High-frequency thick-film semiconductor circuit

Claim 1

A high-frequency thick-film hybrid semiconductor circuit comprising: an insulating substrate having a first surface; a conductive input film disposed on the first surface of said insulating substrate; a conductive output film disposed on the first surface of said insulating substrate; at least two conductive grounding films disposed on the first surface of said insulating substrate with said conductive output film disposed therebetween; a first conductive grounding bridge including two legs, each leg being disposed on one of said at least two conductive grounding films, and a bridging portion joining the legs and spaced from the first surface; a capacitive element mounted on the bridging portion of said first grounding bridge and including a first bonding pad; a second conductive grounding bridge including two bases, each base being disposed on one of said at least two conductive grounding films, a bridging portion joining the bases and spaced from the first surface, and a second bonding pad on said bridging portion; a heat-radiating plate mounted on said conductive output film, said heat-radiating plate having a first end portion disposed between said conductive output film and said bridging portion of said first grounding bridge, a second end portion disposed between said conductive output film and said bridging portion of said second grounding bridge and a protrusion protruding away from said substrate and including a top surface disposed between said first and second grounding bridges; and a semiconductor element mounted on said heat-radiating plate on said top surface between said first and second grounding bridges and having a third bonding pad wherein said first, second, and third bonding pads are substantially coplanar.