim 5
Dependent Claim 13 words
The apparatus of claim 3 wherein the monomers are methacrylate esters and styrene.
Claim 6
Dependent Claim 11 words
The apparatus of claim 4 wherein the monomer is methyl methacrylate.
Claim 7
Dependent Claim 118 words
The apparatus of claim 1 wherein the glass is selected from the group consisting of SiO 2 , GeO 2 , TiO 2 , Y 2 O 3 , ZrO 2 , SiO 2 -BaO, SiO 2 -B 2 O 3 , SiO 2 -B 2 O 3 -Na 2 O, SiO 2 -Na 2 O, SiO 2 -K 2 O, SiO 2 -Al 2 O 3 , SiO 2 -GeO 2 , SiO 2 -TiO 2 , SiO 2 -Y 2 O 3 , Al 2 O 3 -GeO 2 , Al 2 O 3 -ZrO 2 , TiO 2 -ZrO 2 , ZrO 2 -SiO 2 and PbO-La 2 O 3 -ZrO 2 -TiO 2 .
Claim 8
Dependent Claim 12 words
The apparatus of claim 6 wherein the glass is SiO 2 .
Claim 9
Dependent Claim 22 words
The apparatus of claim 1 wherein the concentration of cation in the glass is from about 0.01 to about 20 wt. %.
Claim 10
Dependent Claim 17 words
The apparatus of claim 8 wherein the concentration is from about 0.1 to about 5 wt. %.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-11-10 1996-05-11 1996-11-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-11-10 2000-05-11 2000-11-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-11-10 2004-05-11 2004-11-10 $7700.00 Window Closed / Lapsed

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