US4816183A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composite photosensitive material
Assignee: Leland Stanford Junior University
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Filing: 1986-08-21
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Granted: 1989-03-28
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Expires: 2006-08-21
Abstract
Abstract A composite photosensitive material of enhanced sensitivity to, and absorption of, incident radiation, wherein an array of particles of an electrically conducting material is embedded in and dispersed through a semiconducting matrix transparent to the wavelengths of interest, the particles having sizes of from about 1 to about 100 nanometers and having volume fractions of at least about 10 percent. The composite material is usable in photosensitive device applications such as detectors, photocells, photodiodes, and vidicons. Sensitivity to infrared radiation is particularly high where the matrix has a dielectric constant of at least about 10. The preferred particle material for enhanced infrared sensitivity is silver or gold, and the preferred matrix is silicon of CuInSe 2 .
Inventors
- 👤 Clayton W. Bates, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:15
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H01; H01J; H01J1/00; H01J1/54; H01J1/78; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
118 words
A photosensitive material of enhanced sensitivity to incident radiation of a selected wavelength, comprising: a semiconductor matrix transmissive to radiation of the selected wavelength, said matrix being selected from the group consisting of silicon and CuInSe 2 ; and an array of particles of an electrically conducting material embedded in and dispersed through said matrix, said particles being selected from the group consisting of silver and gold, said particles having sizes of from about 1 to about 100 nanometers and having a volume fraction of at least about 10 percent of said material, there being no reactive phase present between said particles and said matrix that would interfere with the interaction of the incident radiation and the material.
Claim 2
Dependent Claim
118 words
A photosensitive material of enhanced sensitivity to incident radiation of a selected wavelength, comprising: a semiconductor matrix transmissive to radiation of the selected wavelength, said matrix being selected from the group consisting of silicon and CuInSe 2 ; and an array of particles of an electrically conducting material embedded in and dispersed through said matrix, said particles being selected from the group consisting of silver and gold, said particles having sizes of from about 1 to about 100 nanometers and having a volume fraction of at least about 10 percent of said material, there being no reactive phase present between said particles and said matrix that would interfere with the interaction of the incident radiation and the material.
Claim 3
Dependent Claim
18 words
The material of claim 1, wherein said particles have sizes of from about 2.5 to about 20 nanometers.
Claim 4
Dependent Claim
21 words
The material of claim 1, wherein the volume fraction of said particles is from about 20 percent to about 80 percent.
Claim 5
Dependent Claim
15 words
The material of claim 1, wherein the matrix is doped to modify its electrical properties.
Claim 6
Dependent Claim
104 words
A photosensitive material of enhanced sensitivity to infrared radiation having a wavelength of greater than about 800 nanometers, comprising: a semiconducting matrix transmissive to infrared radiation and having a dielectric constant of at least about 10; an array of particles of an electrically conducting material embedded in and dispersed through said matrix, said particles having sizes of from about 1 to about 100 nanometers and having a volume fraction of at least about 10 percent of the material, there being no reactive phase present between said particles and said matrix, whereby said material absorbs infrared radiation having wavelengths of greater than about 800 nanometers.
Claim 7
Dependent Claim
104 words
A photosensitive material of enhanced sensitivity to infrared radiation having a wavelength of greater than about 800 nanometers, comprising: a semiconducting matrix transmissive to infrared radiation and having a dielectric constant of at least about 10; an array of particles of an electrically conducting material embedded in and dispersed through said matrix, said particles having sizes of from about 1 to about 100 nanometers and having a volume fraction of at least about 10 percent of the material, there being no reactive phase present between said particles and said matrix, whereby said material absorbs infrared radiation having wavelengths of greater than about 800 nanometers.
Claim 8
Dependent Claim
18 words
The material of claim 5, wherein said particles are selected from the group consisting of silver and gold.
Claim 9
Dependent Claim
20 words
The material of claim 5, wherein said matrix is selected from the group consisting of silicon and CuInSe 2 .
Claim 10
Dependent Claim
18 words
The material of claim 5, wherein said particles have sizes of from about 2.5 to about 20 nanometers.
Claim 11
Dependent Claim
15 words
The material of claim 5, wherein said particles have a size of about 5 nanometers.
Claim 12
Dependent Claim
20 words
The material of claim 5, wherein the volume fraction of said particles is from about 20 to about 80 pecent.
Claim 13
Dependent Claim
14 words
The material of claim 5, wherein a portion of said particles are clustered together.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-27 | 1992-09-26 | 1993-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-27 | 1996-09-26 | 1997-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-27 | 2000-09-26 | 2001-03-28 | $7700.00 | Window Closed / Lapsed |