US5157629A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Selective application of voltages for testing storage cells in semiconductor memory arrangements
Assignee: Hitachi Ltd
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Filing: 1989-04-10
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Granted: 1992-10-20
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Expires: 2009-04-10
Abstract
Abstract A dynamic RAM is provided with a plurality of 1-MOSFET memory cells, each having a storage capacitor and a switching MOSFET coupled to one electrode of the storage capacitor. The other electrode of each of the storage capacitors is coupled to a switching circuit which controls the voltage which is applied to the capacitor. The switching circuit is, in turn, coupled to both a voltage generating circuit (which preferably provides a voltage of 1/2 Vcc) and a voltage supply circuit which is set to provide predetermined test voltages. Thus, by operating the switching circuit, a voltage of 1/2 Vcc can be applied to the memory cell capacitors during normal operation of the dynamic RAM, and the predetermined test voltages can be applied to the memory cell capacitors during a testing operation.
Inventors
- 👤 Katsuyuki Sato
- 👤 Hiroshi Kawamoto
- 👤 Kazumasa Yanagisawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:34
CPC Classifications
G; G11; G11C; G11C29/00; G11C29/04; G11C29/50; G11C29/50016; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/4074; G11C2029/5004
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
290 words
A semiconductor memory comprising: a memory cell including a data storage capacitor, having a pair of electrodes, and a MISFET coupled in series with said capacitor; and a voltage generating circuit, powered by a power source voltage, for providing a voltage of about a half of said power source voltage to one of said pair of electrodes, the other of said pair of electrodes being coupled to said MISFET; wherein said voltage generating circuit comprises a voltage dividing circuit which has a first resistor means having one end coupled to said power source voltage, a second resistor means having one end coupled to a predetermined voltage, a first node, a first MISFET of a first channel conductivity type, configured to operate as a diode, coupled between a second end of said first resistor means and said first node, and a second MISFET of a second channel conductivity type, configured to operate as a diode, coupled between a second end of said second resistor means and said first node, a first output MISFET of said first channel conductivity type having a gate coupled to the common connection of said first MISFET and said first resistor means, and a second output MISFET of said second channel conductivity type having a gate coupled to the common connection of said second MISFET and said second resistor means and having its source connected to the source of said first output MISFET, and wherein said first and second MISFETs have threshold voltage levels of absolute value smaller than that of the corresponding first and second output MISFETs, respectively, and wherein an output voltage of about a half of said power source voltage is obtained from said common source connection of said first and second output MISFETs.
Claim 2
Dependent Claim
290 words
A semiconductor memory comprising: a memory cell including a data storage capacitor, having a pair of electrodes, and a MISFET coupled in series with said capacitor; and a voltage generating circuit, powered by a power source voltage, for providing a voltage of about a half of said power source voltage to one of said pair of electrodes, the other of said pair of electrodes being coupled to said MISFET; wherein said voltage generating circuit comprises a voltage dividing circuit which has a first resistor means having one end coupled to said power source voltage, a second resistor means having one end coupled to a predetermined voltage, a first node, a first MISFET of a first channel conductivity type, configured to operate as a diode, coupled between a second end of said first resistor means and said first node, and a second MISFET of a second channel conductivity type, configured to operate as a diode, coupled between a second end of said second resistor means and said first node, a first output MISFET of said first channel conductivity type having a gate coupled to the common connection of said first MISFET and said first resistor means, and a second output MISFET of said second channel conductivity type having a gate coupled to the common connection of said second MISFET and said second resistor means and having its source connected to the source of said first output MISFET, and wherein said first and second MISFETs have threshold voltage levels of absolute value smaller than that of the corresponding first and second output MISFETs, respectively, and wherein an output voltage of about a half of said power source voltage is obtained from said common source connection of said first and second output MISFETs.
Claim 3
Dependent Claim
57 words
A semiconductor memory according to claim 1, wherein said first and second resistor means comprise a third MISFET of said second channel conductivity type and a fourth MISFET of said first channel conductivity type, respectively, and wherein the gate of said third MISFET is coupled to the gate of said fourth MISFET and to said first node.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-10-20 | 1996-04-20 | 1996-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-10-20 | 2000-04-20 | 2000-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-10-20 | 2004-04-20 | 2004-10-20 | $7700.00 | Window Closed / Lapsed |