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US5162262A
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Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
Assignee: Mitsubishi Electric Corp
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Filing: 1991-07-08
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Granted: 1992-11-10
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Expires: 2011-07-08
Abstract
Abstract An interconnection layer of a semiconductor device according to the present invention has in a contact portion with a conductor layer a multi-layered structure formed from the bottom, of a refractory metal silicide layer, a first refractory metal nitride layer, and a secondary refractory metal nitride layer. Titanium or tungsten is used as a refractory metal. The second refractory metal nitride is formed by thermally nitriding the refractory metal layer. The second refractory metal nitride layer formed by the thermal process has a close packed crystal structure and has an excellent barrier characteristic.
Inventors
- 👤 Natsuo Ajika
- 👤 Hideaki Arima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/60; H10D64/62; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6316; H10W20/033; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
127 words
A method of manufacturing an interconnection layer for a semiconductor device, comprising the sequential steps of: forming a first layer of a first refractory metal on an impurity region of a silicon substrate; forming a second layer of a nitride of said first refractory metal on a surface of said first layer; forming a third layer of said first refractory metal on a surface of said second layer; forming a refractory metal silicide layer by silicidation of said first layer and forming a refractory metal nitride layer by nitriding said third layer, by a thermal treatment in a nitriding atmosphere; and forming a conductive layer on a surface of said refractory nitride metal layer which was formed by nitriding said third layer of said first refractory metal.
Claim 2
Independent Claim
127 words
A method of manufacturing an interconnection layer for a semiconductor device, comprising the sequential steps of: forming a first layer of a first refractory metal on an impurity region of a silicon substrate; forming a second layer of a nitride of said first refractory metal on a surface of said first layer; forming a third layer of said first refractory metal on a surface of said second layer; forming a refractory metal silicide layer by silicidation of said first layer and forming a refractory metal nitride layer by nitriding said third layer, by a thermal treatment in a nitriding atmosphere; and forming a conductive layer on a surface of said refractory nitride metal layer which was formed by nitriding said third layer of said first refractory metal.
Claim 3
Dependent Claim
33 words
A method of manufacturing an interconnection layer in accordance with claim 1, wherein said steps of forming said first layer of said first refractory metal is preformed using a chemical vapor deposition process.
Claim 4
Dependent Claim
31 words
A method of manufacturing an interconnection layer in accordance with claim 1, wherein said steps of forming said first layer of said first refractory metal is preformed using a sputtering process.
Claim 5
Dependent Claim
31 words
A method of manufacturing an interconnection layer in accordance with claim 1, wherein said first layer, said second layer, and said third layer are sequentially formed by a common sputtering apparatus.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1995-11-10 | 1996-05-11 | 1996-11-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-11-10 | 2000-05-11 | 2000-11-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-11-10 | 2004-05-11 | 2004-11-10 | $7700.00 | Window Closed / Lapsed |